HiPerFETTM Power MOSFETs
ISOPLUS247TM
VDSS
ID25
RDS(on)
IXFR 30N50Q
IXFR 32N50Q
500V
500V
trr £ 250 ns
29 A
30 A
0.16 W
0.15 W
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
High dV/dt, Low trr, HDMOSTM Family
Preliminary data
ISOPLUS 247TM
E153432
Symbol
TestConditions
MaximumRatings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
500
500
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
G
D
ID25
IDM
IAR
TC = 25°C
30N50
32N50
30N50
32N50
30N50
32N50
30
120
30
A
A
A
Isolated back surface*
D = Drain
TC = 25°C, Pulse width limited by TJM
TC = 25°C
G = Gate
S = Source
*Patentpending
EAS
EAR
TC = 25°C
TC = 25°C
1.5
45
J
mJ
Features
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
5
V/ns
• SiliconchiponDirect-Copper-Bond
substrate
- High power dissipation
PD
TC = 25°C
310
W
- Isolated mounting surface
- 2500V electricalisolation
• Low drain to tab capacitance(<50pF)
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
TL
1.6 mm (0.062 in.) from case for 10 s
300
2500
6
°C
V~
g
VISOL
Weight
50/60 Hz, RMS
t = 1 minute leads-to-tab
• Fast intrinsic Rectifier
Applications
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
DC-DC converters
• Battery chargers
min. typ. max.
• Switched-modeandresonant-mode
powersupplies
• DC choppers
VDSS
VGS(th)
IGSS
VGS = 0 V, ID = 1mA
VDS = VGS, ID = 4mA
VGS = ±20 VDC, VDS = 0
500
2
V
V
4
• AC motor control
±100
nA
IDSS
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
100
1
mA
mA
Advantages
• Easy assembly
• Space savings
• High power density
RDS(on)
VGS = 10 V, ID = IT
Notes 1, 2
30N50
32N50
0.16
0.15
W
W
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98608B(7/00)
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