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PYX28HC64-12CWMB

型号：

PYX28HC64-12CWMB

品牌：

PYRAMID[ PYRAMID SEMICONDUCTOR CORPORATION ]

页数：

11 页

PDF大小：

717 K

下载PDF手册
PYX28HC64  
8K x 8 EEPROM  
FEATURES  
Access Times of 70, 90, and 120ns  
ꢀSingle 5V±10% Power Supply  
Software Data Protection  
Fully TTL Compatible Inputs and Outputs  
Endurance: 100,000 Cycles  
Simple Byte and Page Write  
Data Retention: 100 Years  
Low Power CMOS:  
- 40 mA Active Current  
- 200 µA Standby Current  
Available in the following packages:  
– 32-Pin Ceramic LCC (450 x 550 mils)  
– 28-Pin 600 mil Ceramic DIP  
Fast Write Cycle Times  
DESCRIPTIOꢀ  
PIꢀ COꢀFIꢂURATIOꢀS  
The PYX28HC64 is a 5 Volt 8Kx8 EEPROM using floating  
gate CMOS Technology. The device supports 64-byte  
page write operation. The PYX28HC64 features DATA  
andToggleBitPollingaswellasasystemsoftwarescheme  
used to indicate early completion of a Write Cycle. The  
devicealsoincludesuser-optionalsoftwaredataprotection.  
Endurance is 100,000 Cycles and Data Retention is 100  
Years. The device is available in a 32-Pin LCC package  
as well as a 28-Pin 600 mil wide Ceramic DIP.  
FUꢀCTIOꢀAL BLOCꢁ DIAꢂRAM  
DIP (C5-1)  
LCC (L6)  
Document # EEPROM107 REV OR  
Revised August 2011  
PYX28HC64 - 8K x 8 EEPROM  
MAꢃIMUM RATIꢀꢂS(1)  
RECOMMEꢀDED OPERATIꢀꢂ COꢀDITIOꢀS  
Sym Parameter  
Value  
Unit  
ꢂrade(2)  
Ambient Temp  
ꢂꢀD  
VCC  
Power Supply Pin with  
VCC  
Military  
-55°C to +125°C  
0V  
5.0V ± 10%  
-0.3 to +6.25  
V
Respect to GND  
Terminal Voltage with  
VTERM Respect to GND (up to  
7.0V)  
-0.5 to +6.25  
V
CAPACITAꢀCES(4)  
TA  
Operating Temperature  
-55 to +125  
-55 to +125  
-65 to +150  
1.0  
°C  
°C  
°C  
W
(VCC = 5.0V, TA = 25°C, f = 1.0MHz)  
TBIAS Temperature Under Bias  
TSTG Storage Temperature  
Sym Parameter  
Conditions Typ Unit  
PT  
Power Dissipation  
CIN  
Input Capacitance  
VIN = 0V  
10  
10  
pF  
pF  
IOUT DC Output Current  
50  
mA  
COUT  
Output Capacitance  
VOUT = 0V  
DC ELECTRICAL CHARACTERISTICS  
(Over Recommended Operating Temperature & Supply Voltage)(2)  
Sym Parameter  
Test Conditions  
Min  
Max  
Unit  
V
VIH Input High Voltage  
2.0  
VCC + 0.5  
0.8  
VIL Input Low Voltage  
-0.5(3)  
V
VHC CMOS Input High Voltage  
VLC CMOS Input Low Voltage  
VOL Output Low Voltage (TTL Load)  
VOH Output High Voltage (TTL Load)  
VCC - 0.2 VCC + 0.5  
V
-0.5(3)  
0.2  
0.4  
V
IOL = +5 mA, VCC = Min  
IOH = -5 mA, VCC = Min  
V
2.4  
-10  
V
VCC = Max  
ILI  
Input Leakage Current  
+10  
+10  
µA  
µA  
VIN = GND to VCC  
VCC = Max, CE = VIH,  
VOUT = GND to VCC  
CE ≥ VIH, OE = VIL,  
VCC = Max,  
-10  
—
ILO Output Leakage Current  
ISB Standby Power Supply Current (TTL Input Levels)  
3
mA  
µA  
f = Max, Outputs Open  
CE ≥ VHC,  
VCC = Max,  
—
—
ISB1 Standby Power Supply Current (CMOS Input Levels)  
250  
f = Max, Outputs Open,  
VIN ≤ VLC or VIN ≥ VHC  
CE = OE = VIL,  
WE = VIH,  
ICC Supply Current  
40  
µA  
All I/O's = Open,  
Inputs = VCC = 5.5V  
ꢀotes:  
1. Stresses greater than those listed under MAXIMUM RATINGS may  
cause permanent damage to the device. This is a stress rating only  
and functional operation of the device at these or any other conditions  
above those indicated in the operational sections of this specification  
is not implied. Exposure to MAXIMUM rating conditions for extended  
periods may affect reliability.  
3.TransientinputswithVIL andIIL notmorenegativethan-3.0Vand-100mA,  
respectively, are permissible for pulse widths up to 20ns.  
4. This parameter is sampled and not 100% tested.  
2. Extended temperature operation guaranteed with 400 linear feet per  
minute of air flow.  
Document # EEPROM107 REV OR  
Page 2  
PYX28HC64 - 8K x 8 EEPROM  
AC ELECTRICAL CHARACTERISTICS—READ CYCLE  
(VCC = 5V ± 10%, All Temperature Ranges)(2)  
-70  
-90  
-120  
Unit  
Sym Parameter  
tAVAV Read Cycle Time  
Min  
Max  
Min  
Max  
Min  
Max  
70  
90  
120  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tAVQV Address Access Time  
70  
70  
40  
90  
90  
50  
120  
120  
60  
tELQV Chip Enable Access Time  
tOLQV Output Enable Access Time  
tELQX Chip Enable to Output in Low Z  
tEHQZ Chip Disable to to Output in High Z  
tOLQX Output Enable to Output in Low Z  
tOHQZ Output Disable to Output in High Z  
tAVQX Output Hold from Address Change  
10  
10  
0
10  
10  
0
10  
10  
0
50  
50  
50  
50  
50  
50  
tPU  
tPD  
Chip Enable to Power Up Time  
90  
10  
90  
10  
90  
10  
Chip Disable to Power Down Time  
TIMIꢀꢂ WAVEFORM OF READ CYCLE  
Document # EEPROM107 REV OR  
Page 3  
PYX28HC64 - 8K x 8 EEPROM  
AC CHARACTERISTICS—WRITE CYCLE  
(VCC = 5V ± 10%, All Temperature Ranges)(2)  
-70  
-90  
-120  
Unit  
Symbol Parameter  
Min  
Max  
Min  
Max  
Min  
Max  
tWHWL1  
Write Cycle Time  
tEHEL1  
5
5
5
ms  
ns  
ns  
tAVEL  
Address Setup Time  
tAVWL  
10  
60  
10  
60  
10  
60  
tELAX  
Address Hold Time  
tWLAX  
tWLEL  
Write Setup Time  
tELWL  
0
0
0
ns  
ns  
ns  
ns  
ns  
tWHEH  
Write Hold Time  
OE Setup Time  
OE Hold Time  
WE Pulse Width  
0
0
0
tOHEL  
tOHWL  
10  
10  
60  
10  
10  
60  
10  
10  
60  
tWHOL  
tELEH  
tWLWH  
tDVEH  
tDVWH  
Data Setup Time  
Data Hold Time  
50  
10  
50  
10  
50  
10  
ns  
ns  
µs  
tEHDX  
tWHDX  
tEHEL2  
tWHWL2  
Byte Load Cycle Time  
0.2  
2
0.2  
2
0.2  
2
tELWL  
tOVHWL  
tEHWH  
tWHOH  
tOHAV  
tWLWH2  
VH  
CE Setup Time  
1
1
1
1
1
1
µs  
µs  
µs  
µs  
ms  
ns  
V
Output Setup Time  
CE Hold Time  
1
1
1
OE Hold Time  
1
1
1
Erase Time  
200  
150  
12  
200  
150  
12  
200  
150  
12  
Chip Erase Time  
High Voltage for Chip Clear  
13  
13  
13  
Document # EEPROM107 REV OR  
Page 4  
PYX28HC64 - 8K x 8 EEPROM  
TIMIꢀꢂ WAVEFORM OF BYTE WRITE CYCLE (cE COꢀTROLLED)  
TIMIꢀꢂ WAVEFORM OF BYTE WRITE CYCLE (wE COꢀTROLLED)  
Document # EEPROM107 REV OR  
Page 5  
PYX28HC64 - 8K x 8 EEPROM  
TIMIꢀꢂ WAVEFORM OF PAꢂE WRITE CYCLE  
TIMIꢀꢂ WAVEFORM OF CHIP CLEAR CYCLE  
Document # EEPROM107 REV OR  
Page 6  
PYX28HC64 - 8K x 8 EEPROM  
WRITE SEQUEꢀCE FOR SOFTWARE DATA  
PROTECTIOꢀ  
SOFTWARE SEQUEꢀCE TO DE-ACTIVATE  
SOFTWARE DATA PROTECTIOꢀ  
Document # EEPROM107 REV OR  
Page 7  
PYX28HC64 - 8K x 8 EEPROM  
AC TEST COꢀDITIOꢀS  
Input Pulse Levels  
TRUTH TABLE  
GND to 3.0V  
10ns  
Mode  
cE  
OE  
VIL  
VIH  
VIH  
VIL  
X
wE  
VIH  
VIL  
VIL  
X
I/O  
Input Rise and Fall Times  
Input Timing Reference Level  
Output Timing Reference Level  
Output Load  
Read  
VIL  
VIL  
VIL  
X
DOUT  
1.5V  
Chip Clear  
Byte Write  
Write Inhibit  
Write Inhibit  
Standby  
X
1.5V  
DIN  
See Figure 1  
High Z / DOUT  
High Z / DOUT  
High Z  
X
VIH  
X
VIH  
X
Figure 1. Output Load  
Document # EEPROM107 REV OR  
Page 8  
PYX28HC64 - 8K x 8 EEPROM  
ORDERIꢀꢂ IꢀFORMATIOꢀ  
Document # EEPROM107 REV OR  
Page 9  
PYX28HC64 - 8K x 8 EEPROM  
SIDE BRAZED DUAL Iꢀ-LIꢀE PACꢁAꢂE (600 mils)  
Pkg #  
C5-1  
# Pins  
28 (600 mil)  
Symbol  
Min  
-
Max  
A
b
0.232  
0.026  
0.065  
0.018  
1.490  
0.610  
0.014  
0.045  
0.008  
-
b2  
C
D
E
0.500  
eA  
e
0.600 BSC  
0.100 BSC  
L
0.125  
0.200  
Q
0.015  
0.005  
0.005  
0.060  
S1  
S2  
-
-
RECTAꢀꢂULAR LEADLESS CHIP CARRIER  
Pkg #  
# Pins  
Symbol  
A
L6  
32  
Min  
Max  
0.060  
0.050  
0.022  
0.442  
0.075  
0.065  
0.028  
0.458  
A1  
B1  
D
D1  
D2  
D3  
E
0.300 BSC  
0.150 BSC  
-
0.458  
0.560  
0.540  
E1  
E2  
E3  
e
0.400 BSC  
0.200 BSC  
-
0.558  
0.050 BSC  
0.040 REF  
0.020 REF  
h
j
L
0.045  
0.055  
0.055  
0.095  
L1  
0.045  
0.075  
L2  
ND  
NE  
7
9
Document # EEPROM107 REV OR  
Page 10  
PYX28HC64 - 8K x 8 EEPROM  
REVISIOꢀS  
DOCUMEꢀT ꢀUMBER EEPROM107  
DOCUMEꢀT TITLE  
PYX28HC64 - 8K x 8 EEPROM  
REV ISSUE DATE  
ORIꢂIꢀATOR DESCRIPTIOꢀ OF CHAꢀꢂE  
JDB New Data Sheet  
OR  
Aug 2011  
Document # EEPROM107 REV OR  
Page 11  
厂商 型号 描述 页数 下载

PYRAMID

 		PYX28C010-12CWMB [ EEPROM, 128KX8, 120ns, Parallel, CMOS, CDIP32, 0.600 INCH, CERAMIC, DIP-32 ] 12 页

PYRAMID

 		PYX28C010-12L32M [ EEPROM, 128KX8, 120ns, Parallel, CMOS, CQCC32, 0.550 X 0.450 INCH, CERAMIC, LCC-32 ] 12 页

PYRAMID

 		PYX28C010-15CWMB [ EEPROM, 128KX8, 150ns, Parallel, CMOS, CDIP32, 0.600 INCH, CERAMIC, DIP-32 ] 12 页

PYRAMID

 		PYX28C010-15L32MB [ EEPROM, 128KX8, 150ns, Parallel, CMOS, CQCC32, 0.550 X 0.450 INCH, CERAMIC, LCC-32 ] 12 页

PYRAMID

 		PYX28C010-20CWM [ EEPROM, 128KX8, 200ns, Parallel, CMOS, CDIP32, 0.600 INCH, CERAMIC, DIP-32 ] 12 页

PYRAMID

 		PYX28C010-25L32M [ EEPROM, 128KX8, 250ns, Parallel, CMOS, CQCC32, 0.550 X 0.450 INCH, CERAMIC, LCC-32 ] 12 页

PYRAMID

 		PYX28C010-25L32MB [ EEPROM, 128KX8, 250ns, Parallel, CMOS, CQCC32, 0.550 X 0.450 INCH, CERAMIC, LCC-32 ] 12 页

PYRAMID

 		PYX28C64 8K ×8的EEPROM[ 8K x 8 EEPROM ] 11 页

PYRAMID

 		PYX28C64-20CWM 8K ×8的EEPROM[ 8K x 8 EEPROM ] 11 页

PYRAMID

 		PYX28C64-20CWMB 8K ×8的EEPROM[ 8K x 8 EEPROM ] 11 页

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