5N70K-MT
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
VGS =0V, ID = 250μA
700
V
VDS =700V, VGS = 0V
VGS =30V, VDS = 0V
VGS =-30V, VDS = 0V
1
μA
Forward
Reverse
100
-100
Gate-Source Leakage Current
IGSS
nA
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID =250μA, Referenced to 25°C
0.6
V/°C
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-State Resistance
DYNAMIC CHARACTERISTICS
Input Capacitance
VGS(TH)
RDS(ON)
VDS =VGS, ID = 250μA
2.0
4.0
V
VGS =10V, ID = 2.5A
1.86 2.4
Ω
CISS
COSS
CRSS
515 670 pF
55 72 pF
6.5 8.5 pF
VDS = 25V, VGS = 0V,
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
tR
tD(OFF)
tF
50
40
ns
ns
Turn-On Rise Time
VDD = 30V, ID =0.5A,
RG = 25Ω (Note 1, 2)
Turn-Off Delay Time
180
52
ns
Turn-Off Fall Time
ns
Total Gate Charge
QG
18
23
nC
nC
nC
V
V
DS = 50 V, ID = 1.3A,
GS = 10 V (Note 1, 2)
Gate-Source Charge
QGS
QGD
6.7
3.9
Gate-Drain Charge
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Drain-Source Diode Forward Voltage
Maximum Continuous Drain-Source Diode
Forward Current
VSD
VGS = 0 V, IS = 5A
1.4
5
V
A
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
20
A
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
4 of 7
QW-R502-B33.D
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