HiPerFETTM
Power MOSFETs
Single MOSFET Die
IXFN 120N20
VDSS = 200 V
ID25 = 120 A
RDS(on) = 17 mW
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low trr
trr £ 250 ns
Preliminary data sheet
miniBLOC, SOT-227 B (IXFN)
E153432
Symbol
TestConditions
MaximumRatings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
200
200
V
V
S
G
VGS
VGSM
Continuous
Transient
±20
±30
V
V
S
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
120
480
120
A
A
A
D
EAR
EAS
TC = 25°C
TC = 25°C
64
3
mJ
J
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
5
V/ns
PD
TJ
TC = 25°C
600
W
Features
-55 ... +150
°C
TJM
Tstg
150
-55 ... +150
°C
°C
• Encapsulating epoxy meets
UL 94 V-0, flammability classification
• Internationalstandardpackage
• miniBLOC, withAluminiumnitride
isolation
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
TL
1.6 mm (0.063 in.) from case for 10 s
-
°C
VISOL
50/60 Hz, RMS
IISOL £ 1 mA
t = 1 min
t = 1 s
2500
3000
V~
V~
Md
Mountingtorque
Terminalconnectiontorque
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
30
g
• Low package inductance
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-modeandresonant-mode
powersupplies
• DC choppers
Symbol
VDSS
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 3mA
200
2
V
• Temperatureandlightingcontrols
• Low voltage relays
VGS(th)
IGSS
VDS = VGS, ID = 8mA
4 V
VGS = ±20 V, VDS = 0
±200nA
Advantages
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
100 mA
2 mA
• Easy to mount
• Space savings
• High power density
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Note 1
17 mW
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
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