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BZX84C36ET3

型号：

BZX84C36ET3

品牌：

ONSEMI[ ONSEMI ]

页数：

6 页

PDF大小：

168 K

下载PDF手册
BZX84CxxxET1G Series,  
SZBZX84CxxxET1G Series  
Zener Voltage Regulators  
250 mW SOT−23 Surface Mount  
This series of Zener diodes is offered in the convenient, surface  
mount plastic SOT−23 package. These devices are designed to provide  
voltage regulation with minimum space requirement. They are well  
suited for applications such as cellular phones, hand held portables,  
and high density PC boards.  
www.onsemi.com  
Specification Features  
• 250 mW Rating on FR−4 or FR−5 Board  
• Zener Breakdown Voltage Range − 2.4 V to 75 V  
• Package Designed for Optimal Automated Board Assembly  
• Small Package Size for High Density Applications  
• ESD Rating of Class 3 (> 16 kV) per Human Body Model  
• Peak Power − 225 W (8 X 20 ms)  
SOT−23  
CASE 318  
STYLE 8  
3
1
Cathode  
Anode  
• SZ Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AEC−Q101 Qualified and  
PPAP Capable  
MARKING DIAGRAM  
• These Devices are Pb−Free and are RoHS Compliant  
xxx M G  
Mechanical Characteristics  
G
CASE: Void-free, transfer-molded, thermosetting plastic case  
FINISH: Corrosion resistant finish, easily solderable  
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:  
260°C for 10 Seconds  
POLARITY: Cathode indicated by polarity band  
FLAMMABILITY RATING: UL 94 V−0  
1
xxx  
M
G
= Device Code  
= Date Code*  
= Pb−Free Package  
(Note: Microdot may be in either location)  
*Date Code orientation may vary depending up-  
on manufacturing location.  
MAXIMUM RATINGS  
Rating  
Symbol  
Max  
Unit  
Peak Power Dissipation @ 20 ms (Note 1)  
P
pk  
225  
W
ORDERING INFORMATION  
@ T ≤ 25°C  
L
†
Device  
Package  
Shipping  
Total Power Dissipation on FR−5 Board,  
P
D
(Note 2) @ T = 25°C  
250  
2.0  
500  
mW  
mW/°C  
°C/W  
A
BZX84CxxxET1G  
SOT−23  
(Pb−Free)  
3,000 /  
Derated above 25°C  
Tape & Reel  
Thermal Resistance, Junction−to−Ambient  
R
q
JA  
SZBZX84CxxxET1G SOT−23  
(Pb−Free)  
3,000 /  
Tape & Reel  
Total Power Dissipation on Alumina  
P
D
Substrate, (Note 3) @ T = 25°C  
300  
2.4  
417  
mW  
mW/°C  
°C/W  
A
Derated above 25°C  
BZX84CxxxET3G  
SOT−23  
10,000 /  
Tape & Reel  
Thermal Resistance, Junction−to−Ambient  
R
q
JA  
(Pb−Free)  
Junction and Storage Temperature Range  
T , T  
−65 to  
+150  
°C  
J
stg  
SZBZX84CxxxET3G SOT−23  
(Pb−Free)  
10,000 /  
Tape & Reel  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. Nonrepetitive current pulse per Figure 9.  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
2. FR−5 = 1.0 X 0.75 X 0.62 in.  
3. Alumina = 0.4 X 0.3 X 0.024 in, 99.5% alumina.  
DEVICE MARKING INFORMATION  
See specific marking information in the device marking  
column of the Electrical Characteristics table on page 3 of  
this data sheet.  
© Semiconductor Components Industries, LLC, 2003  
1
Publication Order Number:  
October, 2016 − Rev. 10  
BZX84C2V4ET1/D  
 
BZX84CxxxET1G Series, SZBZX84CxxxET1G Series  
ELECTRICAL CHARACTERISTICS  
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T = 25°C  
A
I
unless otherwise noted, V = 0.90 V Max. @ I = 10 mA)  
F
F
I
F
Symbol  
Parameter  
V
Reverse Zener Voltage @ I  
Reverse Current  
Z
ZT  
I
ZT  
Z
Maximum Zener Impedance @ I  
ZT  
V
Z
V
R
ZT  
V
I
V
F
R
ZT  
I
Reverse Leakage Current @ V  
Reverse Voltage  
R
R
I
V
R
I
F
Forward Current  
V
F
Forward Voltage @ I  
F
QV  
Maximum Temperature Coefficient of V  
Z
Z
C
Max. Capacitance @ V = 0 and f = 1 MHz  
R
Zener Voltage Regulator  
www.onsemi.com  
2
BZX84CxxxET1G Series, SZBZX84CxxxET1G Series  
ELECTRICAL CHARACTERISTICS  
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T = 25°C unless otherwise noted, V = 0.90 V Max. @ I = 10 mA)  
A
F
F
V
Z2  
(V)  
Max  
V
(V)  
= 5 mA  
@ I  
= 1  
mA  
V
(V)  
Reverse  
Leakage  
Current  
q
VZ  
(mV/k)  
Z1  
ZT2  
Z3  
Z
(W)  
@ I  
Z
(W)  
@ I  
Z
ZT3  
(W)  
@
C (pF)  
@
ZT1  
ZT2  
@ I  
@ I =20 mA  
ZT1  
(Note 4)  
ZT3  
(Note 4)  
(Note 4)  
@ I =5 mA  
ZT1  
V = 0  
ZT1  
=
ZT2  
=
R
I
V
(V)  
Device  
I
=
f =  
R
mA  
R
ZT3  
@
Min Nom Max  
Min Max  
Min  
Max  
Min Max  
Device*  
Marking  
1 MHz  
450  
450  
450  
450  
450  
450  
450  
260  
225  
200  
185  
155  
140  
135  
130  
130  
130  
130  
120  
110  
105  
100  
85  
5 mA  
1 mA  
20 mA  
50  
50  
50  
40  
40  
30  
30  
15  
15  
10  
6
BZX84C2V4ET1G  
BZX84C2V7ET1G  
BZX84C3V0ET1G  
BZX84C3V3ET1G  
BZX84C3V6ET1G  
BZX84C3V9ET1G  
BZX84C4V3ET1G  
BZX84C4V7ET1G  
BZX84C5V1ET1G  
BZX84C5V6ET1G  
BZX84C6V2ET1G  
BZX84C6V8ET1G  
BZX84C7V5ET1G  
BZX84C8V2ET1G  
BZX84C9V1ET1G  
BZX84C10ET1G  
BZX84C11ET1G  
BZX84C12ET1G  
BZX84C13ET1G  
BZX84C15ET1G  
BZX84C16ET1G  
BZX84C18ET1G  
BZX84C20ET1G  
BZX84C22ET1G  
BZX84C24ET1G  
BA1  
BA2  
BA3  
BA4  
BA5  
BA6  
BA7  
BA9  
BB1  
BB2  
BB3  
BB4  
BB5  
BB6  
BB7  
BB8  
BB9  
BC1  
BC2  
BC3  
BC4  
BC5  
BC6  
BC7  
BC8  
2.2  
2.5  
2.4  
2.7  
3.0  
3.3  
3.6  
3.9  
4.3  
4.7  
5.1  
5.6  
6.2  
6.8  
7.5  
8.2  
9.1  
10  
2.6  
2.9  
100  
100  
95  
95  
90  
90  
90  
80  
60  
40  
10  
15  
15  
15  
15  
20  
20  
25  
30  
30  
40  
45  
55  
55  
70  
1.7  
1.9  
2.1  
2.3  
2.7  
2.9  
3.3  
3.7  
4.2  
4.8  
5.6  
6.3  
6.9  
7.6  
8.4  
2.1  
2.4  
2.7  
2.9  
3.3  
3.5  
4.0  
4.7  
5.3  
6.0  
6.6  
7.2  
7.9  
8.7  
9.6  
600  
600  
600  
600  
600  
600  
600  
500  
480  
400  
150  
80  
2.6  
3.0  
3.2  
3.6  
50  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
1.0  
2.0  
2.0  
2.0  
4.0  
4.0  
5.0  
5.0  
6.0  
7.0  
8.0  
8.0  
8.0  
−3.5  
−3.5  
−3.5  
−3.5  
−3.5  
0
0
0
0
0
20  
10  
2.8  
3.2  
3.3  
3.9  
3.1  
3.5  
3.6  
4.2  
5.0  
5.0  
3.0  
3.0  
3.0  
2.0  
1.0  
3.0  
2.0  
1.0  
0.7  
0.5  
0.2  
0.1  
0.1  
0.1  
3.4  
3.8  
3.9  
4.5  
3.7  
4.1  
4.1  
4.7  
−3.5 −2.5  
−3.5  
4.0  
4.6  
4.4  
5.1  
0
4.4  
5.0  
4.5  
5.4  
−3.5 0.2  
−2.7 1.2  
4.8  
5.4  
5.0  
5.9  
5.2  
6.0  
5.2  
6.3  
−2  
0.4  
1.2  
2.5  
3.2  
3.8  
4.5  
5.4  
6.0  
7.0  
9.2  
2.5  
3.7  
4.5  
5.3  
6.2  
7.0  
8.0  
9.0  
10  
5.8  
6.6  
5.8  
6.8  
6.4  
7.2  
6.4  
7.4  
6
7.0  
7.9  
80  
7.0  
8.0  
6
7.7  
8.7  
80  
7.7  
8.8  
6
8.5  
9.6  
100  
150  
150  
150  
170  
200  
200  
225  
225  
250  
250  
8.5  
9.7  
8
9.4  
10.6  
11.6  
12.7  
14.1  
15.6  
17.1  
19.1  
21.2  
23.3  
25.6  
9.3 10.6  
10.2 11.6  
11.2 12.7  
9.4  
10.7  
11.8  
12.9  
14.2  
15.7  
17.2  
19.2  
21.4  
23.4  
25.7  
10  
10  
10  
15  
20  
20  
20  
20  
25  
25  
10.4  
11.4  
12.4  
13.8  
15.3  
16.8  
18.8  
20.8  
22.8  
11  
10.4  
11.4  
12.5  
13.9  
15.4  
16.9  
18.9  
20.9  
22.9  
12  
13  
12.3  
14  
11  
15  
13.7 15.5  
0.05 10.5  
13  
16  
15.2  
16.7  
17  
19  
0.05 11.2 10.4  
0.05 12.6 12.4  
14  
18  
16  
20  
18.7 21.1  
20.7 23.2  
22.7 25.5  
0.05  
14  
14.4  
18  
22  
0.05 15.4 16.4  
0.05 16.8 18.4  
20  
85  
24  
22  
80  
q
VZ  
Max  
(mV/k)  
Below  
V
@ I  
Below  
Reverse  
Leakage  
Current  
Z2  
Z
Z
Z
ZT3  
Below  
@ I  
ZT3  
C (pF)  
ZT1  
ZT2  
V
Z1  
Below  
=
V
Below  
= 10 mA  
@ I  
= 2  
ZT2  
Z3  
ZT1  
Below  
@ I  
Below  
@ I  
@ V  
R
@ I  
= 2 mA  
0.1 mA  
@ I  
mA  
ZT1  
ZT3  
= 0  
f =  
1 MHz  
ZT1  
=
ZT4  
=
I
V
(V)  
Device  
Marking  
=
R
R
@
Min Nom Max  
Min Max  
Min  
Max  
Min Max  
mA  
Device*  
BZX84C27ET1G  
BZX84C30ET1G  
BZX84C33ET1G  
BZX84C36ET1G  
BZX84C39ET1G  
BZX84C43ET1G  
BZX84C47ET1G  
BZX84C51ET1G  
BZX84C56ET1G  
BZX84C62ET1G  
BZX84C68ET1G  
BZX84C75ET1G  
2 mA  
0.5 mA  
300  
300  
325  
350  
350  
375  
375  
400  
425  
450  
475  
500  
10 mA  
BC9  
BD1  
BD2  
BD3  
BD4  
BK6  
BD5  
BD6  
BD7  
BD8  
BD9  
BE1  
25.1  
28  
31  
34  
37  
40  
44  
48  
52  
58  
64  
70  
27  
30  
33  
36  
39  
43  
47  
51  
56  
62  
68  
75  
28.9  
32  
35  
38  
41  
46  
50  
54  
60  
66  
72  
79  
80  
25  
28.9  
32  
35  
38  
41  
46  
50  
54  
60  
66  
72  
79  
25.2  
28.1  
31.1  
34.1  
37.1  
40.1  
44.1  
48.1  
52.1  
58.2  
64.2  
70.3  
29.3  
32.4  
35.4  
38.4  
41.5  
46.5  
50.5  
54.6  
60.8  
67  
45  
0.05 18.9 21.4 25.3  
0.05 21 24.4 29.4  
70  
70  
70  
70  
45  
40  
40  
40  
40  
35  
35  
35  
80  
27.8  
30.8  
33.8  
36.7  
39.7  
43.7  
47.6  
51.5  
57.4  
63.4  
69.4  
50  
80  
55  
0.05 23.1 27.4 33.4  
0.05 25.2 30.4 37.4  
0.05 27.3 33.4 41.2  
0.05 30.1 37.6 46.6  
90  
60  
130  
150  
170  
180  
200  
215  
240  
255  
70  
80  
90  
0.05 32.9  
42  
51.8  
100  
110  
120  
130  
140  
0.05 35.7 46.6 57.2  
0.05 39.2 52.2 63.8  
0.05 43.4 58.8 71.6  
0.05 47.6 65.6 79.8  
0.05 52.5 73.4 88.6  
73.2  
80.2  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
4. Zener voltage is measured with a pulse test current I at an ambient temperature of 25°C  
Z
* Include SZ-prefix devices where applicable.  
www.onsemi.com  
3
 
BZX84CxxxET1G Series, SZBZX84CxxxET1G Series  
TYPICAL CHARACTERISTICS  
8
7
6
5
4
3
100  
TYPICAL T VALUES  
TYPICAL T VALUES  
C
C
V @ I  
Z
ZT  
V @ I  
Z
ZT  
10  
2
1
0
−1  
−2  
−3  
1
2
3
4
5
6
7
8
9
10  
11  
12  
10  
100  
V , NOMINAL ZENER VOLTAGE (V)  
Z
V , NOMINAL ZENER VOLTAGE (V)  
Z
Figure 1. Temperature Coefficients  
Figure 2. Temperature Coefficients  
(Temperature Range −55°C to +150°C)  
(Temperature Range −55°C to +150°C)  
1000  
100  
10  
1000  
100  
10  
T = 255C  
75 V (MMBZ5267BLT1)  
91 V (MMBZ5270BLT1)  
J
I = 1 mA  
I
= 0.1 I  
Z
Z(AC)  
Z(DC)  
f = 1 kHz  
5 mA  
20 mA  
75°C 25°C  
0.6 0.7  
0°C  
150°C  
1
1
1
10  
V , NOMINAL ZENER VOLTAGE  
100  
0.4  
0.5  
0.8  
0.9  
1.0  
1.1  
1.2  
V , FORWARD VOLTAGE (V)  
F
Z
Figure 3. Effect of Zener Voltage on  
Zener Impedance  
Figure 4. Typical Forward Voltage  
www.onsemi.com  
4
BZX84CxxxET1G Series, SZBZX84CxxxET1G Series  
TYPICAL CHARACTERISTICS  
1000  
100  
1000  
T = 25°C  
A
0 V BIAS  
1 V BIAS  
100  
10  
1
+150°C  
BIAS AT  
50% OF V NOM  
0.1  
0.01  
Z
10  
1
+25°C  
−55°C  
0.001  
0.0001  
0.00001  
1
10  
100  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
V , NOMINAL ZENER VOLTAGE (V)  
Z
V , NOMINAL ZENER VOLTAGE (V)  
Z
Figure 5. Typical Capacitance  
Figure 6. Typical Leakage Current  
100  
10  
100  
10  
T = 25°C  
A
T = 25°C  
A
1
1
0.1  
0.01  
0.1  
0.01  
10  
30  
50  
70  
90  
0
2
4
6
8
10  
12  
V , ZENER VOLTAGE (V)  
Z
V , ZENER VOLTAGE (V)  
Z
Figure 8. Zener Voltage versus Zener Current  
(12 V to 91 V)  
Figure 7. Zener Voltage versus Zener Current  
(VZ Up to 12 V)  
100  
PEAK VALUE I  
@ 8 ms  
RSM  
t
r
90  
80  
70  
60  
50  
40  
30  
20  
PULSE WIDTH (t ) IS DEFINED  
P
AS THAT POINT WHERE THE  
PEAK CURRENT DECAY = 8 ms  
HALF VALUE I  
/2 @ 20 ms  
RSM  
t
P
10  
0
0
20  
40  
60  
80  
t, TIME (ms)  
Figure 9. 8 × 20 ms Pulse Waveform  
www.onsemi.com  
5
BZX84CxxxET1G Series, SZBZX84CxxxET1G Series  
PACKAGE DIMENSIONS  
SOT−23 (TO−236)  
CASE 318−08  
ISSUE AR  
NOTES:  
D
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.  
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF  
THE BASE MATERIAL.  
0.25  
3
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,  
PROTRUSIONS, OR GATE BURRS.  
T
H
E
E
1
2
MILLIMETERS  
INCHES  
NOM  
0.039  
0.002  
0.017  
0.006  
0.114  
0.051  
0.075  
0.017  
0.021  
0.094  
−−−  
DIM  
A
A1  
b
c
D
E
e
L
MIN  
0.89  
0.01  
0.37  
0.08  
2.80  
1.20  
1.78  
0.30  
0.35  
2.10  
0_  
NOM  
1.00  
0.06  
0.44  
0.14  
2.90  
1.30  
1.90  
0.43  
0.54  
2.40  
−−−  
MAX  
MIN  
MAX  
0.044  
0.004  
0.020  
0.008  
0.120  
0.055  
0.080  
0.022  
0.027  
0.104  
10 _  
L
1.11  
0.10  
0.50  
0.20  
3.04  
1.40  
2.04  
0.55  
0.69  
2.64  
10 _  
0.035  
0.000  
0.015  
0.003  
0.110  
0.047  
0.070  
0.012  
0.014  
0.083  
0 _  
3X  
b
L1  
VIEW C  
e
TOP VIEW  
L1  
A
H
E
T
c
A1  
SEE VIEW C  
SIDE VIEW  
STYLE 8:  
PIN 1. ANODE  
END VIEW  
2. NO CONNECTION  
3. CATHODE  
RECOMMENDED  
SOLDERING FOOTPRINT*  
3X  
0.90  
2.90  
3X  
0.95  
PITCH  
0.80  
DIMENSIONS: MILLIMETERS  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent  
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  
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expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This  
literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
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ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
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Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada  
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
◊
BZX84C2V4ET1/D  
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