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IXFA4N100Q-TRL

型号：

IXFA4N100Q-TRL

品牌：

IXYS[ IXYS CORPORATION ]

页数：

5 页

PDF大小：

193 K

下载PDF手册
HiperFETTM  
Power MOSFETs  
Q-Class  
VDSS = 1000V  
ID25 = 4A  
RDS(on) ≤ 3.0Ω  
IXFA4N100Q  
IXFP4N100Q  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-263 AA (IXFA)  
Fast Intrinsic Diode  
G
S
Symbol  
Test Conditions  
Maximum Ratings  
D (Tab)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
1000  
1000  
V
V
TO-220AB (IXFP)  
VGSS  
VGSM  
Continuous  
Transient  
± 20  
± 30  
V
V
ID25  
IDM  
TC = 25°C  
4
16  
A
A
TC = 25°C, Pulse Width Limited by TJM  
G
D
D (Tab)  
= Drain  
IA  
EAS  
TC = 25°C  
TC = 25°C  
4
700  
A
mJ  
S
dv/dt  
PD  
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C  
TC = 25°C  
5
V/ns  
W
G = Gate  
S = Source  
D
Tab = Drain  
150  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
z International Standard Packages  
z Avalanche Rated  
MC  
Md  
Mounting Force (TO-263)  
Mounting Torque (TO-220)  
10..65/2.2..14.6  
1.13/10  
Nm/lb.in.  
Nm/lb.in.  
z Fast Intrinsic Diode  
z Low QG  
z Low RDS(on)  
z Low Drain-to-Tab Capacitance  
z Low Package Inductance  
Weight  
TO-263  
TO-220  
2.5  
3.0  
g
g
Advantages  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
1000  
2.5  
Typ.  
Max.  
z
High Power Density  
Easy to Mount  
Space Savings  
z
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
V
V
z
VDS = VGS, ID = 1.5mA  
VGS = ± 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
4.5  
± 100 nA  
Applications  
IDSS  
50 μA  
1 mA  
z
TJ = 125°C  
DC-DC Converters  
Battery Chargers  
Switch-Mode and Resonant-Mode  
z
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
3.0  
Ω
z
Power Supplies  
DC Choppers  
Temperature and Lighting Controls  
z
z
DS98705B(04/11)  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXFA4N100Q  
IXFP4N100Q  
Symbol  
Test Conditions  
Characteristic Values  
TO-263 Outline  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
1.5  
2.5  
S
Ciss  
Coss  
Crss  
1050  
120  
30  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
17  
15  
32  
18  
ns  
ns  
ns  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 4.7Ω (External)  
Qg(on)  
Qgs  
39  
9
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
23  
RthJC  
RthCS  
0.80 °C/W  
°C/W  
TO-220  
0.50  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
4
A
A
V
TO-220 Outline  
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
16  
1.5  
trr  
QRM  
IRM  
250 ns  
IF = IS, -di/dt = 100A/μs  
VR = 100V, VGS = 0V  
0.52  
1.80  
μC  
A
Note  
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.  
Pins: 1 - Gate  
2 - Drain  
3 - Source  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,850,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXFA4N100Q  
IXFP4N100Q  
Figure 1. Output Characteristics at 25OC  
4
Figure 2. Extended Output Characteristics at 125OC  
6
5
4
3
2
1
0
T
= 25°C  
V
= 10V  
J
GS  
V
= 10V  
T
= 25°C  
GS  
J
9V  
8V  
9V  
8V  
7V  
3
2
1
0
7V  
6V  
6V  
5V  
5V  
0
4
8
12  
16  
20  
0
2
4
6
8
10  
VCE - Volts  
VDS - Volts  
Figure 4. Admittance Curves  
Figure 3. Output characteristics at 125°C  
4
4
TJ = 125°C  
V
= 10V  
GS  
9V  
8V  
3
3
2
1
0
7V  
O
T
= 125 C  
J
2
1
0
6V  
5V  
O
T
= 25  
C
J
0
5
10  
VDS - Volts  
15  
20  
3
4
5
6
7
8
VGS - Volts  
Figure 6. RDS(on) normalized to 0.5 ID25 value vs. TJ  
2.4  
Figure 5. RDS(on) normalized to 0.5 ID25 value vs. ID  
2.4  
V
= 10V  
GS  
V
I
= 10V  
GS  
= 2A  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
D
T
J
= 125°C  
T
= 25°C  
J
0
1
2
3
4
5
6
25  
50  
75  
100  
125  
150  
TJ - Degrees C  
ID - Amperes  
© 2011 IXYS CORPORATION, All Rights Reserved  
IXFA4N100Q  
IXFP4N100Q  
Figure 8. Capacitance Curves  
Figure 7. Gate Charge  
2000  
1000  
15  
12  
9
Ciss  
VDS = 600 V  
ID = 3 A  
f = 1MHz  
IG = 10 mA  
Coss  
Crss  
100  
10  
6
3
0
0
5
10  
15  
20  
25  
30  
35  
0
10  
20  
30  
40  
50  
60  
VDS - Volts  
Gate Charge - nC  
Figure 9. Forward Voltage Drop of the Intrinsic Diode  
5
10  
4
8
60  
6
3
2
1
0
TJ = 125OC  
4
TJ = 25OC  
2
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
-50 -25  
0
25 50 75 100 125 150  
VSD - Volts  
TC - Degrees Centigrade  
Figure 11. Transient Thermal Resistance  
1.00  
0.10  
0.01  
10-4  
10-3  
10-2  
10-1  
100  
101  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: IXT_4N100Q (4U)04-01-11-A  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
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