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IXSH30N60BD1

型号：

IXSH30N60BD1

描述：

高速IGBT与二极管[ High Speed IGBT with Diode ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

121 K

下载PDF手册
High Speed IGBT with Diode  
IXSH 30N60BD1  
IXSK 30N60BD1  
IXST 30N60BD1  
VCES  
IC25  
= 600 V  
= 55 A  
VCE(sat) = 2.0 V  
tfi  
Short Circuit SOA Capability  
= 140 ns  
TO-247AD  
(IXSH)  
Symbol  
TestConditions  
MaximumRatings  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C; RGE = 1 MW  
G
C
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
E
TO-268 (D3)  
(IXST)  
IC25  
IC90  
ICM  
TC = 25°C  
55  
30  
A
A
A
TC = 90°C  
TC = 25°C, 1 ms  
110  
G
E
SSOA  
(RBSOA)  
VGE= 15 V, TJ = 125°C, RG = 10 W  
Clamped inductive load, VCL = 0.8 VCES  
ICM = 60  
A
ms  
W
TO-264  
(IXSK)  
tSC  
(SCSOA)  
VGE= 15 V, VCE = 360 V, TJ = 125°C  
RG = 33 W, non repetitive  
10  
PC  
TC = 25°C  
200  
G
C
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
E
TJM  
Tstg  
G = Gate  
E = Emitter  
C = Collector  
TAB = Collector  
-55 ... +150  
Md  
Mountingtorque  
1.13/10 Nm/lb.in.  
Features  
• Internationalstandardpackages:  
JEDEC TO-247, TO-264& TO-268  
• Short Circuit SOA capability  
Maximumleadtemperatureforsoldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Weight  
TO-247/TO-268  
TO-264  
6/4  
10  
g
g
• Medium freqeuncy IGBT and anti-  
parallel FRED in one package  
• New generation HDMOSTM process  
Applications  
• AC motor speed control  
• DC servo and robot drives  
• DC choppers  
• Uninterruptiblepowersupplies(UPS)  
• Switch-modeandresonant-mode  
powersupplies  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
BVCES  
VGE(th)  
IC = 750 mA, VGE = 0 V  
600  
4
V
V
Advantages  
• Space savings (two devices in one  
package)  
• Easy to mount with 1 screw  
(isolatedmountingscrewhole)  
• Surface mountable, high power case  
style  
• Reduces assembly time and cost  
• High power density  
IC = 2.5 mA, VCE = VGE  
7
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
200 mA  
mA  
3
IGES  
VCE = 0 V, VGE = ±20 V  
±100 nA  
VCE(sat)  
VGE = 15 V  
IC = IC90  
IC = IC25  
2.0  
2.7  
V
V
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
98517A(7/00)  
1 - 5  
IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1  
Symbol  
gfs  
TestConditions  
CharacteristicValues  
TO-247 AD (IXSH) Outline  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
IC = IC90; VCE = 10 V,  
10  
S
Pulse test, t £ 300 ms, duty cycle £ 2 %  
Cies  
Coes  
Cres  
3100  
240  
30  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
IC = IC90, VGE = 15 V, VCE = 0.5 VCES  
Dim. Millimeter  
Inches  
Qg  
Qge  
Qgc  
100  
30  
38  
nC  
nC  
nC  
Min. Max. Min. Max.  
A
B
19.81 20.32 0.780 0.800  
20.80 21.46 0.819 0.845  
td(on)  
tri  
td(off)  
tfi  
30  
30  
150  
140  
1.5  
ns  
ns  
270 ns  
270 ns  
2.5 mJ  
C
D
15.75 16.26 0.610 0.640  
3.55 3.65 0.140 0.144  
Inductive load, TJ = 25°C  
IC = IC90; VGE = 15 V  
E
F
4.32 5.49 0.170 0.216  
VCE = 0.8 VCES; RG = 4.7 W  
5.4  
6.2 0.212 0.244  
Note 1.  
Eoff  
G
H
1.65 2.13 0.065 0.084  
-
4.5  
-
0.177  
td(on)  
tri  
30  
35  
ns  
ns  
J
K
1.0  
1.4 0.040 0.055  
Inductive load, TJ = 125°C  
10.8 11.0 0.426 0.433  
Eon  
td(off)  
tfi  
0.5  
270  
250  
2.5  
mJ  
ns  
ns  
IC = IC90; VGE = 15 V  
L
M
4.7  
0.4  
5.3 0.185 0.209  
0.8 0.016 0.031  
VCE = 0.8 VCES; RG = 4.7 W  
N
1.5 2.49 0.087 0.102  
Eoff  
mJ  
Note 1  
TO-264 AA (IXSK) Outline  
RthJC  
RthCK  
RthCK  
0.62 K/W  
K/W  
TO-247  
TO-264  
0.25  
0.15  
K/W  
Reverse Diode (FRED)  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
Symbol  
VF  
TestConditions  
min. typ. max.  
IF = IC90, VGE = 0 V  
Note 2  
TJ = 150 °C  
TJ = 25 °C  
1.7  
2.5  
V
V
Dim.  
Millimeter  
Inches  
IRM  
IF = 50A; VGE = 0 V; TJ = 100 °C  
VR = 100 V; -diF/dt = 100 A/ms  
2
2.5  
A
Min.  
Max.  
Min.  
Max.  
A
A1  
A2  
b
b1  
b2  
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.202  
.114  
.083  
trr  
IF = 1 A; -di/dt = 100 A/ms; VR = 30 V TJ = 25°C  
35  
50 ns  
.09 K/W  
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.056  
.106  
.122  
RthJC  
c
D
E
e
0.53  
25.91 26.16  
19.81 19.96  
5.46 BSC  
0.83  
.021  
1.020  
.780  
.033  
1.030  
.786  
Notes: 1. Switching times may increase for VCE (Clamp) > 0.8 • VCES, higher TJ or increased RG.  
2. Pulse test, t £ 300 ms, duty cycle d £ 2 %  
.215 BSC  
J
K
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
TO-268AA (IXST) (D3 PAK)  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
L
L1  
20.32 20.83  
.800  
.090  
.820  
.102  
2.29  
2.59  
P
Q
Q1  
R
3.17  
6.07  
8.38  
3.81  
1.78  
3.66  
6.27  
8.69  
4.32  
2.29  
.125  
.239  
.330  
.150  
.070  
.144  
.247  
.342  
.170  
.090  
A
A1  
A2  
4.9  
2.7  
.02  
5.1  
2.9  
.25  
.193 .201  
.106 .114  
.001 .010  
b
b2  
C
1.15  
1.9  
.4  
1.45  
2.1  
.65  
.045 .057  
R1  
.75  
.83  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
.016 .026  
D
E
E1  
13.80 14.00  
15.85 16.05  
.543 .551  
.624 .632  
.524 .535  
Min. Recommended Footprint  
13.3  
5.45 BSC  
18.70 19.10  
13.6  
e
H
L
.215 BSC  
.736 .752  
.094 .106  
2.40  
2.70  
L1  
L2  
L3  
L4  
1.20  
1.00  
0.25 BSC  
1.40  
1.15  
.047 .055  
.039 .045  
.010 BSC  
3.80  
4.10  
.150 .161  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:  
© 2000 IXYS All rights reserved  
2 - 5  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715  
5,381,025  
IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1  
Fig.1 Saturation Characteristics  
Fig.2 Output Characterstics  
200  
100  
80  
60  
40  
20  
0
V
GE = 15V  
11V  
9V  
VGE = 15V  
TJ = 25°C  
13V  
TJ = 25°C  
13V  
160  
120  
80  
11V  
7V  
9V  
40  
7V  
5V  
0
0
2
4
6
8
10  
0
1
2
3
4
5
VCE - Volts  
Fig.4 Temperature Dependence  
VCE - Volts  
Fig.3 Collector-Emitter Voltage  
vs. Gate-Emitter Voltage  
of Output Saturation Voltage  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
120  
100  
80  
60  
40  
20  
0
VGS=15V  
TJ = 125°C  
IC = 60A  
VGE = 15V  
13V  
11V  
IC = 30A  
IC = 15A  
9V  
7V  
25  
50  
75  
TJ - Degrees C  
Fig.6 Temperature Dependence of  
100  
125  
150  
0
2
4
6
8
10  
VCE - Volts  
Fig.5 Input Admittance  
Breakdown and Threshold Voltage  
140  
120  
100  
80  
10000  
1000  
100  
V
CE = 10V  
f = 1Mhz  
C
iss  
60  
C
oss  
TJ = 125°C  
40  
C
rss  
20  
TJ = 25°C  
0
10  
4
6
8
10  
12  
14  
16  
0
5
10 15 20 25 30 35 40  
VCE-Volts  
VGE - Volts  
© 2000 IXYS All rights reserved  
3 - 5  
IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1  
Fig.7 Turn-Off Energy per Pulse and  
Fall Time on Collector Current  
Fig.8 Dependence of Turn-Off Energy  
Per Pulse and Fall Time on RG  
7.5  
5.0  
2.5  
0.0  
1.5  
1.0  
0.5  
0.0  
2.0  
1.5  
1.0  
0.5  
0.0  
8
6
4
2
0
E(OFF)  
TJ = 125°C  
TJ = 125°C  
RG = 10  
IC = 60A  
E(ON)  
E(ON)  
E(OFF)  
E(ON)  
IC = 30A  
IC = 15A  
E(OFF)  
E(ON)  
E(OFF)  
0
10  
20  
30  
40  
50  
0
20  
40  
60  
80  
RG - Ohms  
IC - Amperes  
Fig.9 Gate Charge Characteristic Curve  
Fig.10 Turn-Off Safe Operating Area  
15  
12  
9
100  
IC =30A  
V
CE = 300V  
TJ = 125°C  
RG = 4.7  
10  
1
dV/dt < 5V/ns  
6
3
0
0.1  
0
25  
50  
75  
100  
125  
0
100  
200  
300  
400  
500  
600  
Qg - nanocoulombs  
VCE - Volts  
Fig.11 Transient Thermal Resistance  
1
0.1  
D=0.5  
D=0.2  
D=0.1  
D=0.05  
D=0.02  
D=0.01  
D = Duty Cycle  
0.01  
Single pulse  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
Pulse Width - Seconds  
© 2000 IXYS All rights reserved  
4 - 5  
IXSH 30N60BD1 IXSK 30N60BD1 IXST 30N60BD1  
60  
A
1000  
nC  
30  
TVJ=100°C  
VR = 300V  
TVJ=100°C  
VR = 300V  
A
50  
40  
30  
20  
10  
0
25  
800  
IF= 60A  
IF= 30A  
IF= 15A  
IRM  
IF= 60A  
IF= 30A  
IF= 15A  
Qr  
IF  
20  
15  
10  
5
TVJ=150°C  
TVJ=100°C  
600  
400  
200  
0
TVJ=25°C  
0
A/ s  
-diF/dt  
0
1
2
3 V  
VF  
100  
1000  
0
200 400 600 1000  
A/ s  
-diF/dt  
Fig. 12 Forward current IF versus VF  
2.0  
Fig. 13 Reverse recovery charge Qr  
versus -diF/dt  
Fig. 14 Peak reverse current IRM  
versus -diF/dt  
90  
20  
1.00  
TVJ=100°C  
TVJ=100°C  
IF = 30A  
VR = 300V  
V
µs  
ns  
VFR  
VFR  
tfr  
trr  
1.5  
Kf  
15  
0.75  
0.50  
0.25  
0.
tfr  
80  
IF= 60A  
IF= 30A  
IF= 15A  
1.0  
10  
5
IRM  
70  
60  
0.5  
Qr  
0.0  
0
A/ s  
0
40  
80  
120  
160  
0
200 400 600 1000  
A/ s  
0
200 400 600 1000  
°C  
diF/dt  
TVJ  
-diF/dt  
Fig. 15 Dynamic parameters Qr, IRM  
versus TVJ  
Fig. 16 Recovery time trr versus -diF/dt  
Fig. 17 Peak forward voltage VFR and tfr  
versus diF/dt  
1
Constants for ZthJC calculation:  
K/W  
i
Rthi (K/W)  
ti (s)  
1
2
3
0.502  
0.193  
0.205  
0.0052  
0.0003  
0.0162  
0.1  
ZthJC  
0.01  
DSEP 29-06  
0.001  
0.00001  
s
0.0001  
0.001  
0.01  
0.1  
1
t
Fig. 18 Transient thermal resistance junction to case  
© 2000 IXYS All rights reserved  
5 - 5  
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