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IXFK90N30

型号：

IXFK90N30

描述：

HiPerFET功率MOSFET[ HiPerFET Power MOSFETs ]

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

127 K

下载PDF手册
HiPerFETTM  
Power MOSFETs  
IXFX 90N30  
IXFK 90N30  
VDSS = 300 V  
ID25 = 90 A  
RDS(on) = 33 mΩ  
Single MOSFET Die  
t ≤ 250 ns  
rr  
PLUS247TM  
Symbol  
TestConditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MΩ  
300  
300  
V
V
(TAB)  
G
VGS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
D
ID25  
ID104  
IDM  
TC = 25°C (MOSFET chip capability)  
TC = 104°C (External lead capability)  
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
90  
75  
360  
90  
A
A
A
A
TO-264AA(IXFK)  
IAR  
G
D
(TAB)  
EAR  
EAS  
TC = 25°C  
TC = 25°C  
64  
3
mJ  
J
S
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
dv/dt  
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS  
TJ ≤ 150°C, RG = 2 Ω  
5
V/ns  
PD  
TJ  
TC = 25°C  
560  
W
-55 ... +150  
°C  
Features  
l
International standard packages  
Low RDS (on) HDMOSTM process  
TJM  
Tstg  
150  
-55 ... +150  
°C  
°C  
l
l
l
Rugged polysilicon gate cell structure  
Unclamped Inductive Switching (UIS)  
rated  
TL  
1.6 mm (0.063 in.) from case for 10 s  
300  
°C  
Md  
Mounting torque  
TO-264  
0.4/6  
Nm/lb.in.  
l
l
Low package inductance  
- easy to drive and to protect  
Fast intrinsic rectifier  
Weight  
PLUS 247  
TO-264  
6
10  
g
g
Applications  
l
DC-DC converters  
l
Battery chargers  
Symbol  
VDSS  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
l
Switched-mode and resonant-mode  
power supplies  
min. typ. max.  
l
DC choppers  
VGS = 0 V, ID = 3mA  
300  
2.0  
V
l
AC motor control  
l
Temperature and lighting controls  
VGS(th)  
IGSS  
VDS = VGS, ID = 8mA  
4.0 V  
VGS = ±20 V, VDS = 0  
±100 nA  
Advantages  
IDSS  
VDS = VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
100 µA  
2 mA  
l
PLUS 247TM package for clip or spring  
mounting  
l
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
Note 1  
33 mΩ  
Space savings  
l
High power density  
98537A (12/01)  
© 2001 IXYS All rights reserved  
IXFK 90N30  
IXFX 90N30  
Symbol  
gfs  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
PLUS247TM Outline  
VDS = 10 V; ID = 0.5 ID25  
Note 1  
40  
70  
S
Ciss  
Coss  
Crss  
10000  
1800  
700  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
42  
55  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
RG = 1 Ω (External),  
100  
40  
Terminals: 1 - Gate  
2 - Drain (Collector)  
3-Source(Emitter)  
4 - Drain (Collector)  
Qg(on)  
Qgs  
360  
60  
nC  
nC  
nC  
Dim.  
A
Millimeter  
Inches  
Min.  
Max.  
Min. Max.  
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
Qgd  
180  
A
1
A
2
RthJC  
RthCK  
0.22 K/W  
K/W  
b
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
b
1
0.15  
b
2
C
D
0.61  
0.80  
.024 .031  
.819 .840  
20.80 21.34  
E15.75 16.13  
.620 .635  
e
5.45 BSC  
19.81 20.32  
.215 BSC  
Source-DrainDiode  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
L
.780 .800  
.150 .170  
L1  
3.81  
4.32  
Symbol  
TestConditions  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IS  
VGS = 0 V  
90  
A
A
TO-264 AA Outline  
ISM  
Repetitive;  
pulse width limited by TJM  
360  
VSD  
IF = IS, VGS = 0 V, Note 1  
1.5  
V
trr  
250 ns  
IF = 50A,-di/dt = 100 A/µs, VR = 100 V  
QRM  
IRM  
1.4  
10  
µC  
A
Millimeter  
Dim.  
Inches  
Min.  
Max.  
Min.  
Max.  
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %  
A
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.202  
A1  
A2  
.114  
.083  
b
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.056  
.106  
.122  
b1  
b2  
c
0.53  
25.91  
19.81  
0.83  
26.16  
19.96  
.021  
1.020  
.780  
.033  
1.030  
.786  
D
E
e
5.46BSC  
.215BSC  
J
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
K
L
L1  
20.32  
2.29  
20.83  
2.59  
.800  
.090  
.820  
.102  
P
3.17  
3.66  
.125  
.144  
Q
Q1  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
R
R1  
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETSandIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715 6,306,728B1  
5,381,025  
IXFK 90N30  
IXFX 90N30  
150  
125  
100  
75  
200  
160  
120  
80  
TJ = 125OC  
VGS = 9V  
8V  
TJ = 25OC  
VGS = 9V  
8V  
7V  
6V  
7V  
6V  
5V  
4V  
50  
5V  
40  
25  
4V  
0
0
0
2
4
6
8
10  
12  
0
1
2
3
4
5
6
7
8
VDS - Volts  
VDS - Volts  
Fig.2 OutputCharacteristics@Tj =125°C  
Fig.1 Output Characteristics @ Tj = 25°C  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
VGS = 10V  
VGS = 10V  
TJ = 125OC  
ID = 90A  
ID = 45A  
TJ = 25oC  
0
40  
80  
120  
160  
200  
25  
50  
75  
100  
125  
150  
ID - Amperes  
TJ - Degrees C  
Fig.3 RDS(on) vs. DrainCurrent  
Fig.4 TemperatureDependenceofDrain  
toSourceResistance  
100  
80  
60  
40  
20  
0
160  
140  
120  
100  
80  
TJ = 150oC  
TJ = 125oC  
60  
40  
TJ = 25oC  
20  
0
-50 -25  
0
25 50 75 100 125 150  
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5  
TC - Degrees C  
VGS - Volts  
Fig.6 DrainCurrentvsGateSourceVoltage  
Fig.5 DrainCurrentvs.CaseTemperature  
© 2001 IXYS All rights reserved  
IXFK 90N30  
IXFX 90N30  
20  
10  
5
10  
8
f = 100kHz  
Ciss  
VDS = 150 V  
ID = 45 A  
IG = 10 mA  
6
Coss  
4
Crss  
2
1
0.5  
0
0
5
10 15 20 25 30 35 40  
0
50  
100  
150  
200  
250  
300  
VDS - Volts  
Gate Charge - nC  
Fig.7GateChargeCharacteristicCurve  
Fig.8 Capacitance Curves  
200  
160  
120  
80  
TJ = 125OC  
TJ = 25OC  
40  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
VSD - Volts  
Fig.9DrainCurrentvsDraintoSourceVoltage  
1.000  
0.100  
0.010  
0.001  
10-4  
10-3  
10-2  
10-1  
100  
101  
Pulse Width - Seconds  
Fig.10TransientThermalImpedance  
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYSMOSFETSandIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715 6,306,728B1  
5,381,025  
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