4N90
Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
Drain Current vs. Gate Threshold Voltage
300
300
250
200
150
100
250
200
150
100
50
50
0
0
0
200
400 600 800 1000 1200
0
1
2
3
4
5
Gate Threshold Voltage, VTH (V)
Drain-Source Breakdown Voltage, BVDSS (V)
Drain-Source On-State Resistance
Characteristics
Body-Diode Continuous Current vs.
Source to Drain Voltage
2.5
5
2
4
1.5
3
2
1
VGS=10V, ID=2A
1
0
0.5
0
0
1
2
3
4
5
6
0.2
0.4
0.6
0.8
1.0
0
Drain to Source Voltage, VDS (V)
Source to Drain Voltage, VSD (V)
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exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
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