PXFC192207SH
Thermally-Enhanced High Power RF LDMOS FET
220 W, 28 V, 1805 – 1990 MHz
Description
PXFC192207SH
Package H-37288G-4/2
The PXFC192207SH is a 220-watt LDMOS FET intended for
use in multi-standard cellular power amplifier applications in
the 1805 to 1990 MHz frequency band. Features include input
and output matching, high gain and thermally-enhanced pack-
age with earless flanges. Manufactured with Infineon's ad-
vanced LDMOS process, this device provides excellent thermal
performance and superior reliability.
Features
Two-carrier WCDMA Drive-up
VDD = 28 V, IDQ = 1600 mA, VGS = 2.75 V,
ƒ = 1880 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
•
•
Broadband internal input and output matching
Typical Pulsed CW performance, 1880 MHz, 28 V,
10 µs pulse width, 10% duty cycle, class AB
- Output power at P
- Efficiency = 55%
- Gain = 20 dB
= 220 W
1dB
22
21
20
19
18
17
16
15
56
48
40
32
24
16
8
Gain
•
Typical single-carrier WCDMA performance, 1880
MHz, 28 V, 10 dB PAR @ 0.01% CCDF
- Output power = 50 W
- Efficiency = 29%
- Gain = 20 dB
- ACPR = –34 dBc @5 MHz
•
Capable of handling 10:1 VSWR @28 V, 200 W
(CW) output power
Efficiency
•
•
•
Integrated ESD protection
Low thermal resistance
0
c192207sh_g1
29
33
37
41
45
49
53
Pb-free and RoHS compliant
Output Power (dBm)
RF Characteristics
Two-carrier WCDMA Specifications (tested in Infineon production test fixture)
= 28 V, I = 1600 mA, P = 50 W avg, ƒ = 1980 MHz, ƒ = 1990 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
V
DD
DQ
OUT
1
2
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Gain
Symbol
Min
19
Typ
20
Max
—
Unit
dB
G
ps
Drain Efficiency
Intermodulation Distortion
hD
29
30.5
–32
—
%
IMD
—
–29
dBc
All published data at T
= 25°C unless otherwise indicated
CASE
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet 1 of 8
Rev. 02, 2014-10-31
