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IXFX44N80Q3

型号：

IXFX44N80Q3

品牌：

IXYS[ IXYS CORPORATION ]

页数：

7 页

PDF大小：

1962 K

下载PDF手册
Q3-Class  
VDSS = 800V  
ID25 = 44A  
RDS(on) 190m  
IXFK44N80Q3  
IXFX44N80Q3  
HiperFETTM  
Power MOSFET  
D
S
trr  
300ns  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Rectifier  
G
TO-264  
(IXFK)  
G
D
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
Tab  
TJ = 25C to 150C  
800  
800  
V
V
VDGR  
TJ = 25C to 150C, RGS = 1M  
VGSS  
VGSM  
Continuous  
Transient  
30  
40  
V
V
PLUS247  
(IXFX)  
ID25  
IDM  
TC = 25C  
44  
A
A
TC = 25C, Pulse Width Limited by TJM  
130  
IA  
EAS  
TC = 25C  
TC = 25C  
44  
3.5  
A
J
G
D
Tab  
S
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150C  
TC = 25C  
50  
V/ns  
W
G = Gate  
S = Source  
D
= Drain  
1250  
Tab = Drain  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
C  
C  
C  
Features  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
Plastic Body for 10s  
300  
260  
°C  
°C  
Avalanche Rated  
M
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
20..120 /4.5..27  
Nm/lb.in.  
N/lb.  
Low Intrinsic Gate Resistance  
Low Package Inductance  
Fast Intrinsic Rectifier  
Low RDS(on) and QG  
FCd  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Advantages  
High Power Density  
Easy to Mount  
Space Savings  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
800  
3.5  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS = 30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
6.5  
Applications  
200 nA  
IDSS  
50 A  
DC-DC Converters  
Battery Chargers  
Switch-Mode and Resonant-Mode  
TJ = 125C  
2.5 mA  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
190 m  
Power Supplies  
DC Choppers  
Temperature and Lighting Controls  
DS100359C(1/20)  
© 2020 IXYS CORPORATION, All Rights Reserved  
IXFK44N80Q3  
IXFX44N80Q3  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
VDS = 20V, ID = 0.5 • ID25, Note 1  
VGS = 0V, VDS = 25V, f = 1MHz  
Gate Input Resistance  
22  
37  
S
Ciss  
Coss  
Crss  
10950  
957  
pF  
pF  
pF  
95  
RGi  
0.20  
45  
td(on)  
ns  
Resistive Switching Times  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1(External)  
tr  
60  
63  
ns  
ns  
td(off)  
tf  
20  
ns  
Qg(on)  
Qgs  
185  
67  
nC  
nC  
nC  
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
83  
RthJC  
RthCS  
0.10C/W  
C/W  
0.15  
Source-Drain Diode  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
IS  
VGS = 0V  
44  
A
A
V
ISM  
VSD  
Repetitive, Pulse Width Limited by TJM  
IF = IS, VGS = 0V, Note 1  
176  
1.4  
trr  
QRM  
IRM  
300 ns  
C  
IF = 22A, -di/dt = 100A/s  
1.8  
13.4  
VR = 100V, VGS = 0V  
A
Note  
1. Pulse test, t 300s, duty cycle, d 2%.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,727,585  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,534,343  
6,583,505  
6,710,405 B2 6,759,692  
6,710,463  
6,771,478 B2 7,071,537  
IXFK44N80Q3  
IXFX44N80Q3  
Fig. 1. Output Characteristics @ TJ = 25oC  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
45  
40  
35  
30  
25  
20  
15  
10  
5
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
V
= 10V  
9V  
GS  
V
= 10V  
9V  
GS  
8V  
8V  
7V  
6V  
7V  
6V  
0
0
1
2
3
4
5
6
7
8
0
5
10  
15  
20  
25  
30  
VDS - Volts  
VDS - Volts  
Fig. 4. RDS(on) Normalized to ID = 22A Value vs.  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 125oC  
45  
40  
35  
30  
25  
20  
15  
10  
5
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
0.2  
V
= 10V  
9V  
GS  
V
= 10V  
GS  
I
= 44A  
D
8V  
I = 22A  
D
7V  
6V  
0
0
2
4
6
8
10  
12  
14  
16  
18  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VDS - Volts  
TJ - Degrees Centigrade  
Fig. 6. Maximum Drain Current vs.  
Case Temperature  
Fig. 5. RDS(on) Normalized to ID = 22A Value vs.  
Drain Current  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
3.0  
2.6  
2.2  
1.8  
1.4  
1.0  
0.6  
V
= 10V  
GS  
T = 125oC  
J
T = 25oC  
J
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
0
10  
20  
30  
40  
50  
60  
70  
80  
90  
100  
ID - Amperes  
TC - Degrees Centigrade  
© 2020 IXYS CORPORATION, All Rights Reserved  
IXFK44N80Q3  
IXFX44N80Q3  
Fig. 7. Input Admittance  
Fig. 8. Transconductance  
70  
60  
50  
40  
30  
20  
10  
0
= - 40oC  
60  
50  
40  
30  
20  
10  
0
T
J
T
J
= 125oC  
25oC  
25oC  
- 40oC  
125oC  
4.0  
0.3  
0
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
1.2  
40  
0
10  
20  
30  
40  
50  
60  
70  
VGS - Volts  
ID - Amperes  
Fig. 9. Forward Voltage Drop of Intrinsic Diode  
Fig. 10. Gate Charge  
140  
120  
100  
80  
10  
9
8
7
6
5
4
3
2
1
0
V
= 400V  
DS  
I
I
= 22A  
D
G
= 10mA  
60  
T
= 125oC  
J
40  
T
J
= 25oC  
20  
0
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
0
40  
80  
120  
160  
200  
240  
VSD - Volts  
QG - NanoCoulombs  
Fig. 12. Forward-Bias Safe Operating Area  
Fig. 11. Capacitance  
1000  
100  
10  
100,000  
10,000  
1,000  
100  
= 1 MHz  
f
R
Limit  
DS(on)  
C
iss  
25µs  
100µs  
C
C
oss  
1
T
J
= 150oC  
= 25oC  
1ms  
rss  
T
C
Single Pulse  
10  
0.1  
5
10  
15  
20  
25  
30  
35  
10  
100  
1,000  
VDS - Volts  
VDS - Volts  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFK44N80Q3  
IXFX44N80Q3  
Fig. 13. Maximum Transient Thermal Impedance  
aaaaa  
0.2  
0.1  
0.01  
0.001  
0.0001  
0.001  
0.01  
0.1  
1
10  
Pulse Width - Seconds  
© 2020 IXYS CORPORATION, All Rights Reserved  
IXYS REF: F_44N80Q3(Q8-R88)10-10-12  
IXFK44N80Q3  
IXFX44N80Q3  
TO-264 Outline  
D
B
E
A
Q
S
0R  
D
Q1  
0R1  
L1  
1
2
3
C
L
A1  
M
C A  
M
J
b1  
b
c
b2  
e
1 = Gate  
2,4 = Drain  
3 = Source  
0P1  
BACK SIDE  
A
M
M
K
D
B
0P  
4
PLUS247TM Outline  
A
E
E1  
Q
A2  
D2  
R
D
4
1
2
3
L1  
L
b
e
A1  
3 PLCS  
b2  
C
2 PLCS  
2 PLCS  
b4  
1 = Gate  
2,4 = Drain  
3 = Source  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXFK44N80Q3  
IXFX44N80Q3  
Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently  
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,  
and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.  
© 2020 IXYS CORPORATION, All Rights Reserved  
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