HiPerFETTM
Power MOSFETs
VDSS
ID25
RDS(on)
IXFH/IXFM10N90
IXFH/IXFM12N90
IXFH13N90
900V 10 A 1.1 W
900V 12 A 0.9 W
900V 13 A 0.8 W
N-Channel Enhancement Mode
High dv/dt, Low trr, HDMOSTM Family
trr £ 250 ns
Symbol
TestConditions
MaximumRatings
TO-247 AD (IXFH)
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
900
900
V
V
VGS
VGSM
Continuous
Transient
±20
±30
V
V
(TAB)
ID25
IDM
IAR
TC = 25°C
10N90
12N90
13N90
10N90
12N90
13N90
10N90
12N90
13N90
10
12
13
40
48
13
10
12
13
A
A
A
A
A
A
A
A
A
TO-204 AA (IXFM)
TC = 25°C,
pulse width limited by TJM
TC = 25°C
G
D
EAR
TC = 25°C
30
5
mJ
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
,
V/ns
G = Gate,
S = Source,
D = Drain,
TAB = Drain
PD
TC = 25°C
300
W
Features
l
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
Internationalstandardpackages
Low RDS (on) HDMOSTM process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
l
l
l
TL
1.6 mm (0.062 in.) from case for 10 s
Mountingtorque
300
°C
l
l
Md
1.13/10 Nm/lb.in.
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
Weight
TO-204 = 18 g, TO-247 = 6 g
Applications
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
l
DC-DC converters
Synchronousrectification
Battery chargers
Switched-modeandresonant-mode
l
min. typ. max.
l
l
VDSS
VGS(th)
VGS = 0 V, ID = 3 mA
VDS = VGS, ID = 4 mA
900
2.0
V
V
powersupplies
DC choppers
AC motor control
Temperatureandlightingcontrols
4.5
l
l
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±100 nA
25 mA
l
l
Low voltage relays
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
1
mA
Advantages
Easy to mount with 1 screw (TO-247)
l
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
10N90
12N90
13N90
1.1
0.9
0.8
W
W
W
(isolatedmountingscrewhole)
Space savings
High power density
l
l
Pulse test, t £ 300 ms, duty cycle d £ 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
91530G(3/98)
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