5N40K-MT
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
BVDSS
ID=250µA, VGS=0V
400
V
△BVDSS/△TJ Reference to 25°C, ID=250µA
IDSS VDS=400V, VGS=0V
GS=+30V, VDS=0V
0.4
V/°C
µA
Drain-Source Leakage Current
1
Forward
Reverse
V
+100 nA
-100 nA
Gate- Source Leakage Current
IGSS
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=2.5A
2.0
4.0
0.65 1.2
V
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
ꢀ
CISS
COSS
CRSS
710 910 pF
88 118 pF
Output Capacitance
VGS=0V, VDS=25V, f=1.0MHz
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Turn-ON Delay Time
Rise Time
65
75
pF
tD(ON)
tR
tD(OFF)
tF
48
60
ns
54 100 ns
135 110 ns
48 105 ns
VDD = 30V, ID = 0.5A, RG = 25ꢀ
(Note 1, 2)
Turn-OFF Delay Time
Fall-Time
Total Gate Charge
QG
22
8
26
nC
nC
nC
VDS= 50V, ID= 1.3A, VGS= 10 V
(Note 1, 2)
Gate to Source Charge
Gate to Drain Charge
QGS
QGD
6
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
IS
5
A
A
V
ISM
VSD
20
1.4
IS=5A, VGS=0V
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
4 of 7
QW-R205-050.A
www.unisonic.com.tw
