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NVTFS4C13NTAG

型号：

NVTFS4C13NTAG

品牌：

ONSEMI[ ONSEMI ]

页数：

6 页

PDF大小：

89 K

下载PDF手册
NVTFS4C13N  
Power MOSFET  
30 V, 9.4 mW, 40 A, Single N−Channel,  
m8FL  
Features  
• Low R  
to Minimize Conduction Losses  
DS(on)  
• Low Capacitance to Minimize Driver Losses  
• Optimized Gate Charge to Minimize Switching Losses  
• NVTFS4C13NWF − Wettable Flanks Product  
• NVT Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable  
www.onsemi.com  
V
R
MAX  
I MAX  
D
(BR)DSS  
DS(ON)  
9.4 mW @ 10 V  
14 mW @ 4.5 V  
30 V  
40 A  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
D (5,6)  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
Parameter  
Drain−to−Source Voltage  
Symbol Value Unit  
V
30  
20  
14  
V
V
A
DSS  
G (4)  
Gate−to−Source Voltage  
V
GS  
Continuous Drain  
Current R  
T = 25°C  
I
D
A
S (1,2,3)  
N−CHANNEL MOSFET  
q
JA  
T = 100°C  
A
10  
(Notes 1, 2, 4)  
T = 25°C  
P
3.0  
1.5  
40  
W
Power Dissipation R  
(Note 1, 2, 4)  
q
A
D
JA  
MARKING DIAGRAM  
T = 100°C  
A
Steady  
State  
1
Continuous Drain  
T
C
= 25°C  
I
D
1
S
S
S
G
D
D
D
D
Current R  
3, 4)  
(Note 1,  
q
JC  
XXXX  
AYWWG  
G
T
C
= 100°C  
28  
A
WDFN8  
(m8FL)  
CASE 511AB  
Power Dissipation  
(Note 1, 3, 4)  
T
= 25°C  
P
D
26  
13  
W
C
R
q
JC  
T
C
= 100°C  
Pulsed Drain Current  
T = 25°C, t = 10 ms  
I
DM  
152  
A
A
p
4C13  
= Specific Device Code for  
NVMTS4C13N  
Operating Junction and Storage Temperature  
T ,  
−55 to  
+175  
°C  
J
stg  
T
13WF = Specific Device Code of  
NVTFS4C13NWF  
A
Source Current (Body Diode)  
I
S
24  
10  
A
= Assembly Location  
= Year  
= Work Week  
Single Pulse Drain−to−Source Avalanche Energy  
E
AS  
mJ  
Y
(T = 25°C, I = 14 A , L = 0.1 mH)  
J
L
pk  
WW  
G
Lead Temperature for Soldering Purposes  
(1/8″ from case for 10 s)  
T
L
260  
°C  
= Pb−Free Package  
(Note: Microdot may be in either location)  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
ORDERING INFORMATION  
THERMAL RESISTANCE MAXIMUM RATINGS  
See detailed ordering and shipping information on page 5 of  
this data sheet.  
Parameter  
Symbol  
Value  
Unit  
Junction−to−Case − Steady State (Drain)  
(Notes 1 and 4)  
R
5.8  
q
JC  
°C/W  
Junction−to−Ambient – Steady State  
(Notes 1 and 2)  
R
50  
q
JA  
1. The entire application environment impacts the thermal resistance values  
shown, they are not constants and are only valid for the particular conditions  
noted.  
2
2. Surface−mounted on FR4 board using a 650 mm 2 oz. Cu pad.  
3. Assumes heat−sink sufficiently large to maintain constant case temperature  
independent of device power.  
4. Continuous DC current rating. Maximum current for pulses as long as  
1 second is higher but is dependent on pulse duration and duty cycle.  
© Semiconductor Components Industries, LLC, 2017  
1
Publication Order Number:  
January, 2017 − Rev. 2  
NVTFS4C13N/D  
 
NVTFS4C13N  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)  
J
Parameter  
Symbol  
Test Condition  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Drain−to−Source Breakdown Voltage  
V
V
GS  
= 0 V, I = 250 mA  
30  
V
(BR)DSS  
D
Drain−to−Source Breakdown Voltage  
Temperature Coefficient  
V
/
14.9  
(BR)DSS  
mV/°C  
T
J
Zero Gate Voltage Drain Current  
I
V
V
= 0 V,  
= 24 V  
T = 25°C  
1.0  
10  
DSS  
GS  
DS  
J
mA  
T = 125°C  
J
Gate−to−Source Leakage Current  
ON CHARACTERISTICS (Note 5)  
Gate Threshold Voltage  
I
V
= 0 V, V  
=
GS  
20 V  
100  
nA  
GSS  
DS  
V
V
= V , I = 250 mA  
1.3  
2.1  
V
GS(TH)  
GS  
DS  
D
Negative Threshold Temperature Coefficient  
Drain−to−Source On Resistance  
V
/T  
4.8  
7.5  
11.2  
40  
mV/°C  
GS(TH)  
J
R
V
= 10 V  
I
I
= 30 A  
= 12 A  
9.4  
14  
DS(on)  
GS  
D
mW  
V
GS  
= 4.5 V  
D
Forward Transconductance  
Gate Resistance  
g
FS  
V
= 1.5 V, I = 15 A  
S
DS  
D
R
T = 25°C  
A
1.0  
W
G
CHARGES AND CAPACITANCES  
Input Capacitance  
C
770  
443  
127  
0.165  
7.8  
ISS  
Output Capacitance  
C
V
= 0 V, f = 1 MHz, V = 15 V  
pF  
nC  
OSS  
RSS  
GS  
DS  
Reverse Transfer Capacitance  
Capacitance Ratio  
C
C
/C  
V
GS  
= 0 V, V = 15 V, f = 1 MHz  
RSS ISS  
DS  
Total Gate Charge  
Q
G(TOT)  
Threshold Gate Charge  
Gate−to−Source Charge  
Gate−to−Drain Charge  
Gate Plateau Voltage  
Total Gate Charge  
Q
1.4  
G(TH)  
Q
2.9  
V
= 4.5 V, V = 15 V; I = 30 A  
GS  
GD  
GP  
GS  
DS  
D
Q
V
3.7  
3.6  
V
Q
V
= 10 V, V = 15 V; I = 30 A  
15.2  
nC  
G(TOT)  
GS  
DS  
D
SWITCHING CHARACTERISTICS (Note 6)  
Turn−On Delay Time  
Rise Time  
t
9
d(ON)  
t
r
35  
13  
5
V
= 4.5 V, V = 15 V,  
DS  
GS  
ns  
ns  
V
I
D
= 15 A, R = 3.0 W  
G
Turn−Off Delay Time  
Fall Time  
t
d(OFF)  
t
f
Turn−On Delay Time  
Rise Time  
t
6.0  
26  
16  
3.0  
d(ON)  
t
r
V
= 10 V, V = 15 V,  
DS  
GS  
I
D
= 15 A, R = 3.0 W  
G
Turn−Off Delay Time  
Fall Time  
t
d(OFF)  
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS  
Forward Diode Voltage  
V
SD  
T = 25°C  
J
0.82  
0.69  
23.4  
12.1  
11.3  
9.7  
1.1  
V
GS  
= 0 V,  
I
S
= 30 A  
T = 125°C  
J
Reverse Recovery Time  
Charge Time  
t
RR  
t
a
ns  
V
= 0 V, dIS/dt = 100 A/ms,  
GS  
I
S
= 30 A  
Discharge Time  
t
b
Reverse Recovery Charge  
Q
nC  
RR  
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.  
6. Switching characteristics are independent of operating junction temperatures.  
www.onsemi.com  
2
 
NVTFS4C13N  
TYPICAL CHARACTERISTICS  
70  
70  
60  
50  
40  
30  
20  
10  
0
10 V  
6.5 V  
V
DS  
= 5 V  
4.5 V  
60  
50  
40  
30  
20  
10  
0
4.2 V  
4 V  
3.8 V  
3.6 V  
3.4 V  
3.2 V  
T = 125°C  
J
3.0 V  
2.8 V  
T = 25°C  
J
T = −55°C  
J
T = 25°C  
J
0
1
2
3
4
5
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
V
DS  
, DRAIN−TO−SOURCE VOLTAGE (V)  
V
GS  
, GATE−TO−SOURCE VOLTAGE (V)  
Figure 1. On−Region Characteristics  
Figure 2. Transfer Characteristics  
0.015  
0.014  
0.013  
0.012  
0.011  
0.010  
0.009  
0.008  
0.007  
0.006  
0.022  
0.020  
0.018  
0.016  
0.014  
0.012  
0.010  
0.008  
0.006  
I
D
= 30 A  
T = 25°C  
J
V
= 4.5 V  
GS  
V
= 10 V  
GS  
3.0  
4.0  
5.0  
6.0  
7.0  
8.0  
9.0  
10  
10  
20  
30  
40  
50  
60  
70  
V
GS  
, GATE−TO−SOURCE VOLTAGE (V)  
I , DRAIN CURRENT (A)  
D
Figure 3. On−Resistance vs. VGS  
Figure 4. On−Resistance vs. Drain Current and  
Gate Voltage  
10000  
1000  
100  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
I
V
= 30 A  
V
GS  
= 0 V  
D
= 10 V  
GS  
T = 150°C  
J
T = 125°C  
J
T = 85°C  
J
10  
−50 −25  
0
25  
50  
75  
100 125 150 175  
5
10  
, DRAIN−TO−SOURCE VOLTAGE (V)  
DS  
15  
20  
25  
30  
T , JUNCTION TEMPERATURE (°C)  
V
J
Figure 5. On−Resistance Variation with  
Temperature  
Figure 6. Drain−to−Source Leakage Current  
vs. Voltage  
www.onsemi.com  
3
NVTFS4C13N  
TYPICAL CHARACTERISTICS  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
11  
V
= 0 V  
GS  
10  
9
8
7
6
5
4
3
2
1
0
Q
T
T = 25°C  
J
C
iss  
C
oss  
Q
gd  
T = 25°C  
DD  
J
V
Q
gs  
= 15 V  
C
rss  
V
GS  
= 10 V  
I
D
= 30 A  
0
5
10  
15  
20  
25  
30  
0
2
4
6
8
10  
12  
14  
16  
V
DS  
, DRAIN−TO−SOURCE VOLTAGE (V)  
Q , TOTAL GATE CHARGE (nC)  
g
Figure 7. Capacitance Variation  
Figure 8. Gate−to−Source and  
Drain−to−Source Voltage vs. Total Charge  
1000  
100  
10  
30  
25  
20  
15  
10  
5
V = 0 V  
GS  
V
= 15 V  
= 15 A  
= 10 V  
DD  
I
D
V
GS  
T = 25°C  
J
t
r
t
d(off)  
T = 125°C  
J
t
d(on)  
t
f
1
0
1
10  
R , GATE RESISTANCE (W)  
100  
0.4  
0.5  
0.6  
0.7  
0.8  
0.9  
1.0  
V
SD  
, SOURCE−TO−DRAIN VOLTAGE (V)  
G
Figure 9. Resistive Switching Time Variation  
vs. Gate Resistance  
Figure 10. Diode Forward Voltage vs. Current  
100  
10  
1
10 ms  
100 ms  
1 ms  
V
T
= 10 V  
GS  
= 25°C  
C
dc  
2
650 mm 2 oz Cu Pad  
10 ms  
0.1  
R
Limit  
DS(on)  
Thermal Limit  
Package Limit  
0.01  
0.1  
1
10  
100  
V
DS  
, DRAIN−TO−SOURCE VOLTAGE (V)  
Figure 11. Maximum Rated Forward Biased  
Safe Operating Area  
www.onsemi.com  
4
NVTFS4C13N  
TYPICAL CHARACTERISTICS  
100  
10  
Duty Cycle = 50%  
20%  
10%  
5%  
2%  
1
1%  
0.1  
0.01  
Single Pulse  
0.000001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
100  
1000  
PULSE TIME (sec)  
Figure 12. Thermal Response  
100  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
T
= 25°C  
J(initial)  
10  
T
= 125°C  
J(initial)  
1
1.0E−06  
0
0
5
10 15 20 25 30 35 40 45 50 55 60 65 70  
(A)  
1.0E−05  
1.0E−04  
1.E−03  
I
D
T , TIME IN AVALANCHE (s)  
AV  
Figure 13. GFS vs. ID  
Figure 14. Avalanche Characteristics  
ORDERING INFORMATION  
Device  
†
Package  
Shipping  
NVTFS4C13NTAG  
WDFN8  
(Pb−Free)  
1500 / Tape & Reel  
1500 / Tape & Reel  
5000 / Tape & Reel  
5000 / Tape & Reel  
NVTFS4C13NWFTAG  
NVTFS4C13NTWG  
WDFN8  
(Pb−Free)  
WDFN8  
(Pb−Free)  
NVTFS4C13NWFTWG  
WDFN8  
(Pb−Free)  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
www.onsemi.com  
5
NVTFS4C13N  
PACKAGE DIMENSIONS  
WDFN8 3.3x3.3, 0.65P  
CASE 511AB  
ISSUE D  
2X  
NOTES:  
0.20  
C
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH  
PROTRUSIONS OR GATE BURRS.  
D
A
B
E
2X  
D1  
MILLIMETERS  
INCHES  
NOM  
0.030  
−−−  
0.012  
0.20  
C
8
1
7
6
5
4
DIM  
A
A1  
b
MIN  
0.70  
0.00  
0.23  
0.15  
NOM  
0.75  
−−−  
0.30  
0.20  
MAX  
MIN  
MAX  
0.031  
0.002  
0.016  
0.010  
0.028  
0.000  
0.009  
0.006  
0.80  
0.05  
0.40  
0.25  
4X  
q
E1  
c
0.008  
D
3.30 BSC  
3.05  
2.11  
3.30 BSC  
3.05  
1.60  
0.30  
0.65 BSC  
0.41  
0.80  
0.43  
0.130 BSC  
0.120  
0.083  
0.130 BSC  
0.120  
0.063  
0.012  
0.026 BSC  
0.016  
0.032  
0.017  
D1  
D2  
E
E1  
E2  
E3  
e
G
K
L
L1  
M
2.95  
1.98  
3.15  
2.24  
0.116  
0.078  
0.124  
0.088  
c
2
3
A1  
TOP VIEW  
2.95  
1.47  
0.23  
3.15  
1.73  
0.40  
0.116  
0.058  
0.009  
0.124  
0.068  
0.016  
0.10  
0.10  
C
C
A
C
6X  
e
0.30  
0.65  
0.30  
0.06  
1.40  
0
0.51  
0.95  
0.56  
0.20  
1.60  
0.012  
0.026  
0.012  
0.002  
0.055  
0
0.020  
0.037  
0.022  
0.008  
0.063  
SEATING  
PLANE  
0.13  
1.50  
−−−  
0.005  
0.059  
−−−  
DETAIL A  
SIDE VIEW  
DETAIL A  
q
12  
12  
_
_
_
_
8X  
b
0.10  
0.05  
C
C
A B  
SOLDERING FOOTPRINT*  
8X  
e/2  
0.42  
0.65  
PITCH  
4X  
L
4X  
0.66  
1
8
4
5
PACKAGE  
OUTLINE  
K
E2  
M
E3  
3.60  
L1  
D2  
BOTTOM VIEW  
G
2.30  
0.57  
0.47  
0.75  
2.37  
3.46  
DIMENSION: MILLIMETERS  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent  
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  
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PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
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USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
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Phone: 81−3−5817−1050  
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Order Literature: http://www.onsemi.com/orderlit  
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Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada  
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For additional information, please contact your local  
Sales Representative  
◊
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