IXFR 10N100F
IXFR 12N100F
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
PLUS247TM Outline
VDS = 10 V; ID = IT
Note 1
8
12
S
Ciss
Coss
Crss
2700
305
93
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
12
9.8
31
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
RG = 2 Ω (External)
Terminals: 1 - Gate
2 - Drain (Collector)
12
3-Source(Emitter)
4 - Drain (Collector)
Qg(on)
Qgs
Qgd
77
16
42
nC
nC
nC
Dim.
Millimeter
Inches
Min. Max.
Min. Max.
VGS = 10 V, VDS = 0.5 • VDSS, ID = IT
A
4.83
2.29
1.91
5.21
2.54
2.16
.190 .205
.090 .100
.075 .085
A
A12
RthJC
RthCK
0.50 K/W
K/W
b
b12
C
D
E
1.14
1.91
2.92
1.40
2.13
3.12
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
b
0.15
0.61
0.80
20.80 21.34
15.75 16.13
e
5.45 BSC
.215 BSC
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
L
19.81 20.32
.780 .800
L1
3.81
4.32
.150 .170
.220 0.244
.170 .190
Symbol
TestConditions
Q
5.59
6.20
R
4.32
4.83
IS
VGS = 0 V
12
48
A
A
ISM
Repetitive;
pulse width limited by TJM
VSD
IF = IS, VGS = 0 V, Note 1
1.5
V
trr
250 ns
IF = 25 A,-di/dt = 100 A/µs, VR = 100 V
QRM
IRM
0.8
7
µC
A
Note: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
2. IT test current:
IXFR10N100
IXFR12N100
I = 5A
ITT = 6A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYSMOSFETs andIGBTsarecoveredbyoneormoreofthefollowingU.S.patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
