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PYA28HC256E-90LM

型号:

PYA28HC256E-90LM

品牌:

PYRAMID[ PYRAMID SEMICONDUCTOR CORPORATION ]

页数:

15 页

PDF大小:

798 K

PYA28HC256  
HIGH SPEED 32K x 8 EEPROM  
FEATURES  
Access Times of 70, 90 and 120ns  
Single 5V±10% Power Supply  
Software Data Protection  
CMOS & TTL Compatible Inputs and Outputs  
Endurance:  
Simple Byte and Page Write  
- 10,000 Write Cycles  
- 100,000 Write Cycles (optional)  
Low Power CMOS:  
- 80 mA Active Current  
- 3 mA Standby Current  
Data Retention: 10 Years  
Available in the following package:  
– 28-Pin 600 mil Ceramic DIP  
Fast Write Cycle Times  
– 32-Pin Ceramic LCC (450x550 mils)  
DESCRIPTIOꢀ  
ThePYA28HC256isa5Volt32Kx8EEPROM. Thedevice  
supports 64-byte page write operation. ThePYA28HC256  
features DATA and Toggle Bit Polling as well as a system  
software scheme used to indicate early completion of a  
Write Cycle. The device also includes user-optional soft-  
ware data protection. Data Retention is 10 Years. The  
device is available in a 28-Pin 600 mil wide Ceramic DIP  
and 32-Pin LCC.  
FUꢀCTIOꢀAL BLOCꢁ DIAꢂRAM  
PIꢀ COꢀFIꢂURATIOꢀ  
DIP (C5-1)  
LCC (L6)  
Document # EEPROM106 REV 03  
Revised October 2014  
PYA28HC256 - HIGH SPEED 32K x 8 EEPROM  
OPERATIOꢀ  
infinitely wide, so long as the host continues to access the  
device within the byte load cycle time of 150µs.  
READ  
Read operations are initiated by both OE and CE LOW.  
The read operation is terminated by either CE or OE re-  
turning HIGH. This two line control architecture elimi-  
nates bus contention in a system environment. The data  
bus will be in a high impedance state when either OE or  
CE is HIGH.  
WRITE STATUS BITS  
The PYA28HC256 provides the user two write operation  
status bits. These can be used to optimize a system write  
cycle time. The status bits are mapped onto the I/O bus  
as shown below.  
BYTE WRITE  
DATA POLLIꢀꢂ  
Write operations are initiated when both CE and WE are  
LOW and OE is HIGH. The PYA28HC256 supports both  
a CE and WE controlled write cycle. That is, the address  
is latched by the falling edge of either CE or WE, which-  
ever occurs last. Similarly, the data is latched internally  
by the rising edge of either CE or WE, whichever occurs  
first. A byte write operation, once initiated, will automati-  
cally continue to completion.  
The PYA28HC256 features DATA Polling as a meth-  
od to indicate to the host system that the byte write or  
page write cycle has completed. DATA Polling allows a  
simple bit test operation to determine the status of the  
PYA28HC256, eliminating additional interrupts or external  
hardware. During the internal programming cycle, any at-  
tempt to read the last byte written will produce the comple-  
ment of that data on I/O7 (i.e., write data=0xxx xxxx, read  
data=1xxx xxxx). Once the programming cycle is com-  
plete, I/O7 will reflect true data. Note: If the PYA28HC256  
is in the protected state and an illegal write operation is  
attempted, DATA Polling will not operate.  
PAꢂE WRITE  
The page write feature of the PYA28HC256 allows 1  
to 64 bytes of data to be consecutively written to the  
PYA28HC256 during a single internal programming cycle.  
The host can fetch data from another device within the  
system during a page write operation (change the source  
address), but the page address (A6 through A14) for each  
subsequent valid write cycle to the part during this opera-  
tion must be the same as the initial page address. The  
bytes within the page to be written are specified with the  
A0 through A5 inputs.  
TOꢂꢂLE BIT  
The PYA28HC256 also provides another method for de-  
termining when the internal write cycle is complete. Dur-  
ing the internal programming cycle, I/O6 will toggle from  
HIGH to LOW and LOW to HIGH on subsequent attempts  
to read the device. When the internal cycle is complete  
the toggling will cease and the device will be accessible  
for addtional read or write operations.  
The page write mode can be initiated during any write  
operation. Following the initial byte write cycle, the host  
can write an additional 1 to 63 bytes in the same man-  
ner as the first byte was written. Each successive byte  
load cycle, started by the WE HIGH to LOW transition,  
must begin within 150µs of the falling edge of the pre-  
ceding WE. If a subsequent WE HIGH to LOW transition  
is not detected within 150µs, the internal automatic pro-  
gramming cycle will commence. There is no page write  
window limitation. Effectively, the page write window is  
DATA PROTECTIOꢀ  
Pyramid has incorporated both hardware and software  
features that will protect the memory against inadvertent  
writes during transitions of the host system power sup-  
ply.  
Hardware Protection  
Hardware features protect against inadvertent writes to  
the PYA28C256 in the following ways: (a) VCC sense - if  
VCC is below 3.8V (typical) the write function is inhibited;  
(b) VCC power-on delay - once VCC has reached 3.8V  
the device will automatically time out 5 ms (typical) before  
allowing a write; (c) write inhibit - holding any one of OE  
low, CE high or WE high inhibits write cycles; and (d)  
noise filter - pulses of less than 15 ns (typical) on the WE  
or CE inputs will not initiate a write cycle.  
Software Data Protection  
A software controlled data protection feature has been  
implemented on the PYA28C256. When enabled, the  
software data protection (SDP), will prevent inadvertent  
writes. The SDP feature may be enabled or disabled by  
the user; the PYA28C256 is shipped from Pyramid with  
SDP disabled.  
SDP is enabled by the host system issuing a series of  
Document # EEPROM106 REV 03  
Page 2  
PYA28HC256 - HIGH SPEED 32K x 8 EEPROM  
three write commands; three specific bytes of data are  
written to the three specific addresses (refer to "Software  
Data Protection" algorithm). After writing the 3-byte com-  
mand sequence and after tWC the entire PYA28C256  
will be protected against inadvertent write operations. It  
should be noted, that once protected the host may still  
perform a byte or page write to the PYA28C256. This  
is done by preceding the data to be written by the same  
3-byte command sequence used to enable SDP.  
Once set, SDP will remain active unless the disable com-  
mand sequence is issued. Power transitions do not dis-  
able SDP and SDP will protect the PYA28C256 during  
power-up and power-down conditions. All command se-  
quences must conform to the page write timing specifi-  
cations. The data in the enable and disable command  
sequences is not written to the device and the memory  
addresses used in the sequence may be written with data  
in either a byte or page write operation.  
After setting SDP, any attempt to write to the device with-  
out the 3-byte command sequence will start the internal  
write timers. No data will be written to the device; howev-  
er, for the duration of tWC, read operations will effectively  
be polling operations.  
DEVICE IDEꢀTIFICATIOꢀ  
An extra 64 bytes of EEPROM memory are available to  
the user for device identification. By raising A9 to 12V  
± 0.5V and using address locations 7FC0H to 7FFFH  
the additional bytes may be written to or read from in the  
same manner as the regular memory array.  
OPTIOꢀAL CHIP ERASE MODE  
The entire device can be erased using a 6-byte software  
code. Please see "Software Chip Erase" application note  
at the end of this datasheet for details.  
Document # EEPROM106 REV 03  
Page 3  
PYA28HC256 - HIGH SPEED 32K x 8 EEPROM  
MAꢃIMUM RATIꢀꢂS(1)  
RECOMMEꢀDED OPERATIꢀꢂ COꢀDITIOꢀS  
ꢂrade(2)  
Ambient Temp  
ꢂꢀD  
VCC  
Sym Parameter  
Value  
Unit  
Power Supply Pin with  
VCC  
Military  
-55°C to +125°C  
0V  
5.0V ± 10%  
-0.3 to +6.25  
V
Respect to GND  
Terminal Voltage with  
VTERM Respect to GND (up to  
6.25V)  
-0.5 to +6.25  
V
CAPACITAꢀCES(4)  
TA  
Operating Temperature  
-55 to +125  
-55 to +125  
-65 to +150  
1.0  
°C  
°C  
°C  
W
(VCC = 5.0V, TA = 25°C, f = 1.0MHz)  
TBIAS Temperature Under Bias  
TSTG Storage Temperature  
Sym Parameter  
Conditions Typ Unit  
PT  
Power Dissipation  
CIN  
Input Capacitance  
Output Capacitance  
VIN = 0V  
10  
10  
pF  
pF  
IOUT DC Output Current  
50  
mA  
COUT  
VOUT = 0V  
DC ELECTRICAL CHARACTERISTICS  
(Over Recommended Operating Temperature & Supply Voltage)(2)  
Sym Parameter  
Test Conditions  
Min  
Max  
Unit  
V
VIH Input High Voltage  
2.0  
VCC + 0.3  
0.8  
VIL Input Low Voltage  
-0.5(3)  
V
VHC CMOS Input High Voltage  
VLC CMOS Input Low Voltage  
VOL Output Low Voltage (TTL Load)  
VOH Output High Voltage (TTL Load)  
VCC - 0.2 VCC + 0.5  
V
-0.5(3)  
0.2  
V
IOL = +2.1 mA, VCC = Min  
0.45  
V
IOH = -0.4 mA, VCC = Min  
2.4  
-10  
V
VCC = Max  
ILI  
Input Leakage Current  
+10  
+10  
µA  
µA  
VIN = GND to VCC  
VCC = Max, CE = VIH,  
VOUT = GND to VCC  
-10  
ILO Output Leakage Current  
CE ≥ VIH, OE = VIL,  
VCC = Max,  
90, 120ns  
3
mA  
mA  
ISB Standby Power Supply Current (TTL Input Levels)  
70ns  
60  
f = Max, Outputs Open  
CE ≥ VHC,  
VCC = Max,  
ISB1 Standby Power Supply Current (CMOS Input Levels)  
300  
80  
µA  
f = 0, Outputs Open,  
VIN ≤ VLC or VIN ≥ VHC  
CE = OE = VIL,  
WE = VIH,  
ICC Supply Current  
mA  
All I/O's = Open,  
Inputs = VCC = 5.5V  
ꢀotes:  
1. Stresses greater than those listed under MAxIMꢀM RAꢁINGS may  
cause permanent damage to the device. This is a stress rating only  
and functional operation of the device at these or any other conditions  
above those indicated in the operational sections of this specification  
is not implied. Exposure to MAꢀIMUM rating conditions for extended  
periods may affect reliability.  
2. Extended temperature operation guaranteed with 400 linear feet per  
minute of air flow.  
3.TransientinputswithVIL andIIL notmorenegativethan-3.0Vand-100mA,  
respectively, are permissible for pulse widths up to 20ns.  
4. This parameter is sampled and not 100% tested.  
Document # EEPROM106 REV 03  
Page 4  
PYA28HC256 - HIGH SPEED 32K x 8 EEPROM  
POWER-UP TIMIꢀꢂ  
Symbol  
Parameter  
Max  
100  
5
Unit  
µs  
tPUR  
Power-up to Read operation  
Power-up to Write operation  
tPUW  
ms  
AC ELECTRICAL CHARACTERISTICS—READ CYCLE  
(VCC = 5V ± 10%, All Temperature Ranges)(2)  
-70  
-90  
-120  
Sym Parameter  
Unit  
Min  
Max  
Min  
Max  
Min  
Max  
tAVAV  
Read Cycle Time  
70  
90  
120  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tAVQV Address Access Time  
70  
70  
35  
90  
90  
40  
120  
120  
50  
tELQV Chip Enable Access Time  
tOLQV Output Enable Access Time  
tELQꢀ Chip Enable to Output in Low Z  
tEHQZ Chip Disable to to Output in High Z  
tOLQꢀ Output Enable to Output in Low Z  
tOHQZ Output Disable to Output in High Z  
tAVQꢀ Output Hold from Address Change  
0
0
0
0
0
0
0
0
0
35  
35  
40  
40  
50  
50  
TIMIꢀꢂ WAVEFORM OF READ CYCLE  
Document # EEPROM106 REV 03  
Page 5  
PYA28HC256 - HIGH SPEED 32K x 8 EEPROM  
AC CHARACTERISTICS—WRITE CYCLE  
(VCC = 5V ± 10%, All Temperature Ranges)(2)  
70 / 90 / 120  
Symbol  
Parameter  
Unit  
Min  
Max  
10  
tWHWL1  
tEHEL1  
Write Cycle Time  
Address Setup Time  
Address Hold Time  
Write Setup Time  
Write Hold Time  
OE Setup Time  
ms  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
µs  
µs  
µs  
µs  
µs  
tAVEL  
tAVWL  
0
50  
0
tELAꢀ  
tWLAꢀ  
tWLEL  
tELWL  
tWHEH  
0
tOHEL  
tOHWL  
10  
10  
100  
50  
0
tWHOL  
OE Hold Time  
tELEH  
tWLWH  
WE Pulse Width  
Data Setup Time  
Data Hold Time  
Byte Load Cycle Time  
CE Setup Time  
tDVEH  
tDVWH  
tEHDꢀ  
tWHDꢀ  
tEHEL2  
tWHWL2  
0.2  
1
150  
tELWL  
tOVHWL  
tEHWH  
tWHOH  
Output Setup Time  
CE Hold Time  
1
1
OE Hold Time  
1
Document # EEPROM106 REV 03  
Page 6  
PYA28HC256 - HIGH SPEED 32K x 8 EEPROM  
TIMIꢀꢂ WAVEFORM OF BYTE WRITE CYCLE (CE COꢀTROLLED)  
TIMIꢀꢂ WAVEFORM OF BYTE WRITE CYCLE (WE COꢀTROLLED)  
Document # EEPROM106 REV 03  
Page 7  
PYA28HC256 - HIGH SPEED 32K x 8 EEPROM  
TIMIꢀꢂ WAVEFORM OF PAꢂE WRITE CYCLE  
ꢀOTES:  
• For each successive write within the page write operation, A6-A14 should be the same. Otherwise, writes to an un-  
known address could occur.  
• Between successive byte writes within a page write operation, OE can be strobed LOW. For example, this can be  
done with CE and WE HIGH to fetch data from another memory device within the system for the next write. Alterna-  
tively, this can be done with WE HIGH and CE LOW, effectively performing a polling operation.  
• ꢁhe timings shown above are unique to page write operations. Individual byte load operations within the page write  
must conform to either the CE or WE controlled write cycle timing.  
Document # EEPROM106 REV 03  
Page 8  
PYA28HC256 - HIGH SPEED 32K x 8 EEPROM  
WRITE SEQUEꢀCE FOR SOFTWARE DATA  
PROTECTIOꢀ  
SOFTWARE SEQUEꢀCE TO DE-ACTIVATE  
SOFTWARE DATA PROTECTIOꢀ  
Document # EEPROM106 REV 03  
Page 9  
PYA28HC256 - HIGH SPEED 32K x 8 EEPROM  
AC TEST COꢀDITIOꢀS  
Input Pulse Levels  
TRUTH TABLE  
Mode  
GND to 3.0V  
10ns  
CE  
L
OE  
L
WE  
H
I/O  
DOUT  
DIN  
Input Rise and Fall Times  
Input Timing Reference Level  
Output Timing Reference Level  
Output Load  
Read  
1.5V  
Write  
L
H
L
L
1.5V  
Write Inhibit  
Write Inhibit  
Standby  
H
See Figure 1  
H
High Z  
High Z  
Output Disable  
H
Figure 1. Output Load  
Document # EEPROM106 REV 03  
Page 10  
PYA28HC256 - HIGH SPEED 32K x 8 EEPROM  
APPLICATIOꢀ ꢀOTE - SOFTWARE CHIP ERASE  
The entire device can be erased at one time by using a 6-byte software code. The software chip erase code consists of  
6-byte load commands to specific address locations with specific data patterns. Once the code has been entered, the  
device will set each byte to the high state (FFH). After the software chip erase has been initiated, the device will inter-  
nally time the erase operation so that no external clocks are required. The maximum time required to erase the whole  
chip is tEC (20 ms). The software data protection is still enabled even after the software chip erase is performed.  
CHIP ERASE CYCLE CHARACTERISTICS  
Symbol Parameter  
tEC  
Chip Erase Cycle Time  
20 ms Max  
CHIP ERASE SOFTWARE ALꢂORITHM(1)(3)  
ꢀotes:  
1. Data Format: (Heꢂ); Address Format: (Heꢂ).  
2. Afterloadingthe6-bytecode,nobyteloadsareallowed  
untilthecompletionoftheerasecycle. Theerasecycle  
will time itself to completion in 20 ms (max).  
3. ꢁhe flow diagram shown is for a ꢂ8 part. For a ꢂ16 part,  
the data should be 16 bits long (e.g., the data to be  
loaded should be AAAA for step 1 in the algorithm).  
CHIP ERASE CYCLE WAVEFORMS  
1. OE must be high only when WE and CE are both low.  
Document # EEPROM106 REV 03  
Page 11  
PYA28HC256 - HIGH SPEED 32K x 8 EEPROM  
APPLICATIOꢀ ꢀOTE - SOFTWARE CHIP ERASE  
The entire device can be erased at one time by using a 6-byte software code. The software chip erase code consists of  
6-byte load commands to specific address locations with specific data patterns. Once the code has been entered, the  
device will set each byte to the high state (FFH). After the software chip erase has been initiated, the device will inter-  
nally time the erase operation so that no external clocks are required. The maximum time required to erase the whole  
chip is tEC (20 ms). The software data protection is still enabled even after the software chip erase is performed.  
CHIP ERASE CYCLE CHARACTERISTICS  
Symbol Parameter  
tEC  
Chip Erase Cycle Time  
20 ms Max  
CHIP ERASE SOFTWARE ALꢂORITHM(1)(3)  
ꢀotes:  
1. Data Format: (Heꢂ); Address Format: (Heꢂ).  
2. Afterloadingthe6-bytecode,nobyteloadsare  
alloweduntilthecompletionoftheerasecycle.  
The erase cycle will time itself to completion  
in 20 ms (max).  
3. ꢁhe flow diagram shown is for a ꢂ8 part. For a  
x16 part, the data should be 16 bits long (e.g.,  
the data to be loaded should beAAAAfor step  
1 in the algorithm).  
CHIP ERASE CYCLE WAVEFORMS  
1. OE must be high only when WE and CE are both low.  
Document # EEPROM106 REV 03  
Page 12  
PYA28HC256 - HIGH SPEED 32K x 8 EEPROM  
ORDERIꢀꢂ IꢀFORMATIOꢀ  
[1] Parts are not MIL-STD-883 compliant. Parts are processed per Test Method 5004.  
Document # EEPROM106 REV 03  
Page 13  
PYA28HC256 - HIGH SPEED 32K x 8 EEPROM  
SIDE BRAZED DUAL Iꢀ-LIꢀE PACꢁAꢂE (600 mils)  
Pkg #  
C5-1  
# Pins  
28 (600 mil)  
Symbol  
Min  
-
Max  
A
b
0.232  
0.026  
0.065  
0.018  
1.490  
0.610  
0.014  
0.045  
0.008  
-
b2  
C
D
E
0.500  
eA  
e
0.600 BSC  
0.100 BSC  
L
0.125  
0.200  
Q
0.015  
0.005  
0.005  
0.060  
S1  
S2  
-
-
RECTAꢀꢂULAR LEADLESS CHIP CARRIER  
Pkg #  
# Pins  
Symbol  
A
L6  
32  
Min  
Max  
0.060  
0.050  
0.022  
0.442  
0.075  
0.065  
0.028  
0.458  
A1  
B1  
D
D1  
D2  
D3  
E
0.300 BSC  
0.150 BSC  
-
0.458  
0.560  
0.540  
E1  
E2  
E3  
e
0.400 BSC  
0.200 BSC  
-
0.558  
0.050 BSC  
0.040 REF  
0.020 REF  
h
j
L
0.045  
0.055  
0.055  
0.095  
L1  
0.045  
0.075  
L2  
ND  
NE  
7
9
Document # EEPROM106 REV 03  
Page 14  
PYA28HC256 - HIGH SPEED 32K x 8 EEPROM  
REVISIOꢀS  
DOCUMEꢀT ꢀUMBER EEPROM106  
DOCUMEꢀT TITLE  
PYA28HC256 - HIGH SPEED 32K x 8 EEPROM  
REV ISSUE DATE  
ORIꢂIꢀATOR DESCRIPTIOꢀ OF CHAꢀꢂE  
OR  
A
Jan 2011  
Nov 2011  
Jul 2014  
Oct 2014  
JDB  
JDB  
JDB  
JDB  
New Data Sheet  
Updated Ordering Info  
02  
03  
Added Software Chip Erase App Note  
Replaced MIL-SꢁD-883 Class B process flow with est Method 5004  
Document # EEPROM106 REV 03  
Page 15  
厂商 型号 描述 页数 下载

PYRAMID

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PYRAMID

PYA28C010-12CWM [ Access Times of 120, 150, 200, and 250ns Single 5V±10% Power Supply ] 15 页

PYRAMID

PYA28C010-12CWMB [ Access Times of 120, 150, 200, and 250ns Single 5V±10% Power Supply ] 15 页

PYRAMID

PYA28C010-12FSM [ Access Times of 120, 150, 200, and 250ns Single 5V±10% Power Supply ] 15 页

PYRAMID

PYA28C010-12FSMB [ Access Times of 120, 150, 200, and 250ns Single 5V±10% Power Supply ] 15 页

PYRAMID

PYA28C010-12L32M [ Access Times of 120, 150, 200, and 250ns Single 5V±10% Power Supply ] 15 页

PYRAMID

PYA28C010-12L32MB [ Access Times of 120, 150, 200, and 250ns Single 5V±10% Power Supply ] 15 页

PYRAMID

PYA28C010-12LM [ Access Times of 120, 150, 200, and 250ns Single 5V±10% Power Supply ] 15 页

PYRAMID

PYA28C010-12LMB [ Access Times of 120, 150, 200, and 250ns Single 5V±10% Power Supply ] 15 页

PYRAMID

PYA28C010-15CWM [ Access Times of 120, 150, 200, and 250ns Single 5V±10% Power Supply ] 15 页

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