HiPerFETTM
Power MOSFETs
VDSS
ID25
RDS(on)
IXFK33N50
IXFX35N50
33A 160m
35A 150m
500V
N-Channel Enhancement Mode
Avalanche Rated
High dv/dt, Low trr
TO-264 (IXFK)
G
D
S
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
500
500
V
V
Tab
VGSS
VGSM
Continuous
Transient
20
30
V
V
PLUS247 (IXFX)
ID25
IDM
TC = 25C
33N50
35N50
33
35
132
140
A
A
A
A
TC = 25C, Pulse Width Limited by TJM
33N50
35N50
G
D
S
Tab
IA
EAS
TC = 25C
TC = 25C
33
2.5
A
J
G = Gate
D
= Drain
dv/dt
PD
IS IDM, VDD VDSS, TJ 150C
TC = 25C
5
V/ns
W
S = Source
Tab = Drain
416
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
C
C
C
Features
International Standard Packages
Avalanche Rated
Low Intrinsic Gate Resistance
Low Package Inductance
Fast Intrinsic Rectifier
Molding epoxies meet UL 94 V-0
flammability classification
Low RDS (on) HDMOSTM process
TL
TSOLD
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
300
260
°C
°C
Md
FC
Mounting Torque (TO-264)
Mounting Force (PLUS247)
1.13/10
Nm/lb.in
N/lb
20..120 /4.5..27
Weight
TO-264
PLUS247
10
6
g
g
Advantages
High Power Density
Easy to Mount
Space Savings
Symbol
Test Conditions
Characteristic Values
(TJ = 25C Unless Otherwise Specified)
Min.
Typ.
0.102
-0.206
Max.
BVDSS
VGS = 0V, ID = 1mA
500
V
Applications
VDSS Temperature Coefficient
%/K
VGS(th)
VDS = VGS, ID = 4mA
2.0
4.5
V
DC-DC Converters
Battery Chargers
Synchronous rectification
Switch-Mode and Resonant-Mode
VGS(th) Temperature Coefficient
%/K
IGSS
IDSS
VGS = 20V, VDS = 0V
200 nA
200 A
Power Supplies
DC Choppers
Temperature and Lighting Controls
VDS = 0.8 • VDSS, VGS = 0V
TJ = 125C
2
mA
RDS(on)
VGS = 10V, ID = 0.5 • IDSS, Note 1
33N50
35N50
160 m
150 m
DS97517E(9/13)
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