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LY502

型号:

LY502

品牌:

POLYFET[ POLYFET RF DEVICES ]

页数:

2 页

PDF大小:

49 K

polyfet rf devices  
LY502  
General Description  
Silicon VDMOS and LDMOS  
transistors designed specifically  
for broadband RF applications.  
Suitable for Military Radios,  
Cellular and Paging Amplifier Base  
Stations, Broadcast FM/AM, MRI,  
Laser Driver and others.  
SILICON GATE ENHANCEMENT MODE  
RF POWER LDMOS TRANSISTOR  
500.0Watts Push - Pull  
Package Style AY  
TM  
"Polyfet" process features  
HIGH EFFICIENCY, LINEAR  
HIGH GAIN, LOW NOISE  
ROHS COMPLIANT  
low feedback and output capacitances,  
resulting in high F transistors with high  
input impedance and high efficiency.  
t
o
25 C )  
ABSOLUTE MAXIMUM RATINGS ( T =  
Total  
Device  
Dissipation  
Junction to  
Case Thermal  
Resistance  
Maximum  
Junction  
Temperature  
DC Drain  
Current  
Drain to  
Gate  
Voltage  
Drain to  
Source  
Voltage  
Gate to  
Source  
Voltage  
Storage  
Temperature  
o
o
o
o
200  
40.0  
A
650 Watts  
0.25 C/W  
C
-65 C to 150 C  
70 V  
70 V  
20 V  
RF CHARACTERISTICS (  
500.0 WATTS OUTPUT )  
SYMBOL PARAMETER  
MIN  
18  
TYP  
MAX  
UNITS TEST CONDITIONS  
Gps  
η
Common Source Power Gain  
Idq = 0.80 A, Vds =  
V, F =  
V, F =  
V, F =  
MHz  
dB  
%
28.0  
28.0  
28.0  
225  
225  
225  
Idq =  
Drain Efficiency  
0.80  
70  
A, Vds =  
A, Vds =  
MHz  
MHz  
Idq = 0.80  
VSWR  
Load Mismatch Tolerance  
10:1  
Relative  
ELECTRICAL CHARACTERISTICS ( EACH SIDE )  
SYMBOL PARAMETER  
MIN  
65  
TYP  
MAX  
UNITS TEST CONDITIONS  
V
mA  
uA  
V
Drain Breakdown Voltage  
Ids = 50.00 mA, Vgs = 0V  
Vds =  
Bvdss  
Idss  
4.0  
Zero Bias Drain Current  
Gate Leakage Current  
28.0 V, Vgs = 0V  
Igss  
Vgs  
1
5
Vds = 0V Vgs = 30V  
Gate Bias for Drain Current  
2
Ids = 0.30 A, Vgs = Vds  
10.0  
gM  
Forward Transconductance  
Saturation Resistance  
Mho  
Vds = 10V, Vgs = 5V  
Rdson  
Ohm  
Vgs = 20V, Ids =20.00 A  
0.10  
70.00  
300.0  
15.0  
Idsat  
Ciss  
Crss  
Coss  
Saturation Current  
Amp  
pF  
Vgs = 20V, Vds = 10V  
28.0 Vgs = 0V, F = 1 MHz  
Common Source Input Capacitance  
Common Source Feedback Capacitance  
Common Source Output Capacitance  
Vds =  
Vds =  
Vds =  
28.0 Vgs = 0V, F = 1 MHz  
pF  
28.0 Vgs = 0V, F = 1 MHz  
200.0  
pF  
REVISION 08/27/2008  
POLYFET RF DEVICES  
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sell@polyfet.com URL:www.polyfet.com  
LY502  
POUT VS PIN GRAPH  
CAPACITANCE VS VOLTAGE  
LY502 IM3 vs PEP: Freq=100Mhz, 100kHz  
sep, Vds=28Vdc, Idq=4A  
L5B 2 DIE CAPACITANCE  
Coss  
1000  
100  
10  
-20  
-25  
-30  
-35  
-40  
-45  
-50  
Ciss  
Crss  
1
0
200  
250  
300  
350  
400  
450  
500  
4
8
12  
16  
20  
24  
28  
VDS IN VOLTS  
P EP in W a tts  
IV CURVE  
ID & GM VS VGS  
L5B 2 DIE ID & GM Vs VG  
L5B 2 DIE IV  
100.00  
10.00  
1.00  
60  
50  
40  
30  
20  
10  
0
Id  
gM  
0
2
4
6
8
10  
12  
vg=8v  
14  
16  
18  
20  
vg=12v  
0
2
4
6
8
10  
12  
14  
16  
18  
20  
VDS INVOLTS  
Vgs in Volts  
vg=2v  
Vg=4v  
Vg=6v  
0
Zin Zout  
PACKAGE DIMENSIONS IN INCHES  
Tolerance .XX +/-0.01 .XXX +/-.005 inches  
REVISION 08/27/2008  
POLYFET RF DEVICES  
1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sell@polyfet.com URL:www.polyfet.com  
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LIGITEK

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