IXFC 40N30Q
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
ISOPLUS220 Outline
VDS = 10 V; ID = IT Notes 1, 2
22
30
S
Ciss
Coss
Crss
3100
650
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
150
td(on)
tr
td(off)
tf
20
35
40
12
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS
,
ID = 0.5 • ID25, RG = 2.5 Ω (External)
Qg(on)
Qgs
95
25
54
nC
nC
nC
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
Notes 2
Qgd
RthJC
RthCK
0.54 K/W
K/W
0.25
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
TestConditions
IS
VGS = 0 V
40
160
1.5
A
A
V
ISM
VSD
Repetitive; pulse width limited by TJM
IF = I , VGS = 0 V,
NoteS1
trr
250
ns
I = 25A
-Fdi/dt = 100 A/µs,
VR = 50 V
QRM
0.85
8
µC
IRM
A
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
2. IT = 30A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecovered byoneormore
ofthefollowingU.S.patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
