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3TA80GK06NB-B

型号:

3TA80GK06NB-B

品牌:

SIRECTIFIER[ SIRECTIFIER SEMICONDUCTORS ]

页数:

3 页

PDF大小:

1413 K

3TA80GKXXNB-B  
Three Phase Thyristor Module (Half Bridge)  
G2  
K2  
K1  
Dimensions in mm (1mm = 0.0394")  
K2  
K3  
3
K2  
2
K1  
1
G1  
K1  
K3  
G2  
G1  
K2  
K1  
G3 K3  
A
A
K3  
G3  
Type  
VRSM  
V
VRRM  
V
3TA80GK03NB-B  
3TA80GK04NB-B  
3TA80GK06NB-B  
400  
500  
600  
300  
400  
500  
Symbol  
Test Conditions  
Maximum Ratings  
Unit  
80  
125  
IT(AV)  
IT(RMS)  
Single phase, half wave, 180oC conduction,TC=114oC  
1/2cycle, 50Hz/60Hz, peak value, non-repetitive  
A
2300/2500  
A
ITSM  
I2t  
A2s  
26000  
10  
1
PGM  
W
A
PG(AV)  
3
IFGM  
VFGM  
VRGM  
10  
5
V
IG=150mA, Tj=25oC, VD=1/2VDRM, dIG/dt=1A/us  
/us  
A
di/dt  
60  
-30...+150  
150  
-30...+125  
TVJ  
TVJM  
Tstg  
oC  
to heatsink M6  
to terminals M5  
Ms  
Mt  
3 ~ 5  
~
Nm  
2.5  
5
g
Weight  
169  
P1  
www.sirectifier.com  
©2008 SIRECTIFIER All rights reserved,  
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com  
3TA80GKXXNB-B  
Three Phase Thyristor Module (Half Bridge)  
Symbol  
Test Conditions  
at VDRM, single phase, half wave, Tj=150oC  
On-State Current 240A, Tj=25oC Inst. measurement  
Tj=25oC, IT=1A, VD=6V  
Unit  
min.  
typ.  
max.  
IDRM  
10  
10  
mA  
IRRM  
VTM  
1.25  
V
mA  
150  
IGT  
Tj=150oC, VD=1/2VDRM  
V
0.25  
VGD  
IT=100A, IG=200mA, Tj=25oC, VD=1/2VDRM, dIG/dt=1A/us  
Tj=150oC, VD=2/3VDRM, Exponential wave  
Tj=25oC  
tgt  
10  
us  
V/us  
mA  
150  
dv/dt  
IH  
100  
oC/W  
Junction to case (1/3 Module)  
RthJC  
0.34  
FEATURES  
* International standard package  
APPLICATIONS  
ADVANTAGES  
* Welding Machine Power Supply * Space and weight savings  
* Copper  
* Glass passivated chips  
* RoHS compliant  
* DC Power Supply  
* Simple mounting with two screws  
* Improved temperature and power  
cycling  
base plate  
* Reduced protection circuits  
P2  
www.sirectifier.com  
©2008 SIRECTIFIER All rights reserved,  
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com  
3TA80GKXXNB-B  
Three Phase Thyristor Module (Half Bridge)  
Average On-State Current Vs Maximum Allowable�  
Transient Thermal Impedance  
Case Temperature(Single phase half wave)  
5�  
16�  
15�  
14�  
13�  
12�  
Per one erement  
2
4�  
3�  
360。�  
Junction to case  
Per one element  
: Conduction Angle  
2�  
11�  
10�  
1�  
0�  
θ=60゜�  
θ=120゜�  
D.C.  
θ=30゜� θ=90゜θ=180゜�  
0�  
1�  
� 5� 5�� 5� 50  
0�  
�  
10�  
15�  
Time t(sec�  
Average On-State Current A�  
Surge On-State Current Rating�  
On-State Voltage max  
(Non-Repetitive�  
300�  
2�  
Per one element  
Tj=25℃�  
3�  
10  
250�  
200�  
5�  
2�  
60Hz  
2�  
10  
150�  
5�  
100�  
0�  
2�  
1�  
10  
0�  
0�  
1�  
5�  
2�  
5�  
3�  
1�  
00  
2�  
5�  
10  
�  
On-State Voltage(V�  
Time(cycles�  
Average On-State Current Vs Power Dissipation�  
(Single phase half wave)  
Gate Characteristics  
2�  
15�  
D.C.  
Peak Forward Gate Voltage(10V�  
Per one erement  
1�  
10  
5�  
θ=180゜�  
θ=120゜�  
θ=90゜�  
θ=60゜�  
10�  
2�  
0�  
10  
25℃�  
θ=30゜�  
2
150℃�  
30℃�  
�  
5�  
2�  
360。�  
: Conduction Angle  
Maximum Gate Voltage that will not terigger any unit  
0�  
1�  
2�  
3�  
10  
2�  
5� 0  
2�  
5� 0  
2�  
5�  
�  
10�  
15�  
Gate Current mA�  
Average On-State Current A�  
www.sirectifier.com  
P3  
©2008 SIRECTIFIER All rights reserved,  
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com  
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