INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
IXFP24N65X
·FEATURES
·With low gate drive requirements
·Easy to drive
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VDSS
VGSS
ID
PARAMETER
VALUE
600
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±30
V
Drain Current-Continuous
Drain Current-Single Pulsed
Total Dissipation
24
A
IDM
48
A
PD
400
W
℃
℃
Tj
Operating Junction Temperature
Storage Temperature
-55~150
-55~150
Tstg
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
℃/W
Rth(ch-c) Channel-to-case thermal resistance
0.31
1
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