1SS133M
Taiwan Semiconductor
Small Signal Product
300mW, Hermetically Sealed Glass Switching Diodes
FEATURES
- Fast switching device (trr < 4.0 ns)
- Through-hole mount device type
- DO-34 package (JEDEC DO-204)
- Hermetically sealed glass
- Compression bonded construction
- All external surfaces are corrosion resistant
and leads are readily solderable
- RoHS compliant
DO-34
- Solder hot dip Tin (Sn) lead finish
- Cathode indicated by polarity band
- Marking code: 133
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
VALUE
SYMBOL
PD
UNIT
mW
V
Power Dissipation
300
Working Inverse Voltage
Average Rectified Current
WIV
90
IO
150
mA
mA
A
oC
oC
Non-Repetitive Peak Forward Current
Peak Forward Surge Current
IFM
450
IFSURGE
TJ
2
Operating Junction Temperature
Storage Temperature Range
+ 175
-65 to +200
TSTG
PARAMETER
MIN
MAX
--
SYMBOL
UNIT
IR=500nA
IF=100mA
VR=80V
Breakdown Voltage
BV
VF
IR
80
V
V
Forward Voltage
1.2
500
4.0
4.0
Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time
nA
pF
ns
VR=0, f=1.0MHz
(Note 1)
Cj
trr
--
--
Notes: 1. Reverse Recovery Test Conditions: IF=IR=10mA, RL=100Ω, IRR=1mA
Document Number: DS_S1403003
Version: C15
