5N90
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=250µA
900
V
V/°C
µA
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ ID=250μA,Referenced to 25°C
1.0
VDS=900V, VGS=0V
10
Drain-Source Leakage Current
Gate-Source Leakage Current
IDSS
IGSS
VDS=720V, TC=125°C
VDS=0V ,VGS=30V
VDS=0V ,VGS=-30V
100
100
-100
µA
Forward
Reverse
nA
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
3.0
5.0
2.8
V
ꢀ
S
Drain-Source On-State Resistance
Forward Transconductance
DYNAMIC PARAMETERS
Input Capacitance
RDS(ON) VGS=10V, ID=2.5A
2.0
4.0
gFS
VDS=50V, ID=2.5A (Note 1)
CISS
COSS
CRSS
1200 1550 pF
VDS=25V,VGS=0V, f=1.0MHz
IG=3.3mA
Output Capacitance
110 145
13 17
pF
pF
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
QG
QGS
QGD
tD(ON)
tR
140 160
nC
nC
nC
ns
ns
ns
ns
VDS=120V, VGS=10V, ID=5A
(Note 1,2)
Gate-Source Charge
12
30
Gate-Drain Charge
Turn-ON Delay Time
70
90
Turn-ON Rise Time
106 140
196 220
110 130
VDD=30V, ID=1A, RG=25ꢀ
(Note 1,2)
Turn-OFF Delay Time
Turn-OFF Fall Time
tD(OFF)
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
IS
ISM
VSD
trr
5
12
A
A
IS =5A, VGS=0V
1.4
V
610
ns
μC
VGS=0V, IS=5.4A,
dIF/dt=100A/μs (Note 1)
QRR
5.26
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-499.H
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