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NX8501AG-BA

型号:

NX8501AG-BA

描述:

1 510 nm的光纤通信的InGaAsP应变MQW DC- PBH激光二极管模块[ 1 510 nm OPTICAL FIBER COMMUNICATIONS InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE ]

品牌:

NEC[ NEC ]

页数:

12 页

PDF大小:

98 K

DATA SHEET  
LASER DIODE  
NX8501 Series  
1 510 nm OPTICAL FIBER COMMUNICATIONS  
InGaAsP STRAINED MQW DC-PBH LASER DIODE MODULE  
DESCRIPTION  
The NX8501 Series is a 1 510 nm phase-shifted DFB (Distributed Feed-Back) laser diode with single mode fiber.  
The Multiple Quantum Well (MQW) structure is adopted to achieve stable dynamic single longitudinal mode operation  
over wide temperature range of 0 to +65 °C.  
It is designed for on-line monitoring of dense WDM fiber-optic networks.  
FEATURES  
Peak wavelength  
λp = 1 510 nm  
Output power  
Pf = 2.0 mW  
Low threshold current  
Ith = 20 mA @ TC = 25 °C  
TC = 0 to +65 °C  
Wide operating temperature range  
InGaAs monitor PIN-PD  
Based on Bellcore TA-NWT-000983  
PACKAGE DIMENSIONS  
in millimeters  
NX8501AC  
NX8501BC  
NX8501CC  
Optical Fiber  
SM-9/125  
Length: 1 m  
Optical Fiber  
SM-9/125  
Length: 1 m  
Optical Fiber  
SM-9/125  
0.9  
0.9  
0.9  
3.2±0.25  
7±0.2  
3.2±0.25  
7±0.2  
3.2±0.25  
Length: 1 m  
7±0.2  
4– 0.45  
±0.05  
0.45±0.05  
0.45±0.05  
6±1.0  
12.7±0.2  
17.0±0.2  
6±0.1  
PIN CONNECTIONS  
P.C.D. =  
2
PIN CONNECTIONS  
PIN CONNECTIONS  
2
2– 2.5  
PD  
PD  
LD  
PD  
4
3
4
3
2
P.C.D. =  
2
P.C.D. =  
2
2
4
3
2
4
3
2
1
1
3
3
1
2
1
4
1
1
φ
LD  
LD  
Case  
4
12±0.15  
16.0  
Case  
Case  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. P13854EJ3V0DS00 (3rd edition)  
Date Published March 1999 NS CP(K)  
Printed in Japan  
The mark shows major revised points.  
1998, 1999  
©
NX8501 Series  
OPTICAL FIBER DIMENSIONS  
in millimeters  
-BA: FC-PC connector  
-CA: SC-PC connector  
φ900 µm Nylon pipe  
φ900 µm Nylon pipe  
φ
250  
µ
m Corning SMF-28  
267±10  
10  
1 000 MIN.  
Nylon pipe  
Cave  
Primary coat  
φ9 µm core  
125  
250  
500  
900  
(µm)  
2
Data Sheet P13854EJ3V0DS00  
NX8501 Series  
ORDERING INFORMATION  
Part Number  
NX8501AC  
Available Connector  
Flange Type  
No Flange  
Fiber Type  
Without Connector  
φ250 µm Corning  
SMF-28 with loose tube*1  
NX8501AC-BA  
NX8501AC-CA  
NX8501BC  
With FC-PC Connector  
With SC-PC Connector  
Without Connector  
Flat Mount Flange  
Vertical Flange  
No Flange  
NX8501BC-BA  
NX8501BC-CA  
NX8501CC  
With FC-PC Connector  
With SC-PC Connector  
Without Connector  
NX8501CC-BA  
NX8501CC-CA  
NX8501AG  
With FC-PC Connector  
With SC-PC Connector  
Without Connector  
Standard SMF  
NX8501AG-BA  
NX8501AG-CA  
NX8501BG  
With FC-PC Connector  
With SC-PC Connector  
Without Connector  
Flat Mount Flange  
Vertical Flange  
NX8501BG-BA  
NX8501BG-CA  
NX8501CG  
With FC-PC Connector  
With SC-PC Connector  
Without Connector  
NX8501CG-BA  
NX8501CG-CA  
With FC-PC Connector  
With SC-PC Connector  
*1 Please refer to OPTICAL FIBER DIMENSIONS.  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise specified)  
Parameter  
Optical Output Power from Fiber  
Forward Current of LD  
Symbol  
Pf  
Ratings  
5
Unit  
mW  
mA  
V
IF  
200  
Reverse Voltage of LD  
VR  
2.0  
Forward Current of PD  
IF  
10  
mA  
V
Reverse Voltage of PD  
VR  
20  
Operating Case Temperature  
Storage Temperature  
TC  
0 to +65  
40 to +85  
260  
°C  
Tstg  
Tsld  
°C  
Lead Soldering Temperature (10 s)  
°C  
3
Data Sheet P13854EJ3V0DS00  
NX8501 Series  
ELECTRO-OPTICAL CHARACTERISTICS (TC = 0 to +65 °C, unless otherwise specified)  
Parameter  
Forward Voltage  
Symbol  
Conditions  
Pf = 2.0 mW, TC = 25 °C  
Pf = 2.0 mW  
MIN.  
TYP.  
1.6  
MAX.  
2.0  
Unit  
V
VF  
Iop  
Ith  
Operating Current  
80  
100  
30  
mA  
mA  
W/A  
nm  
dB  
Threshold Current  
Pf = 0.2 to 1.0 mW, TC = 25 °C  
Pf = 2.0 mW  
20  
Differential Efficiency from Fiber  
Peak Emission Wavelength  
Side Mode Suppression Ratio  
Spectral Line Width  
Relative Intensity Noise  
Rise Time  
ηd  
λp  
0.04  
1 500  
30  
0.08  
1 510  
35  
Pf = 2.0 mW  
1 520  
SMSR Pf = 2.0 mW  
ν  
RIN  
tr  
Pf = 2.0 mW, 3 dB down, TC = 25 °C  
2
10  
150  
0.5  
MHz  
dB/Hz  
ns  
Pf = 2.0 mW, TC = 25 °C  
155  
0.3  
10-90 %, TC = 25 °C, Pf = 2.0 mW  
90-10 %, TC = 25 °C, Pf = 2.0 mW  
VR = 5 V, Pf = 2.0 mW, TC = 25 °C  
VR = 5 V, TC = 25 °C  
Fall Time  
tf  
0.3  
0.5  
ns  
Monitor Current  
Im  
100  
1 000  
2 000  
10  
µA  
Monitor Dark Current  
Tracking Error  
ID  
nA  
γ*1  
Im = const. (@ Pf = 2.0 mW, TC = 25 °C)  
1.0  
1.0  
dB  
Pf  
*1 γ = 10 log  
2.0 mW  
P
f
TC = 25 ˚C  
(mW)  
2.0  
TC = 0 to +65 ˚C  
P
f
0
I
m
I
m
(@ P (25 ˚C) = 2.0 mW)  
f
4
Data Sheet P13854EJ3V0DS00  
NX8501 Series  
TYPICAL CHARACTERISTICS (TC = 25 °C, unless otherwise specified)  
OUTPUT POWER FROM FIBER vs.  
FORWARD CURRENT  
OPERATING CURRENT AND THRESHOLD  
CURRENT vs. CASE TEMPERATURE  
60  
50  
40  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
T = 0 ˚C  
C
I
op@P = 2.0 mW  
f
25 ˚C  
30  
20  
10  
0
65 ˚C  
I
th  
0
10  
20  
30  
40  
(mA)  
50  
60  
–10  
0
10  
20  
30  
40  
50  
60  
70  
Forward Current I  
F
Case Temperature T  
C
(˚C)  
TEMPERATURE DEPENDENCE OF  
DIFFERENTIAL EFFICIENCY FROM FIBER  
FORWARD CURRENT vs.  
FORWARD VOLTAGE  
0.20  
50  
40  
30  
20  
10  
η
0.16  
0.12  
0.08  
0.04  
0
–10  
0
10  
20  
30  
40  
50  
60  
70  
0
0.5  
1.0  
1.5  
(V)  
2.0  
Case Temperature T  
C
(˚C)  
Forward Voltage V  
F
OUTPUT POWER FROM FIBER vs.  
LD MONITOR CURRENT  
LONGITUDINAL MODE FROM FIBER  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
–10  
–20  
–30  
–40  
–50  
–60  
–70  
0
0.5  
1.0  
(mA)  
1.5  
1 500  
1 510  
1 520  
LD Monitor Current I  
m
Wavelength λ (nm)  
5
Data Sheet P13854EJ3V0DS00  
NX8501 Series  
TEMPERATURE DEPENDENCE  
OF WAVELENGTH  
1 516  
1 514  
1 512  
1 510  
1 508  
1 506  
1 504  
–10  
0
10  
20  
30  
40  
50  
60  
70  
Case Temperature T  
C
(˚C)  
Remark The graphs indicate nominal characteristics.  
6
Data Sheet P13854EJ3V0DS00  
NX8501 Series  
LD FAMILY FOR DENSE WDM APPLICATION  
Absolute Maximum Ratings  
Typical Characteristics  
λC  
(nm)  
TC  
(°C)  
Tstg  
(°C)  
Ith  
(mA)  
Pf  
(mW)  
Part Number  
Description  
Package  
TYP.  
40  
MIN.  
90  
TYP.  
NDL7540PA  
20 to +65  
20 to +65  
40 to +85  
40 to +85  
1 480  
1 480 nm pump LD  
module  
BFY  
BFY  
NX7460LE*1  
25  
120  
1 480  
1 480 nm pump LD  
module  
NX8501 Series  
NX8561JC*1  
NX7660JC*1  
NDL7910P  
0 to +65  
0 to +65  
40 to +85  
40 to +85  
40 to +85  
40 to +85  
20  
20  
15  
7
2
3
1 510  
1 510  
1 625  
1 550*2  
Telemetry  
Telemetry  
Telemetry  
Coaxial  
DIP  
20 to +65  
20 to +70  
5
DIP  
0.5  
2.5 G EA modulator  
integrated module  
BFY  
1 550*2  
ITU-T*3  
NX8562LB  
NX8563LB  
20 to +65  
20 to +65  
40 to +85  
40 to +85  
20  
20  
20  
10  
1 550 CW LD module BFY  
1 550 CW LD module BFY  
*1 Under development  
*2 Wavelength selectable for ITU-T standards upon request.  
*3 Wavelength selectable for ITU-T standards.  
7
Data Sheet P13854EJ3V0DS00  
NX8501 Series  
REFERENCE  
Document Name  
Document No.  
C11159E  
NEC semiconductor device reliability/quality control system  
Quality grades on NEC semiconductor devices  
Semiconductor device mounting technology manual  
Semiconductor selection guide  
C11531E  
C10535E  
X10679E  
8
Data Sheet P13854EJ3V0DS00  
NX8501 Series  
[MEMO]  
9
Data Sheet P13854EJ3V0DS00  
NX8501 Series  
[MEMO]  
10  
Data Sheet P13854EJ3V0DS00  
NX8501 Series  
CAUTION  
Within this device there exists GaAs (Gallium Arsenide) material which is a  
harmful substance if ingested. Please do not under any circumstances break the  
hermetic seal.  
NEC Corporation  
NEC Building, 7-1, Shiba 5-chome,  
SEMICONDUCTOR LASER  
Minato-ku, Tokyo 108-01, Japan  
DANGER  
INVISIBLE LASER RADIATION  
AVOID DIRECT EXPOSURE TO BEAM  
Type number:  
Manufactured:  
Serial Number:  
This product conforms to FDA  
AVOID EXPOSURE-Invisible  
OUTPUT POWER  
WAVELENGTH  
mW MAX  
nm  
regulations as applicable  
to standards 21 CFR Chapter 1.  
Subchapter J.  
Laser Radiation is emitted from  
this aperture  
CLASS lllb LASER PRODUCT  
11  
Data Sheet P13854EJ3V0DS00  
NX8501 Series  
The export of this product from Japan is prohibited without governmental license. To export or re-export this product from  
a country other than Japan may also be prohibited without a license from that country. Please call an NEC sales  
representative.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
No part of this document may be copied or reproduced in any form or by any means without the prior written  
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in  
this document.  
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property  
rights of third parties by or arising from use of a device described herein or any other liability arising from use  
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other  
intellectual property rights of NEC Corporation or others.  
Descriptions of circuits, software, and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these circuits,  
software, and information in the design of the customer's equipment shall be done under the full responsibility  
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third  
parties arising from the use of these circuits, software, and information.  
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,  
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or  
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety  
measures in its design, such as redundancy, fire-containment, and anti-failure features.  
NEC devices are classified into the following three quality grades:  
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a  
customer designated "quality assurance program" for a specific application. The recommended applications of  
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device  
before using it in a particular application.  
Standard: Computers, office equipment, communications equipment, test and measurement equipment,  
audio and visual equipment, home electronic appliances, machine tools, personal electronic  
equipment and industrial robots  
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems or medical equipment for life support, etc.  
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.  
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,  
they should contact an NEC sales representative in advance.  
M7 98. 8  
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