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IXFP24N65X_18

型号:

IXFP24N65X_18

品牌:

ISC[ INCHANGE SEMICONDUCTOR COMPANY LIMITED ]

页数:

2 页

PDF大小:

313 K

INCHANGE Semiconductor  
isc N-Channel MOSFET Transistor  
IXFP24N65X  
·FEATURES  
·With low gate drive requirements  
·Easy to drive  
·100% avalanche tested  
·Minimum Lot-to-Lot variations for robust device  
performance and reliable operation  
·APPLICATIONS  
·Switching applications  
·ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
VDSS  
VGSS  
ID  
PARAMETER  
VALUE  
600  
UNIT  
V
Drain-Source Voltage  
Gate-Source Voltage  
±30  
V
Drain Current-Continuous  
Drain Current-Single Pulsed  
Total Dissipation  
24  
A
IDM  
48  
A
PD  
400  
W
Tj  
Operating Junction Temperature  
Storage Temperature  
-55~150  
-55~150  
Tstg  
·THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
/W  
Rth(ch-c) Channel-to-case thermal resistance  
0.31  
1
isc websitewww.iscsemi.cn  
isc & iscsemi is registered trademark  
INCHANGE Semiconductor  
isc N-Channel MOSFET Transistor  
IXFP24N65X  
ELECTRICAL CHARACTERISTICS  
TC=25unless otherwise specified  
SYMBOL  
BVDSS  
VGS(th)  
RDS(on)  
IGSS  
PARAMETER  
CONDITIONS  
MIN  
600  
2.5  
TYP  
MAX  
UNIT  
V
Drain-Source Breakdown Voltage VGS=0V; ID= 0.25mA  
Gate Threshold Voltage  
VDS=±30V; ID=2.5mA  
VGS= 10V; ID=12A  
4.5  
175  
V
Drain-Source On-Resistance  
Gate-Source Leakage Current  
Drain-Source Leakage Current  
Diode forward voltage  
mΩ  
μA  
μA  
V
VGS= ±30V;VDS= 0V  
±0.1  
VDS= 600V; VGS= 0V;@Tc=25℃  
Tc=125℃  
20  
750  
IDSS  
VSDF  
ISD=24A, VGS = 0 V  
1.4  
2
isc websitewww.iscsemi.cn  
isc & iscsemi is registered trademark  
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