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LYT770-HL

型号:

LYT770-HL

描述:

TOPLED RG[ TOPLED RG ]

品牌:

INFINEON[ Infineon ]

页数:

8 页

PDF大小:

497 K

TOPLED® RG  
LS T770, LO T770, LY T770  
LG T770, LP T770  
Besondere Merkmale  
Gehäusefarbe: weiß  
als optischer Indikator einsetzbar  
zur Hinterleuchtung, Lichtleiter- und Linseneinkopplung  
für alle SMT-Bestück- und Löttechniken geeignet  
gegurtet (12-mm-Filmgurt)  
Störimpulsfest nach DIN 40839  
Features  
color of package: white  
for use as optical indicator  
for backlighting, optical coupling into light pipes and lenses  
suitable for all SMT assembly and soldering methods  
available taped on reel (12 mm tape)  
load dump resistant acc. to DIN 40839  
Semiconductor Group  
1
11.96  
LS T770, LO T770, LY T770  
LG T770, LP T770  
Typ  
Emissions- Farbe der  
Lichtstärke Lichtstrom  
Bestellnummer  
Ordering Code  
farbe  
Lichtaustritts-  
fläche  
Type  
Color of  
Color of the  
Luminous  
Luminous  
Flux  
Emission  
Light Emitting Intensity  
Area  
I = 10 mA  
F
I = 10 mA  
F
IV (mcd)  
ΦV (mlm)  
LS T770-HK  
LS T770-J  
LS T770-K  
LS T770-JL  
super-red  
orange  
yellow  
colorless clear  
2.5 ... 12.5  
4.0 ... 8.0 18 (typ.)  
6.3 ... 12.5 30 (typ.)  
-
Q62703-Q2726  
Q62703-Q2727  
Q62703-Q2728  
Q62703-Q2729  
4.0 ... 20.0  
-
LO T770-HK  
LO T770-J  
LO T770-K  
LO T770-JL  
colorless clear  
colorless clear  
2.5 ... 12.5  
4.0 ... 8.0 18 (typ.)  
6.3 ... 12.5 30 (typ.)  
-
Q62703-Q2730  
Q62703-Q2731  
Q62703-Q2732  
Q62703-Q2733  
4.0 ... 20.0  
-
LY T770-HL  
LY T770-J  
LY T770-K  
LY T770-L  
LY T770-JM  
2.5 ... 20.0  
-
Q62703-Q2734  
Q62703-Q2736  
Q62703-Q3241  
Q62703-Q3906  
Q62703-Q2737  
4.0 ... 8.0 18 (typ.)  
6.3 ... 12.5 30 (typ.)  
10.0 ... 20.0 45 (typ.)  
4.0 ... 32.0  
-
LG T770-HL  
LG T770-J  
LG T770-K  
LG T770-L  
LG T770-JM  
green  
colorless clear  
colorless clear  
2.5 ... 20.0  
-
Q62703-Q2738  
Q62703-Q2739  
Q62703-Q2740  
Q62703-Q3100  
Q62703-Q2741  
4.0 ... 8.0 18 (typ.)  
6.3 ... 12.5 30 (typ.)  
10.0 ... 20.0 45 (typ.)  
4.0 ... 32.0  
-
LP T770-FJ  
LP T770-G  
LP T770-H  
LP T770-GK  
pure green  
1.0 ... 8.0  
1.6 ... 3.2 8 (typ.)  
2.5 ... 5.0 12 (typ.)  
-
Q62703-Q2742  
Q62703-Q2743  
Q62703-Q2744  
Q62703-Q2745  
1.6 ... 12.5  
-
Streuung der Lichtstärke in einer Verpackungseinheit IV max / IV min 2.0.  
Luminous intensity ratio in one packaging unit IV max / IV min 2.0.  
Semiconductor Group  
2
LS T770, LO T770, LY T770  
LG T770, LP T770  
Grenzwerte  
Maximum Ratings  
Bezeichnung  
Parameter  
Symbol  
Symbol  
Werte  
Values  
Einheit  
Unit  
Betriebstemperatur  
Operating temperature range  
Top  
Tstg  
Tj  
– 55 ... + 100  
– 55 ... + 100  
+ 100  
˚C  
˚C  
˚C  
mA  
A
Lagertemperatur  
Storage temperature range  
Sperrschichttemperatur  
Junction temperature  
Durchlaßstrom  
Forward current  
IF  
30  
Stoßstrom  
IFM  
0.5  
Surge current  
t 10 µs, D = 0.005  
Sperrspanung  
VR  
5
V
Reverse voltage  
Verlustleistung  
Power dissipation  
Ptot  
100  
400  
mW  
K/W  
Wärmewiderstand  
Thermal resistance  
Sperrschicht / Umgebung  
Junction / air  
Montage auf PC-board*) (Padgröße je 16 mm )  
mounted on PC board*) (pad size 16 mm each)  
Rth JA  
2
2
)
*
PC-board: FR4  
Semiconductor Group  
3
LS T770, LO T770, LY T770  
LG T770, LP T770  
Kennwerte (TA = 25 ˚C)  
Characteristics  
Bezeichnung  
Parameter  
Symbol  
Symbol  
Werte  
Values  
Einheit  
Unit  
LS LO LY LG LP  
Wellenlänge des emittierten Lichtes  
Wavelength at peak emission  
IF = 10 mA  
(typ.) λpeak  
(typ.)  
635 610 586 565 557 nm  
628 605 590 570 560 nm  
Dominantwellenlänge  
Dominant wavelength  
IF = 10 mA  
(typ.) λdom  
(typ.)  
Spektrale Bandbreite bei 50 % Irel max  
Spectral bandwidth at 50 % Irel max  
IF = 10 mA  
(typ.) λ  
(typ.)  
45  
40  
45  
25  
22  
nm  
Abstrahlwinkel bei 50 % Iv (Vollwinkel)  
Viewing angle at 50 % Iv  
2ϕ  
120 120 120 120 120 Grad  
deg.  
Durchlaßspannung  
Forward voltage  
IF = 10 mA  
(typ.) VF  
(max.) VF  
2.0 2.0 2.0 2.0 2.0  
2.6 2.6 2.6 2.6 2.6  
V
V
Sperrstrom  
Reverse current  
VR = 5 V  
(typ.) IR  
(max.) IR  
0.01 0.01 0.01 0.01 0.01 µA  
10  
10  
10  
10  
10  
µA  
Kapazität  
(typ.) C0  
12  
8
10  
15  
15  
pF  
Capacitance  
VR = 0 V, f = 1 MHz  
Schaltzeiten:  
Switching times:  
IV from 10 % to 90 %  
IV from 90 % to 10 %  
IF = 100 mA, tp = 10 µs, RL = 50 Ω  
(typ.) tr  
(typ.) tf  
300 300 300 450 450 ns  
150 150 150 200 200 ns  
Semiconductor Group  
4
LS T770, LO T770, LY T770  
LG T770, LP T770  
Relative spektrale Emission I = f (λ), TA = 25 ˚C, I = 10 mA  
rel  
F
Relative spectral emission  
V(λ) = spektrale Augenempfindlichkeit  
Standard eye response curve  
Abstrahlcharakteristik I = f (ϕ)  
rel  
Radiation characteristic  
Semiconductor Group  
5
LS T770, LO T770, LY T770  
LG T770, LP T770  
Durchlaßstrom I = f (VF)  
Relative Lichtstärke IV/IV(10 mA) = f (IF)  
F
Forward current  
Relative luminous intensity  
TA = 25 ˚C  
TA = 25 ˚C  
Zulässige ImpulsbelastbarkeitI = f (tp)  
Permissible pulse handling capability  
Maximal zulässiger Durchlaßstrom  
Max. permissible forward current  
F
Duty cycle D = parameter, TA = 25 ˚C  
I = f (TA)  
F
Semiconductor Group  
6
LS T770, LO T770, LY T770  
LG T770, LP T770  
Wellenlänge der Strahlung λpeak = f (TA)  
Dominantwellenlänge λdom = f (TA)  
Wavelength at peak emission  
Dominant wavelength  
I = 10 mA  
F
I = 10 mA  
F
Durchlaßspannung VF = f (TA)  
Relative Lichtstärke IV / IV(25 ˚C ) = f (TA)  
Forward voltage  
Relative luminous intensity  
I = 10 mA  
F
I = 10 mA  
F
Semiconductor Group  
7
LS T770, LO T770, LY T770  
LG T770, LP T770  
Maßzeichnung  
(Maße in mm, wenn nicht anders angegeben)  
Package Outlines  
(Dimensions in mm, unless otherwise specified)  
Kathodenkennung:  
Cathode mark:  
abgeschrägte Ecke  
bevelled edge  
Semiconductor Group  
8
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