请登录

免费注册
全部商品
电子元器件
方案中心
工业品
PDF资料
购物车 0
上传BOM

产品分类

找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

会员中心
购物车
技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXBK75N170

型号：

IXBK75N170

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

229 K

下载PDF手册
Preliminary Technical Information  
BiMOSFETTM Monolithic  
Bipolar MOS Transistor  
VCES = 1700V  
IC110 = 75A  
VCE(sat) ≤ 3.1V  
IXBK75N170  
IXBX75N170  
TO-264 (IXBK)  
Symbol  
VCES  
Test Conditions  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGE = 1MΩ  
Continuous  
Maximum Ratings  
1700  
1700  
±20  
V
V
V
V
VCGR  
G
C
VGES  
Tab  
E
VGEM  
Transient  
±30  
PLUS247TM (IXBX)  
IC25  
ILRMS  
TC = 25°C (Chip Capabilitty)  
TC = 25°C (Lead RMS Limit)  
200  
160  
A
A
IC110  
ICM  
TC = 110°C  
75  
A
A
TC = 25°C, 1ms  
580  
SSOA  
VGE= 15V, TVJ = 125°C, RG = 1Ω  
ICM = 150  
A
G
(RBSOA)  
Clamped Inductive Load  
VCE < 0.8 • VCES  
Tab  
C
E
PC  
TC = 25°C  
1040  
W
G = Gate  
E = Emitter  
C
= Collector  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
Tab = Collector  
TJM  
Tstg  
-55 ... +150  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062 in.) from Case for 10  
300  
260  
°C  
°C  
z International Standard Packages  
z High Blocking Voltage  
z High Current Handling Capability  
z Anti-Parallel Diode  
Md  
FC  
Mounting Torque (TO-264 )  
Mounting Force (PLUS247 )  
1.13/10  
20..120/4.5..27  
Nm/lb.in.  
N/lb.  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Advantages  
z High Power Density  
z Low Gate Drive Requirement  
z Intergrated Diode Can Be Used for  
Protection  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
1700  
2.5  
Typ.  
Max.  
BVCES  
VGE(th)  
IC = 250μA, VGE = 0V  
V
V
IC = 1.5mA, VCE = VGE  
5.5  
Applications  
ICES  
VCE = 0.8 • VCES, VGE = 0V  
25 μA  
z Capacitor Discharge  
z AC Switches  
TJ = 125°C  
2 mA  
z Switch-Mode and Resonant-Mode  
Power Supplies  
IGES  
VCE = 0V, VGE = ± 20V  
±100 nA  
VCE(sat)  
IC = IC110, VGE = 15V, Note 1  
2.6  
3.1  
3.1  
V
V
z UPS  
TJ = 125°C  
z AC Motor Drives  
DS100167A(10/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXBK75N170  
IXBX75N170  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-264 AA ( IXBK) Outline  
Min.  
Typ.  
Max.  
gfS  
IC = IC110, VCE = 10V, Note 1  
34  
56  
S
Cies  
Coes  
Cres  
6930  
400  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
150  
Qg  
350  
50  
nC  
nC  
nC  
Qge  
Qgc  
IC = IC110, VGE = 15V, VCE = 0.5 • VCES  
160  
td(on)  
tr  
td(off)  
tf  
td(on)  
tr  
td(off)  
tf  
46  
160  
260  
440  
ns  
ns  
ns  
ns  
Resistive load, TJ = 25°C  
Dim.  
Millimeter  
Inches  
IC = IC110, VGE = 15V  
Min.  
Max.  
Min.  
Max.  
A
A1  
A2  
b
b1  
b2  
c
D
E
e
J
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.202  
.114  
.083  
RG = 1Ω, VCE = 0.5 • VCES  
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.056  
.106  
.122  
47  
230  
260  
580  
ns  
ns  
ns  
ns  
Resistive load, TJ = 125°C  
0.53  
0.83  
.021  
1.020  
.780  
.033  
1.030  
.786  
IC = IC110, VGE = 15V  
25.91 26.16  
19.81 19.96  
5.46 BSC  
RG = 1Ω, VCE = 0.5 • VCES  
.215 BSC  
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
RthJC  
RthCS  
0.12 °C/W  
°C/W  
K
L
L1  
P
20.32 20.83  
.800  
.090  
.820  
.102  
0.15  
2.29  
2.59  
3.17  
3.66  
.125  
.144  
Q
Q1  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
R
R1  
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
Reverse Diode  
PLUS247TM (IXBX) Outline  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
Min.  
Typ.  
Max  
VF  
IF = IC110, VGE = 0V, Note 1  
3.0  
V
trr  
IRM  
QRM  
1.5  
50  
38.2  
μs  
A
μC  
IF = 37A, VGE = 0V, -diF/dt = 100A/μs  
VR = 100V, VGE = 0V  
Note  
Terminals: 1 - Gate  
2 - Drain (Collector)  
3 - Source (Emitter)  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
Additional provisions for lead-to-lead isolation are required at VCE >1200V.  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
PRELIMINARY TECHNICAL INFORMATION  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
The product presented herein is under development. The Technical Specifications offered are derived  
from data gathered during objective characterizations of preliminary engineering lots; but also may yet  
contain some information supplied during a pre-production design evaluation. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or moreof the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXBK75N170  
IXBX75N170  
Fig. 1. Output Characteristics  
@ 25ºC  
Fig. 2. Extended Output Characteristics  
@ 25ºC  
160  
140  
120  
100  
80  
320  
280  
240  
200  
160  
120  
80  
VGE = 25V  
VGE = 25V  
17V  
19V  
15V  
13V  
11V  
15V  
13V  
11V  
9V  
9V  
7V  
60  
40  
20  
40  
7V  
0
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
0
2
4
6
8
10  
12  
14  
16  
18  
150  
9.5  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics  
@ 125ºC  
160  
140  
120  
100  
80  
1.7  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
VGE = 25V  
19V  
VGE = 15V  
15V  
13V  
11V  
I C = 150A  
9V  
7V  
I C = 75A  
60  
40  
20  
I C = 37.5A  
5V  
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
-50  
-25  
0
25  
50  
75  
100  
125  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage  
vs. Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
200  
180  
160  
140  
120  
100  
80  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
TJ = 25ºC  
I C = 150A  
TJ = 125ºC  
25ºC  
75A  
- 40ºC  
60  
40  
37.5A  
20  
0
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
5
7
9
11  
13  
15  
17  
19  
21  
23  
25  
VGE - Volts  
VGE - Volts  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXYS REF: B_75N170(8T)7-01-09  
IXBK75N170  
IXBX75N170  
Fig. 8. Forward Voltage Drop of  
Fig. 7. Transconductance  
Intrinsic Diode  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
300  
250  
200  
150  
100  
50  
TJ = - 40ºC  
125ºC  
TJ = 25ºC  
25ºC  
TJ = 125ºC  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
200  
220  
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
2.0  
2.2  
2.4  
VF - Volts  
IC - Amperes  
Fig. 10. Capacitance  
Fig. 9. Gate Charge  
16  
14  
12  
10  
8
100,000  
10,000  
1,000  
100  
= 1 MHz  
f
VCE = 850V  
I
I
C = 75A  
C
G = 10mA  
ies  
C
C
oes  
6
4
res  
2
10  
0
0
5
10  
15  
20  
25  
30  
35  
40  
0
40  
80  
120  
160  
200  
240  
280  
320  
360  
VCE - Volts  
QG - NanoCoulombs  
Fig. 12. Maximum Transient Thermal Impedance  
Fig. 11. Reverse-Bias Safe Operating Area  
160  
140  
120  
100  
80  
1.000  
0.100  
0.010  
0.001  
60  
40  
TJ = 125ºC  
G = 1Ω  
dV / dt < 10V / ns  
R
20  
0
200  
400  
600  
800  
1000  
1200  
1400  
1600  
1800  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
VCE - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXBK75N170  
IXBX75N170  
Fig. 14. Resistive Turn-on  
Fig. 13. Resistive Turn-on  
Rise Time vs. Collector Current  
Rise Time vs. Junction Temperature  
450  
400  
350  
300  
250  
200  
150  
100  
50  
400  
360  
320  
280  
240  
200  
160  
120  
RG = 1Ω , VGE = 15V  
CE = 850V  
RG = 1Ω , VGE = 15V  
V
VCE = 850V  
I C = 150A  
TJ = 125ºC  
TJ = 25ºC  
I C = 75A  
0
25  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
30  
25  
1
40  
50  
60  
70  
80  
90  
100 110 120 130 140 150  
TJ - Degrees Centigrade  
IC - Amperes  
Fig. 16. Resistive Turn-off  
Switching Times vs. Junction Temperature  
Fig. 15. Resistive Turn-on  
Switching Times vs. Gate Resistance  
800  
700  
600  
500  
400  
300  
200  
100  
320  
300  
280  
260  
240  
220  
200  
180  
800  
700  
600  
500  
400  
300  
200  
100  
80  
75  
70  
65  
60  
55  
50  
45  
tf  
RG = 1Ω, VGE = 15V  
VCE = 850V  
td(off) - - - -  
tr  
td(on) - - - -  
TJ = 125ºC, VGE = 15V  
V
CE = 850V  
I C = 75A  
I C = 150A  
I C = 75A  
I C = 150A  
35  
45  
55  
65  
75  
85  
95  
105  
115  
125  
1
2
3
4
5
6
7
8
9
10  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 17. Resistive Turn-off  
Switching Times vs. Collector Current  
Fig. 18. Resistive Turn-off  
Switching Times vs. Gate Resistance  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
340  
320  
300  
280  
260  
240  
220  
200  
180  
160  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
520  
480  
440  
400  
360  
320  
280  
240  
200  
160  
tf  
RG = 1Ω, VGE = 15V  
CE = 850V  
td(off)  
t f  
TJ = 125ºC, VGE = 15V  
VCE = 850V  
td(off  
- - - -  
) - - - -  
V
I C = 75A  
I C = 150A  
TJ = 125ºC, 25ºC  
2
3
4
5
6
7
8
9
10  
30  
40  
50  
60  
70  
80  
90 100 110 120 130 140 150  
RG - Ohms  
IC - Amperes  
© 2009 IXYS CORPORATION, All Rights Reserved  
IXYS REF: B_75N170(8T)7-01-09  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
厂商 型号 描述 页数 下载

IXYS

 		IXBA14N300HV [ Insulated Gate Bipolar Transistor ] 6 页

LITTELFUSE

 		IXBA16N170AHV [ Insulated Gate Bipolar Transistor, ] 3 页

IXYS

 		IXBA16N170AHV [ Insulated Gate Bipolar Transistor, ] 2 页

IXYS

 		IXBD4410 ISOSMART半桥驱动器芯片组[ ISOSMART Half Bridge Driver Chipset ] 11 页

IXYS

 		IXBD4410P ISOSMART半桥驱动器芯片组[ ISOSMART Half Bridge Driver Chipset ] 11 页

ETC

 		IXBD4410PC 接口IC\n[ Interface IC ] 16 页

IXYS

 		IXBD4410PI ISOSMART半桥驱动器芯片组[ ISOSMART Half Bridge Driver Chipset ] 11 页

IXYS

 		IXBD4410SI ISOSMART半桥驱动器芯片组[ ISOSMART Half Bridge Driver Chipset ] 11 页

IXYS

 		IXBD4411 ISOSMART半桥驱动器芯片组[ ISOSMART Half Bridge Driver Chipset ] 11 页

ETC

 		IXBD4411PC 接口IC\n[ Interface IC ] 16 页

购物指南

支付方式

配送服务

售后服务

发票须知

优惠券使用规则

特色服务

PCBA制造

国产品牌推荐

国产料号替代

质量保证

技术资料

行业资讯

关于我们

关于壹壹捌

联系我们

联系我们

服务热线：400-618-9990

企业邮箱：sales@ic118.com

服务时间：周一至周六 8:30-17:30

壹壹捌官方微信号

PDF索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引：

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

深圳网络警察报警平台
公共信息安全网络监察
经营性网站备案信息
不良信息举报中心
工商网监电子标识
全国公安机关备案
0.195509s