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PXFC192207FH

型号：

PXFC192207FH

品牌：

INFINEON[ Infineon ]

页数：

9 页

PDF大小：

371 K

下载PDF手册
PXFC192207FH  
Thermally-Enhanced High Power RF LDMOS FET  
220 W, 28 V, 1805 – 1990 MHz  
Description  
The PXFC192207FH is a 220-watt LDMOS FET intended for use  
in multi-standard cellular power amplifier applications in the 1805  
to 1990 MHz frequency band. Features include input and output  
matching, high gain and thermally-enhanced package with earless  
flanges. Manufactured with Infineon's advanced LDMOS process,  
this device provides excellent thermal performance and superior  
reliability.  
PXFC192207FH  
Package H-37288G-4/2  
Features  
Two-carrier WCDMA Drive-up  
VDD = 28 V,IDQ = 1600 mA,  
3GPP WCDMA signal, PAR = 8 dB,  
10 MHz carrier spacing, BW 3.84 MHz  
•
•
Broadband input and output matching  
Typical Pulsed CW performance, 1990 MHz, 28 V,  
16 µs pulse width, 10 % duty cycle, class AB  
- Output power at P  
- Efficiency = 55%  
- Gain = 20 dB  
= 220 W  
1dB  
30  
25  
20  
15  
10  
5
60  
50  
40  
30  
20  
10  
0
1930 MHz  
1960 MHz  
1990 MHz  
•
Typical single-carrier WCDMA performance, 1990  
MHz, 28 V, 9.9 dB PAR @ 0.01% CCDR  
- Output power = 50 W  
- Efficiency = 29%  
- Gain = 20 dB  
Gain  
- ACPR = –34 dBc @ 5 MHz  
•
•
Capable of handling 10:1 VSWR @28 V, 220 W  
(CW) output power  
Efficiency  
40  
Integrated ESD protection : Human Body Model,  
Class 1C (per JESD22-A114)  
0
c192207fh_g1  
30  
35  
45  
50  
55  
•
•
Low thermal resistance  
Output Power (dBm)  
Pb-free and RoHS compliant  
RF Characteristics  
Two-carrier WCDMA Specifications (tested in Infineon production test fixture)  
= 28 V, I = 1600 mA, P = 50 W avg, ƒ = 1980 MHz, ƒ = 1990 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,  
V
DD  
DQ  
OUT  
1
2
peak/average = 8 dB @ 0.01% CCDF  
Characteristic  
Linear Gain  
Symbol  
Min  
19  
Typ  
20.5  
32  
Max  
—
Unit  
dB  
G
ps  
Drain Efficiency  
D  
29  
—
%
Intermodulation Distortion  
IMD  
—
–32.5  
–29  
dBc  
All published data at T  
= 25°C unless otherwise indicated  
CASE  
ESD: Electrostatic discharge sensitive device—observe handling precautions!  
Data Sheet 1 of 9  
Rev. 04, 2014-07-15  
PXFC192207FH  
DC Characteristics  
Characteristic  
Conditions  
Symbol  
Min  
65  
—
Typ  
—
Max  
—
Unit  
V
Drain-Source Breakdown Voltage  
Drain Leakage Current  
V
GS  
= 0 V, I = 10 mA  
V(  
BR)DSS  
DS  
V
V
= 28 V, V = 0 V  
I
I
—
1
µA  
µA  
DS  
GS  
DSS  
DSS  
= 63 V, V = 0 V  
—
—
10  
—
DS  
GS  
On-State Resistance  
Operating Gate Voltage  
Gate Leakage Current  
V
GS  
= 10 V, V = 0.1 V  
R
DS(on)  
—
0.03  
2.6  
—
DS  
V
DS  
= 28 V, I  
= 1.6 A  
V
GS  
2.3  
—
2.9  
1
V
DQ  
V
GS  
= 10 V, V = 0 V  
I
GSS  
µA  
DS  
Maximum Ratings  
Parameter  
Symbol  
Value  
65  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
Operating Voltage  
V
DSS  
V
–6 to +10  
0 to +32  
225  
V
GS  
DD  
V
V
Junction Temperature  
Storage Temperature Range  
T
°C  
J
T
–65 to +150  
0.28  
°C  
STG  
Thermal Resistance (T  
= 70°C, 200 W CW)  
R
JC  
°C/W  
CASE  
Ordering Information  
Type and Version  
PXFC192207FH V3  
Order Code  
Package Description  
Shipping  
PXFC192207FHV3XWSA1  
PXFC192207FHV3R250XTMA1  
H-37288G-4/2, earless flange  
H-37288G-4/2, earless flange  
Tray  
PXFC192207FH V3 R250  
Tape & Reel, 250 pcs  
Data Sheet  
2 of 9  
Rev. 04, 2014-07-15  
PXFC192207FH  
Typical Performance (data taken in a production test fixture)  
Two-carrier WCDMA Drive-up  
VDD = 28 V, IDQ = 1600 mA,  
ƒ = 1990 MHz, 3GPP WCDMA signal,  
PAR = 8 dB, 10 MHz carrier spacing,  
BW 3.84 MHz  
Two-carrier WCDMA Drive-up  
VDD = 28 V, IDQ = 1600 mA,  
3GPP WCDMA signal, PAR = 8 dB,  
10 MHz carrier spacing, BW 3.84 MHz  
1930 IMDL  
1960 IMDL  
1990 IMDL  
1930 IMDU  
1960 IMDU  
1990 IMDU  
-5  
-15  
-25  
-35  
-45  
-55  
-65  
60  
50  
40  
30  
20  
10  
0
-10  
-15  
-20  
-25  
-30  
-35  
-40  
-45  
-50  
IMD Low  
IMD Up  
ACPR  
Efficiency  
c192207fh_g2  
c192207fh_g3  
30  
35  
40  
45  
50  
55  
30  
35  
40  
45  
50  
55  
Output Power (dBm)  
Output Power (dBm)  
Pulsed CW Performance  
IDQ = 1600 mA, VDD = 28 V  
Pulsed CW Performance  
at various VDD  
IDQ = 1600 mA, ƒ = 1990 MHz  
1990 MHz  
1960 MHz  
1930 MHz  
22  
21  
20  
19  
18  
17  
16  
60  
VDD = 24 V  
VDD = 28 V  
VDD = 32 V  
22  
21  
20  
19  
18  
17  
16  
60  
50  
40  
30  
20  
10  
0
50  
40  
30  
20  
10  
0
Gain  
Gain  
Efficiency  
Efficiency  
c192207fh_g5  
c192207fh_g4  
30  
35  
40  
45  
50  
55  
30  
35  
40  
45  
50  
55  
Output Power (dBm)  
Output Power (dBm)  
Data Sheet  
3 of 9  
Rev. 04, 2014-07-15  
PXFC192207FH  
Typical Performance (cont.)  
Small Signal, CW  
Gain & Input Return Loss  
VDD = 28 V, IDQ = 1600 mA  
30  
0
25  
-5  
Gain  
20  
15  
-10  
-15  
-20  
-25  
IRL  
10  
5
c192207fh_g6  
1700 1800 1900 2000 2100 2200 2300  
Frequency (MHz)  
See next page for broadband circuit impdedance  
Data Sheet  
4 of 9  
Rev. 04, 2014-07-15  
PXFC192207FH  
Broadband Circuit Impedance  
D
S
Z Source  
Z Load  
G
Z Source  
Z Load   
Freq  
[MHz]  
R
jX  
R
jX  
1930  
1960  
1990  
3.12  
3.11  
3.10  
–4.70  
–4.62  
–4.55  
1.15  
1.14  
1.13  
–2.80  
–2.69  
–2.58  
Load Pull Performance  
Each Side Load Pull Performance – Pulsed CW signal: 16 µs, 10% duty cycle, 28 V, 1100 mA  
P
1dB  
Max Output Power  
Max PAE  
Zs  
[]  
Freq  
[MHz]  
Zl  
[]  
Gain  
[dB]  
P
P
PAE  
[%]  
Zl  
[]  
Gain  
[dB]  
P
P
OUT  
PAE  
[%]  
OUT  
OUT  
OUT  
[dBm]  
55.1  
55.0  
54.7  
54.6  
[W]  
324  
316  
295  
288  
[dBm]  
53.4  
53.0  
53.0  
52.8  
[W]  
219  
200  
200  
191  
1805  
1880  
1930  
1990  
2.1–j3.4  
2.1–j3.3  
1.9–j3.7  
3.8–j4.1  
0.7–j2.4  
0.7–j2.5  
0.8–j2.6  
0.7–j2.8  
16.8  
17.6  
17.8  
18.4  
54.1  
54.4  
50.0  
50.8  
1.6–j1.9  
1.6–j1.9  
1.4–j2.0  
1.4–j2.1  
19.3  
20.3  
20.6  
21  
65.7  
65.0  
62.8  
61.7  
Data Sheet  
5 of 9  
Rev. 04, 2014-07-15  
PXFC192207FH  
Reference Circuit , 1930 – 1990 MHz  
R801  
R802  
C802  
R803  
C801  
RO4350, .020  
(61)  
C803  
S3  
R804  
S1  
S2  
VDD  
R102  
C204 C201  
C103  
C207  
C101  
C206  
R101  
C205  
C102  
RF_OUT  
RF_IN  
C209  
C203  
VDD  
C208 C202  
RO4350, .020  
(61)  
PXFC192207FH_IN_02  
PXFC192207FH_OUT_02  
c
1 9 2 2 0 7 f h _ C D _ 0 4 - 3 0 - 2 0 1 3  
Reference circuit assembly diagram (not to scale)*  
Data Sheet  
6 of 9  
Rev. 04, 2014-07-15  
PXFC192207FH  
Reference Circuit (cont.)  
Reference Circuit Assembly  
DUT  
PXFC192207FH  
LTN/PXFC192207FH V3  
Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, = 3.66, ƒ = 1930 – 1990 MHz  
Test Fixture Part No.  
PCB  
r
Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower  
Components Information  
Component  
Description  
Suggested Manufacturer  
P/N  
Input  
C101  
Capacitor, 10 µF  
Capacitor, 33 pF  
Capacitor, 1000 pF  
Resistor, 10   
Taiyo Yuden  
UMK325C7106MM-T  
ATC100A330JW150XB  
ECJ-1VB1H102K  
ERJ-8GEYJ100V  
ERJ-8GEYJ101V  
ERJ-3GEYJ132V  
ERJ-3GEYJ122V  
BCP56  
C102, C103  
ATC  
C801, C802, C803  
Panasonic Electronic Components  
Panasonic Electronic Components  
Panasonic Electronic Components  
Panasonic Electronic Components  
Panasonic Electronic Components  
Infineon Technologies  
R101, R102, R801  
R802  
R803  
R804  
S1  
Resistor, 100   
Resistor, 1300   
Resistor, 1200   
Transistor  
S2  
Voltage Regulator  
Potentiometer, 2k   
Texas Instruments  
LM78L05ACM  
S3  
Bourns Inc.  
3224W-1-202E  
Output  
C201, C202, C204,  
C206, C208, C209  
Capacitor, 10 µF  
Taiyo Yuden  
UMK325C7106MM-T  
C203, C207  
C205  
Capacitor, 220 µF  
Capacitor, 33 pF  
Panasonic Electronic Components  
ATC  
EEE-FP1V221AP  
ATC100A330JW150XB  
Data Sheet  
7 of 9  
Rev. 04, 2014-07-15  
PXFC192207FH  
Package Outline Specifications  
Package H-37288G-4/2  
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Diagram Notes—unless otherwise specified:  
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.  
2. Primary dimensions are mm. Alternate dimensions are inches.  
3. All tolerances ꢀ.12ꢁ ꢂ.ꢀꢀ5ꢃ unless specified otherwise.  
4. Pins: D – drain; G – gate; S – source; V – VDD.  
5. Lead thickness: ꢀ.1ꢀ + ꢀ.ꢀ51/-ꢀ.ꢀ25 mm ꢂ.ꢀꢀ4 +ꢀ.ꢀꢀ2/-ꢀ.ꢀꢀ1 inchꢃ.  
6. Gold plating thickness: 1.14 ꢀ.3ꢄ micron ꢂ45 15 microinchꢃ.  
Find the latest and most complete information about products and packaging at the Infineon Internet page  
http://www.infineon.com/rfpower  
Data Sheet  
8 of 9  
Rev. 04, 2014-07-15  
PXFC192207FH V3  
Revision History  
Revision  
Date  
Data Sheet Type  
Advance  
Page  
All  
Subjects (major changes since last revision)  
01  
02  
03  
2013-02-04  
2013-04-29  
2013-07-18  
Data Sheet reflects advance specification for product development  
Data Sheet reflects released product specifications  
Production  
All  
Production  
All  
1
2
Updated package from V1 to V2 for general release  
Updated package and revised efficiency in Two-carrier WCDMA specifications table  
Updated ordering information table  
7
Updated LTN version  
8
Updated package outline  
04  
2014-07-15  
Production  
All  
1
2
Updated package from V2 to V3 for general release  
Updated Two-carrier WCDMA specifications table  
Revised juntion temperature in Maximum Ratings table  
We Listen toYour Comments  
Any information within this document that you feel is wrong, unclear or missing at all?  
Your feedback will help us to continuously improve the quality of this document.  
Please send your proposal (including a reference to this document) to:  
highpowerRF@infineon.com  
To request other information, contact us at:  
+1 877 465 3667 (1-877-GO-LDMOS) USA  
or +1 408 776 0600 International  
Edition 2014-07-15  
Published by  
Infineon Technologies AG  
85579 Neubiberg, Germany  
© 2014 Infineon Technologies AG  
All Rights Reserved.  
Legal Disclaimer  
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.  
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the  
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,  
including without limitation, warranties of non-infringement of intellectual property rights of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices, please contact the nearest  
Infineon Technologies Office (www.infineon.com/rfpower).  
Warnings  
Due to technical requirements, components may contain dangerous substances. For information on the types in question,  
please contact the nearest Infineon Technologies Office.  
Infineon Technologies components may be used in life-support devices or systems only with the express written approval of In-  
fineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device  
or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be  
implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is  
reasonable to assume that the health of the user or other persons may be endangered.  
Data Sheet  
9 of 9  
Rev. 04, 2014-07-15  
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