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UZVN0540A

型号:

UZVN0540A

品牌:

DIODES[ DIODES INCORPORATED ]

页数:

1 页

PDF大小:

26 K

N-CHANNEL ENHANCEMENT  
MODE VERTICAL DMOS FET  
ISSUE 2 – MARCH 94  
ZVN0540A  
FEATURES  
*
*
400 Volt VDS  
RDS(on)=50  
D
G
S
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VDS  
VALUE  
UNIT  
V
Drain-Source Voltage  
400  
90  
Continuous Drain Current at Tamb=25°C  
Pulsed Drain Current  
ID  
mA  
mA  
V
IDM  
600  
Gate-Source Voltage  
VGS  
± 20  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
Ptot  
700  
mW  
°C  
Tj:Tstg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL MIN. MAX. UNIT CONDITIONS.  
Drain-Source Breakdown  
Voltage  
BVDSS  
400  
V
ID=1mA, VGS=0V  
ID=1mA, VDS= VGS  
VGS=± 20V, VDS=0V  
Gate-Source Threshold  
Voltage  
VGS(th)  
1
3
V
Gate-Body Leakage  
IGSS  
IDSS  
20  
nA  
Zero Gate Voltage Drain  
Current  
10  
400  
VDS=400 V, VGS=0  
VDS=320 V, VGS=0V,  
T=125°C(2)  
µA  
µA  
On-State Drain Current(1)  
ID(on)  
150  
100  
mA VDS=25 V, VGS=10V  
Static Drain-Source On-State RDS(on)  
Resistance (1)  
50  
VGS=10V,ID=100mA  
Forward Transconductance(1)(2gfs  
)
mS  
VDS=25V,ID=100mA  
Input Capacitance (2)  
Ciss  
70  
10  
pF  
pF  
Common Source Output  
Capacitance (2)  
Coss  
VDS=25 V, VGS=0V, f=1MHz  
Reverse Transfer Capacitance Crss  
(2)  
4
pF  
Turn-On Delay Time (2)(3)  
Rise Time (2)(3)  
td(on)  
tr  
td(off)  
tf  
7
ns  
ns  
ns  
ns  
7
VDD25V, ID=100mA  
Turn-Off Delay Time (2)(3)  
Fall Time (2)(3)  
16  
10  
3-356  
(
1
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