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SZESD7551N2T5G

型号:

SZESD7551N2T5G

品牌:

ONSEMI[ ONSEMI ]

页数:

5 页

PDF大小:

71 K

ESD7551, SZESD7551  
ESD Protection Diodes  
Micro−Packaged Diodes for ESD Protection  
The ESD7551 is designed to protect voltage sensitive components  
that require ultra−low capacitance from ESD and transient voltage  
events. Excellent clamping capability, low capacitance, low leakage,  
and fast response time, make these parts ideal for ESD protection on  
designs where board space is at a premium. Because of its low  
capacitance, the part is well suited for use in high frequency designs  
such as USB 2.0 high speed and antenna line applications.  
www.onsemi.com  
1
2
Cathode  
Anode  
Features  
Ultra−Low Capacitance (0.35 pF Max)  
Low Clamping Voltage  
Stand−off Voltage: 3.3 V  
Low Leakage  
MARKING  
DIAGRAM  
X2DFN2  
CASE 714AB  
E M  
G
Response Time is < 1 ns  
Low Dynamic Resistance < 1 W  
Protection for the Following Standards:  
E
M
= Specific Device Code  
= Date Code  
IEC 61000−4−2 (Level 4) & ISO 10605  
SZ Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AEC−Q101 Qualified and  
PPAP Capable  
ORDERING INFORMATION  
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Device  
Package  
Shipping  
Compliant  
ESD7551N2T5G  
X2DFN2  
(Pb−Free)  
8000 / Tape &  
Reel  
Typical Applications  
RF Signal ESD Protection  
SZESD7551N2T5G X2DFN2  
(Pb−Free)  
8000 / Tape &  
Reel  
RF Switching, PA, and Antenna ESD Protection  
Near Field Communications  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
Total Power Dissipation on FR−5 Board  
°P °  
250  
mW  
D
(Note 1) @ T = 25°C  
A
Thermal Resistance, Junction−to−Ambient  
R
400  
−55 to +150  
260  
°C/W  
°C  
q
JA  
Junction and Storage Temperature Range T , T  
J
stg  
Lead Solder Temperature − Maximum  
(10 Second Duration)  
T
L
°C  
IEC 61000−4−2 Contact  
IEC 61000−4−2 Air  
ISO 10605 150 pF/2 kW  
ISO 10605 330 pF/2 kW  
ISO 10605 330 pF/330 W  
ESD  
25  
25  
30  
30  
20  
kV  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. FR−5 = 1.0 x 0.75 x 0.62 in.  
See Application Note AND8308/D for further description of survivability specs.  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
November, 2016 − Rev. 0  
ESD7551/D  
 
ESD7551, SZESD7551  
ELECTRICAL CHARACTERISTICS  
(T = 25°C unless otherwise noted)  
A
I
I
PP  
Symbol  
Parameter  
I
Maximum Reverse Peak Pulse Current  
PP  
I
T
I
V
R
BR RWM  
V
Clamping Voltage @ I  
V
C
V
C
PP  
V
I
V
V
V
R
T
RWM BR C  
V
RWM  
Working Peak Reverse Voltage  
I
I
R
Maximum Reverse Leakage Current @ V  
RWM  
V
Breakdown Voltage @ I  
Test Current  
BR  
T
I
PP  
I
T
Bi−Directional TVS  
*See Application Note AND8308/D for detailed explanations of  
datasheet parameters.  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise specified)  
A
Parameter  
Symbol  
Conditions  
Min  
Typ  
Max  
3.3  
7.5  
50  
Unit  
V
Reverse Working Voltage  
Breakdown Voltage (Note 2)  
Reverse Leakage Current  
Clamping Voltage (Note 3)  
Clamping Voltage (Note 3)  
ESD Clamping Voltage  
Junction Capacitance  
V
RWM  
V
BR  
I = 1 mA  
5.0  
6.0  
V
T
I
R
V
RWM  
= 3.3 V  
< 1.0  
nA  
V
V
I
PP  
I
PP  
= 1 A  
10  
C
C
C
V
V
= 3 A  
13  
V
Per IEC61000−4−2  
C
V
R
V
R
= 0 V, f = 1 MHz  
= 0 V, f = 1 GHz  
0.25  
0.22  
0.35  
0.35  
pF  
J
Dynamic Resistance  
R
TLP Pulse  
0.55  
W
DYN  
2. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1.  
3. Non−repetitive current pulse at T = 25°C, per IEC61000−4−5 waveform.  
A
www.onsemi.com  
2
 
ESD7551, SZESD7551  
1.E−03  
1.E−04  
1.E−05  
1.E−06  
1.E−07  
1.E−08  
1.E−09  
1.E−10  
1.E−11  
1.E−12  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
−8  
−6  
−4  
−2  
0
2
4
6
8
−3  
−2  
−1  
0
1
2
3
V (V)  
VBias (V)  
Figure 1. IV Characteristics  
Figure 2. CV Characteristics  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
2
0
−2  
−4  
−6  
−8  
−10  
−12  
−14  
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10  
FREQUENCY (GHz)  
1.E+08  
1.E+09  
FREQUENCY (Hz)  
1.E+10  
Figure 3. RF Insertion Loss  
Figure 4. Capacitance over Frequency  
16  
8
6
4
2
0
−16  
−14  
−12  
−10  
−8  
8
6
4
2
0
14  
12  
10  
8
6
−6  
4
−4  
2
−2  
0
0
0
2
4
6
8
10  
12 14  
16 18  
20  
0
2
4
6
8
10  
12 14  
16 18  
20  
VC, VOLTAGE (V)  
VC, VOLTAGE (V)  
Figure 5. Positive TLP I−V Curve  
Figure 6. Negative TLP I−V Curve  
www.onsemi.com  
3
ESD7551, SZESD7551  
IEC61000−4−2 Waveform  
IEC 61000−4−2 Spec.  
I
peak  
First Peak  
Current  
(A)  
100%  
90%  
Test Volt-  
age (kV)  
Current at  
30 ns (A)  
Current at  
60 ns (A)  
Level  
1
2
3
4
2
4
6
8
7.5  
15  
4
8
2
4
6
8
I @ 30 ns  
22.5  
30  
12  
16  
I @ 60 ns  
10%  
t
P
= 0.7 ns to 1 ns  
Figure 7. IEC61000−4−2 Spec  
Oscilloscope  
ESD Gun  
TVS  
50 W  
Cable  
50 W  
Figure 8. Diagram of ESD Test Setup  
ESD Voltage Clamping  
at the device level. ON Semiconductor has developed a way  
to examine the entire voltage waveform across the ESD  
protection diode over the time domain of an ESD pulse in the  
form of an oscilloscope screenshot, which can be found on  
the datasheets for all ESD protection diodes. For more  
information on how ON Semiconductor creates these  
screenshots and how to interpret them please refer to  
AND8307/D.  
For sensitive circuit elements it is important to limit the  
voltage that an IC will be exposed to during an ESD event  
to as low a voltage as possible. The ESD clamping voltage  
is the voltage drop across the ESD protection diode during  
an ESD event per the IEC61000−4−2 waveform. Since the  
IEC61000−4−2 was written as a pass/fail spec for larger  
systems such as cell phones or laptop computers it is not  
clearly defined in the spec how to specify a clamping voltage  
100  
t
r
PEAK VALUE I  
@ 8 ms  
RSM  
90  
80  
70  
60  
50  
40  
30  
20  
PULSE WIDTH (t ) IS DEFINED  
P
AS THAT POINT WHERE THE  
PEAK CURRENT DECAY = 8 ms  
HALF VALUE I /2 @ 20 ms  
RSM  
t
P
10  
0
0
20  
40  
t, TIME (ms)  
60  
80  
Figure 9. 8 X 20 ms Pulse Waveform  
www.onsemi.com  
4
ESD7551, SZESD7551  
PACKAGE DIMENSIONS  
X2DFN2 1.0x0.6, 0.65P  
CASE 714AB  
ISSUE O  
NOTES:  
0.10  
C
1. DIMENSIONING AND TOLERANCING PER  
ASME Y14.5M, 1994.  
2. CONTROLLING DIMENSION: MILLIMETERS.  
3. EXPOSED COPPER ALLOWED AS SHOWN.  
A B  
E
D
PIN 1  
INDICATOR  
MILLIMETERS  
DIM MIN  
MAX  
0.40  
0.05  
0.55  
A
A1  
b
0.34  
−−−  
0.45  
0.05  
C
TOP VIEW  
D
E
e
1.00 BSC  
0.60 BSC  
0.65 BSC  
NOTE 3  
A
0.10  
0.10  
C
L
0.20  
0.30  
C
RECOMMENDED  
A1  
SEATING  
PLANE  
C
SOLDER FOOTPRINT*  
SIDE VIEW  
1.20  
2X  
2X  
e
0.47  
0.60  
b
e/2  
M
0.05  
C A B  
PIN 1  
1
DIMENSIONS: MILLIMETERS  
2X  
L
*For additional information on our Pb−Free strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
M
0.05  
C A B  
BOTTOM VIEW  
ON Semiconductor and  
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.  
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent  
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.  
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,  
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or  
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer  
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not  
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification  
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized  
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and  
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such  
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This  
literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81−3−5817−1050  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA  
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada  
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
ESD7551/D  
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