IXFX 50N50
IXFX 55N50
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
PLUS247TM Outline
VDS = 10 V; ID = 0.5 ID25
Note 1
45
S
Ciss
Coss
Crss
9400
1280
460
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
45
60
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
RG = 2 Ω (External),
120
45
Terminals: 1 - Gate
2 - Drain (Collector)
3-Source(Emitter)
4 - Drain (Collector)
Qg(on)
Qgs
330
55
nC
nC
nC
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
Dim.
A
Millimeter
Inches
Min.
Max.
Min. Max.
Qgd
155
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
A
1
RthJC
RthCK
0.22 K/W
K/W
A
2
0.15
b
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
b
1
b
2
C
D
E
0.61
0.80
.024 .031
.819 .840
.620 .635
20.80 21.34
15.75 16.13
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
e
5.45 BSC
.215 BSC
L
19.81 20.32
.780 .800
.150 .170
Symbol
IS
TestConditions
L1
3.81
4.32
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170 .190
VGS = 0 V
55N50
50N50
55
50
A
A
ISM
Repetitive;
pulse width limited by TJM
55N50
50N50
220
200
A
A
VSD
IF = IS, VGS = 0 V
Note 1
1.5
V
trr
250 ns
QRM
IRM
1.0
10
µC
IF =25 A,-di/dt = 100 A/µs, VR = 100 V
A
Note: 1.Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
