IXFE 80N50
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
ISOPLUS-227 B
min.
typ. max.
VDS = 15 V; ID = IT, Note 2
50
70
S
Ciss
Coss
Crss
9890
1750
460
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
61
70
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
RG = 1 Ω (External),
102
27
Qg(on)
Qgs
380
80
nC
nC
nC
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
Qgd
173
RthJC
RthCK
0.22 K/W
K/W
0.07
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
IS
TestConditions
VGS = 0 V
80
320
1.3
A
A
V
ISM
Repetitive;
pulse width limited by TJM
VSD
IF = IS, VGS = 0 V,
Please see IXFN80N50 data sheet
forcharacteristiccurves.
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr
IF = 25A, -di/dt = 100 A/µs, VR = 100 V
250 ns
QRM
IRM
1.2
8
µC
A
Notes: 1. Pulse width limited by TJM.
2. Pulse test, t ≤ 300 ms, duty cycle d ≤ 2%.
3. IT Test current: IT = 40 A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
