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LYR970-JO

型号:

LYR970-JO

描述:

CHIPLED[ CHIPLED ]

品牌:

INFINEON[ Infineon ]

页数:

6 页

PDF大小:

60 K

CHIPLED  
LY R970, LO R970, LS R970  
Besondere Merkmale  
Gehäusebauform: 0805  
Industriestandard bzgl. Lötpadraster  
geringe Bauteilhöhe  
für IR-Lötung geeignet  
für Hinterleuchtungen und als opt. Indikator einsetzbar  
gegurtet (8-mm-Filmgurt)  
VEO06987  
Features  
0805 package  
Industry standard footprint  
low profile  
suitable for IR reflow soldering process  
for use as optical indicator and backlighting  
available taped on reel (8 mm tape)  
Typ  
Emissions- Farbe der  
Lichtstärke  
Luminous  
Lichtstrom Bestellnummer  
farbe  
Lichtaustritts-  
fläche  
Type  
Color of  
Color of the  
Luminous  
Flux  
Ordering Code  
Emission  
Light Emitting Intensity  
Area  
I = 20 mA  
IV (mcd)  
IF = 20 mA  
ΦV (mlm)  
F
LY R970-JO  
LO R970-JO  
LS R970-JO  
yellow  
orange  
super-red  
colorless clear  
4.0 (7 typ.)  
4.0 (7 typ.)  
4.0 (7 typ.)  
60 (typ.)  
60 (typ.)  
60 (typ.)  
Q62702-P5104  
Q62702-P5100  
Q62702-P5102  
Semiconductor Group  
1
1998-09-01  
LY R970, LO R970, LS R970  
Grenzwerte  
Maximum Ratings  
Bezeichnung  
Parameter  
Symbol  
Symbol  
Werte  
Values  
Einheit  
Unit  
Betriebstemperatur  
Operating temperature range  
Top  
Tstg  
Tj  
– 30 ... + 85  
– 40 ... + 85  
+ 95  
°C  
°C  
°C  
mA  
A
Lagertemperatur  
Storage temperature range  
Sperrschichttemperatur  
Junction temperature  
Durchlaßstrom  
Forward current  
IF  
25  
Stoßstrom  
IFM  
0.1  
Surge current  
t 10 µs, D = 0.005  
Sperrspanung  
VR  
5
V
Reverse voltage  
Verlustleistung, TA = 25 °C  
Power dissipation, TA = 25 °C  
Ptot  
75  
610  
mW  
K/W  
Wärmewiderstand  
Sperrschicht / Umgebung  
Thermal resistance  
Junction / air  
Rth JA  
Semiconductor Group  
2
1998-09-01  
LY R970, LO R970, LS R970  
Kennwerte (TA = 25 °C)  
Characteristics  
Bezeichnung  
Parameter  
Symbol  
Symbol  
Werte  
Values  
Einheit  
Unit  
LY  
LO  
LS  
Wellenlänge des emittierten Lichtes  
Wavelength at peak emission  
IF = 20 mA  
(typ.)  
(typ.)  
λpeak  
λdom  
λ  
586  
610  
635  
nm  
nm  
nm  
Dominantwellenlänge  
Dominant wavelength  
IF = 20 mA  
(typ.)  
(typ.)  
590  
45  
605  
40  
628  
45  
Spektrale Bandbreite bei 50 % Irel max  
Spectral bandwidth at 50 % Irel max  
IF = 20 mA  
(typ.)  
(typ.)  
Abstrahlwinkel bei 50 % Iv (Vollwinkel)  
Viewing angle at 50 % Iv  
2ϕ  
160  
160  
160  
Grad  
deg.  
Durchlaßspannung  
Forward voltage  
IF = 20 mA  
(typ.)  
(max.)  
VF  
VF  
2.3  
2.9  
2.3  
2.9  
2.3  
2.9  
V
V
Sperrstrom  
Reverse current  
VR = 5 V  
(typ.)  
(max.)  
IR  
IR  
0.01  
10  
0.01  
10  
0.01  
10  
µA  
µA  
Temperaturkoeffizient von λpeak  
(IF = 20 mA)  
Temperature coefficient of λpeak  
(IF = 20 mA)  
TC  
peak  
λ
0.1  
0.1  
0.1  
nm/K  
(typ.)  
(typ.)  
Temperaturkoeffizient von λdom, IF = 20 mA (typ.) TC  
Temperature coefficient of λdom, IF = 20 mA (typ.)  
0.08  
0.08  
0.08  
nm/K  
mV/K  
dom  
λ
Temperaturkoeffizient von VF, IF = 20 mA (typ.) TC  
Temperature coefficient of VF, IF = 20 mA (typ.)  
– 1.9  
– 1.9  
– 1.9  
F
V
Semiconductor Group  
3
1998-09-01  
LY R970, LO R970, LS R970  
Relative spektrale Emission I = f (λ), TA = 25 °C, IF = 20 mA  
rel  
Relative spectral emission  
V(λ) = spektrale Augenempfindlichkeit  
Standard eye response curve  
OHL00411  
100  
%
Ιrel  
80  
V
λ
60  
40  
20  
0
400  
450  
500  
550  
600  
650  
700  
nm  
λ
Abstrahlcharakteristik I = f (ϕ)  
rel  
Radiation characteristic  
OHL00408  
40˚  
30˚  
20˚  
10˚  
0˚  
1.0  
ϕ
50˚  
0.8  
0.6  
0.4  
0.2  
0
60˚  
70˚  
80˚  
90˚  
100˚  
1.0  
0.8  
0.6  
0.4  
0˚  
20˚  
40˚  
60˚  
80˚  
100˚  
120˚  
Semiconductor Group  
4
1998-09-01  
LY R970, LO R970, LS R970  
Durchlaßstrom IF = f (VF)  
Forward current  
TA = 25 °C  
Relative Lichtstärke IV/IV(20 mA) = f (IF)  
Relative luminous intensity TA = 25 °C  
OHL00412  
OHL00414  
10 2  
10 1  
Ι F  
Ι V  
Ι V (20 mA)  
mA  
10 0  
10 1  
5
5
10 -1  
5
10 0  
5
10 -2  
5
yellow  
super-red  
orange  
super-red  
orange/yellow  
10 -1  
1.0  
10 -3  
-1  
0
1
2
1.4  
1.8  
2.2  
2.6  
3.0  
3.4  
V
mA  
10  
5
10  
5
10  
10  
VF  
Ι F  
Maximal zulässiger Durchlaßstrom  
Max. permissible forward current  
IF = f (TA)  
Relative Lichtstärke IV / IV(25 °C ) = f (TA)  
Relative luminous intensity  
IF = 20 mA  
OHL00418  
OHL00413  
30  
2.0  
1.6  
1.2  
0.8  
0.4  
0.0  
mA  
I F  
Ι V  
Ι V (25 ˚C)  
25  
20  
15  
10  
5
yellow  
orange  
super-red  
0
0
10 20 30 40 50 60 70 80 ˚C 100  
0
20  
40  
60  
80 ˚C 100  
TA  
TA  
Semiconductor Group  
5
1998-09-01  
LY R970, LO R970, LS R970  
Maßzeichnung  
(Maße in mm, wenn nicht anders angegeben)  
Package Outlines  
(Dimensions in mm, unless otherwise specified)  
0.8 ±0.1  
1.25 ±0.1  
0.3 ±0.1  
Kathode/  
Cathode  
mark  
GEO06987  
Semiconductor Group  
6
1998-09-01  
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