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NVTR4503NT1G

型号：

NVTR4503NT1G

品牌：

ONSEMI[ ONSEMI ]

页数：

5 页

PDF大小：

97 K

下载PDF手册
NTR4503N, NVTR4503N  
Power MOSFET  
30 V, 2.5 A, Single N−Channel, SOT−23  
Features  
• Leading Planar Technology for Low Gate Charge / Fast Switching  
• 4.5 V Rated for Low Voltage Gate Drive  
• SOT−23 Surface Mount for Small Footprint (3 x 3 mm)  
www.onsemi.com  
• NV Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AEC−Q101 Qualified and  
PPAP Capable  
V
R
TYP  
I MAX  
D
(BR)DSS  
DS(on)  
85 mW @ 10 V  
30 V  
2.5 A  
• These Devices are Pb−Free and are RoHS Compliant  
105 mW @ 4.5 V  
Applications  
N−Channel  
• DC−DC Conversion  
• Load/Power Switch for Portables  
• Load/Power Switch for Computing  
D
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Parameter  
Drain−to−Source Voltage  
Symbol Value  
Unit  
V
G
V
DSS  
30  
Gate−to−Source Voltage  
V
20  
2.0  
V
GS  
S
Continuous Drain  
Current (Note 1)  
Steady T = 25°C  
I
A
A
D
State  
T = 85°C  
A
1.5  
MARKING DIAGRAM/  
PIN ASSIGNMENT  
t ≤ 10 s T = 25°C  
2.5  
A
3
3
Power Dissipation  
(Note 1)  
Steady T = 25°C  
P
0.73  
W
A
A
D
Drain  
State  
1
Continuous Drain  
Current (Note 2)  
Steady T = 25°C  
I
D
1.5  
1.1  
A
2
State  
TR3 MG  
T = 85°C  
A
G
SOT−23  
CASE 318  
STYLE 21  
Power Dissipation  
(Note 2)  
T = 25°C  
A
P
D
0.42  
W
1
Gate  
2
Source  
Pulsed Drain Current  
t = 10 ms  
p
I
10  
A
DM  
Operating Junction and Storage Temperature  
T ,  
−55 to  
150  
°C  
J
TR3  
M
= Specific Device Code  
= Date Code  
T
stg  
G
= Pb−Free Package  
Source Current (Body Diode)  
I
2.0  
4.0  
A
A
S
(Note: Microdot may be in either location)  
Peak Source Current  
(Diode Forward)  
t = 10 ms  
p
I
SM  
Lead Temperature for Soldering Purposes  
(1/8” from case for 10 s)  
T
L
260  
°C  
ORDERING INFORMATION  
†
Device  
NTR4503NT1G  
Package  
Shipping  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
SOT−23  
(Pb−Free)  
3000 / Tape & Reel  
THERMAL RESISTANCE RATINGS  
NVTR4503NT1G SOT−23  
(Pb−Free)  
3000 / Tape & Reel  
Parameter  
Symbol  
Max  
170  
100  
300  
Unit  
Junction−to−Ambient − Steady State (Note 1)  
Junction−to−Ambient − t < 10 s (Note 1)  
Junction−to−Ambient − Steady State (Note 2)  
R
R
R
°C/W  
q
q
q
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
JA  
JA  
JA  
1. Surface−mounted on FR4 board using 1 in sq pad size.  
2. Surface−mounted on FR4 board using the minimum recommended pad size.  
© Semiconductor Components Industries, LLC, 2003  
1
Publication Order Number:  
October, 2016 − Rev. 8  
NTR4503N/D  
 
NTR4503N, NVTR4503N  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
J
Parameter  
Symbol  
Test Conditions  
Min  
Typ  
Max  
Units  
OFF CHARACTERISTICS  
Drain−to−Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
V
V
= 0 V, I = 250 mA  
30  
36  
V
(BR)DSS  
GS  
D
I
V
= 0 V, V = 24 V  
1.0  
10  
mA  
DSS  
GS  
DS  
V
GS  
= 0 V, V = 24 V, T = 125°C  
DS J  
Gate−to−Source Leakage Current  
ON CHARACTERISTICS (Note 3)  
Gate Threshold Voltage  
I
V
= 0 V, V = "20 V  
"100  
nA  
GSS  
DS  
GS  
V
V
= V , I = 250 mA  
1.0  
1.75  
85  
3.0  
110  
140  
V
GS(TH)  
GS  
DS  
D
Drain−to−Source On−Resistance  
R
V
= 10 V, I = 2.5 A  
mW  
DS(on)  
GS  
D
V
= 4.5 V, I = 2.0 A  
105  
5.3  
GS  
DS  
D
Forward Transconductance  
CHARGES AND CAPACITANCES  
Input Capacitance  
g
V
= 4.5 V, I = 2.5 A  
S
FS  
D
C
135  
52  
pF  
iss  
V
= 0 V, f = 1.0 MHz,  
GS  
GS  
Output Capacitance  
C
oss  
V
DS  
= 15 V  
Reverse Transfer Capacitance  
Input Capacitance  
C
15  
rss  
C
130  
42  
250  
75  
pF  
nC  
iss  
V
= 0 V, f = 1.0 MHz,  
= 24 V  
Output Capacitance  
C
oss  
V
DS  
Reverse Transfer Capacitance  
Total Gate Charge  
C
13  
25  
rss  
Q
Q
3.6  
0.3  
0.6  
0.7  
1.9  
0.3  
0.6  
0.9  
7.0  
G(TOT)  
Threshold Gate Charge  
Gate−to−Source Charge  
Gate−to−Drain Charge  
Total Gate Charge  
Q
G(TH)  
V
GS  
= 10 V, V = 15 V,  
DS  
I
D
= 2.5 A  
Q
GS  
Q
GD  
nC  
G(TOT)  
Threshold Gate Charge  
Gate−to−Source Charge  
Gate−to−Drain Charge  
Q
G(TH)  
V
GS  
= 4.5 V, V = 24 V,  
DS  
I
D
= 2.5 A  
Q
GS  
GD  
Q
SWITCHING CHARACTERISTICS (Note 4)  
Turn−On Delay Time  
Rise Time  
t
5.8  
5.8  
14  
12  
10  
25  
5.0  
ns  
ns  
d(on)  
t
r
V
V
= 10 V, V = 15 V,  
DD  
GS  
I
= 1 A, R = 6 W  
D
G
Turn−Off Delay Time  
Fall Time  
t
t
t
d(off)  
t
f
1.6  
4.8  
6.7  
13.6  
1.8  
Turn−On Delay Time  
Rise Time  
d(on)  
t
r
= 10 V, V = 24 V,  
GS  
DD  
I
= 2.5 A, R = 2.5 W  
D
G
Turn−Off Delay Time  
Fall Time  
d(off)  
t
f
DRAIN−SOURCE DIODE CHARACTERISTICS  
Forward Diode Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
V
V
= 0 V, I = 2.0 A  
0.85  
9.2  
1.2  
V
SD  
RR  
GS  
S
t
ns  
nC  
V
GS  
= 0 V, I = 2.0 A,  
S
dI /dt = 100 A/ms  
S
Q
4.0  
RR  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.  
4. Switching characteristics are independent of operating junction temperatures.  
www.onsemi.com  
2
 
NTR4503N, NVTR4503N  
TYPICAL PERFORMANCE CURVES  
10  
8
10 V  
6 V  
5 V  
4.5 V  
4.2 V  
4 V  
3.8 V  
3.6 V  
V
≥ 10 V  
DS  
T = 25°C  
J
8
4
0
6
3.4 V  
3.2 V  
4
100°C  
3 V  
2.8 V  
2.6 V  
25°C  
2
0
T = −55°C  
J
0
1
2
3
4
2
3
4
5
6
V
GS  
, GATE−TO−SOURCE VOLTAGE (VOLTS)  
V
DS  
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)  
Figure 1. On−Region Characteristics  
Figure 2. Transfer Characteristics  
0.12  
0.3  
0.25  
0.2  
I
= 2.5 A  
D
T = 25°C  
J
T = 25°C  
J
0.11  
0.10  
0.09  
V
GS  
= 4.5 V  
0.15  
0.1  
0.08  
0.07  
0.05  
0
V
GS  
= 10 V  
4
2
3
5
6
2
3
4
5
6
7
8
9
10  
V
GS  
, GATE−TO−SOURCE VOLTAGE (VOLTS)  
I
D,  
DRAIN CURRENT (AMPS)  
Figure 4. On−Resistance vs. Drain Current and  
Gate Voltage  
Figure 3. On−Resistance vs. Gate−to−Source  
Voltage  
1000  
100  
10  
1.8  
V
GS  
= 0 V  
I
V
= 2.5 A  
D
= 10 V  
GS  
1.6  
T = 150°C  
J
1.4  
1.2  
1.0  
0.8  
0.6  
T = 100°C  
J
1
−50 −25  
0
25  
50  
75  
100  
125 150  
5
10  
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)  
DS  
15  
20  
25  
30  
T , JUNCTION TEMPERATURE (°C)  
V
J
Figure 5. On−Resistance Variation with  
Temperature  
Figure 6. Drain−to−Source Leakage Current  
vs. Voltage  
www.onsemi.com  
3
NTR4503N, NVTR4503N  
TYPICAL PERFORMANCE CURVES  
300  
200  
15  
10  
15  
V
GS  
= 0 V  
V
= 0 V  
T = 25°C  
J
DS  
V
DS  
C
iss  
Q
G
10  
C
rss  
V
I
GS  
5
0
100  
0
5
0
Q
Q
GD  
GS  
= 2.5 A  
D
C
oss  
T = 25°C  
J
10  
5
0
5
10  
15  
20  
25  
30  
0
1
2
3
4
V
GS  
V
DS  
Q , TOTAL GATE CHARGE (nC)  
G
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)  
Figure 8. Gate−to−Source and  
Drain−to−Source Voltage vs. Total Charge  
Figure 7. Capacitance Variation  
100  
3
V
I
= 24 V  
= 2.5 A  
V
GS  
= 0 V  
DD  
T = 25°C  
J
D
V
GS  
= 10 V  
t
d(off)  
2
t
f
10  
t
d(on)  
t
r
1
0
1
1
10  
R , GATE RESISTANCE (OHMS)  
100  
0.3  
0.5  
0.6  
0.7  
0.8  
0.9  
1
0.4  
V
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)  
G
SD  
Figure 9. Resistive Switching Time Variation  
vs. Gate Resistance  
Figure 10. Diode Forward Voltage vs. Current  
www.onsemi.com  
4
NTR4503N, NVTR4503N  
PACKAGE DIMENSIONS  
SOT−23 (TO−236)  
CASE 318−08  
ISSUE AR  
NOTES:  
D
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.  
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF  
THE BASE MATERIAL.  
0.25  
3
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,  
PROTRUSIONS, OR GATE BURRS.  
T
H
E
E
1
2
MILLIMETERS  
INCHES  
DIM  
A
A1  
b
c
D
E
e
L
L1  
MIN  
0.89  
0.01  
0.37  
0.08  
2.80  
1.20  
1.78  
0.30  
0.35  
2.10  
0°  
NOM  
1.00  
0.06  
0.44  
0.14  
2.90  
1.30  
1.90  
0.43  
0.54  
2.40  
−−−  
MAX  
MIN  
0.035  
0.000  
0.015  
0.003  
0.110  
0.047  
0.070  
0.012  
0.014  
0.083  
0°  
NOM  
0.039  
0.002  
0.017  
0.006  
0.114  
0.051  
0.075  
0.017  
0.021  
0.094  
−−−  
MAX  
0.044  
0.004  
0.020  
0.008  
0.120  
0.055  
0.080  
0.022  
0.027  
0.104  
10°  
L
1.11  
0.10  
0.50  
0.20  
3.04  
1.40  
2.04  
0.55  
0.69  
2.64  
10°  
3X  
b
L1  
VIEW C  
e
TOP VIEW  
A
H
E
T
c
A1  
SEE VIEW C  
SIDE VIEW  
STYLE 21:  
PIN 1. GATE  
2. SOURCE  
3. DRAIN  
END VIEW  
RECOMMENDED  
SOLDERING FOOTPRINT*  
3X  
2.90  
0.90  
3X  
0.95  
0.80  
PITCH  
DIMENSIONS: MILLIMETERS  
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage  
may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer  
is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of  
any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and  
do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s  
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized  
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices  
intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and  
hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees  
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was  
negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright  
laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
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USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
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ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
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For additional information, please contact your local  
Sales Representative  
◊
NTR4503N/D  
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