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IXYK100N65B3D1

型号：

IXYK100N65B3D1

品牌：

IXYS[ IXYS CORPORATION ]

页数：

7 页

PDF大小：

227 K

下载PDF手册
Advance Technical Information  
XPTTM 650V IGBT  
GenX3TM w/ Diode  
IXYK100N65B3D1  
IXYX100N65B3D1  
VCES = 650V  
IC110 = 100A  
VCE(sat)  1.85V  
tfi(typ) = 73ns  
Extreme Light Punch Through  
IGBT for 10-30kHz Switching  
TO-264 (IXYK)  
Symbol  
Test Conditions  
Maximum Ratings  
G
C
E
VCES  
VCGR  
TJ = 25°C to 175°C  
650  
650  
V
V
TJ = 25°C to 175°C, RGE = 1M  
Tab  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
PLUS247 (IXYX)  
IC25  
TC = 25°C (Chip Capability)  
Terminal Current Limit  
TC = 110°C  
225  
160  
100  
67  
A
A
A
A
ILRMS  
IC110  
IF110  
TC = 110°C  
ICM  
TC = 25°C, 1ms  
460  
A
G
C
Tab  
IA  
EAS  
TC = 25°C  
TC = 25°C  
50  
A
E
600  
mJ  
G = Gate  
C = Collector  
E
= Emitter  
SSOA  
VGE = 15V, TVJ = 150°C, RG = 3  
Clamped Inductive Load  
ICM = 200  
A
μs  
W
Tab = Collector  
(RBSOA)  
@VCE VCES  
tsc  
VGE = 15V, VCE = 360V, TJ = 150°C  
8
Features  
(SCSOA)  
RG = 10, Non Repetitive  
PC  
TC = 25°C  
830  
International Standard Packages  
Optimized for 10-30kHz Switching  
Square RBSOA  
Avalanche Rated  
Short Circuit Capability  
Anti-Parallel Ultra Fast Diode  
High Current Handling Capability  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
-55 ... +175  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
Md  
FC  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in  
N/lb  
20..120 /4.5..27  
Advantages  
Weight  
TO-264  
PLUS247  
10  
6
g
g
High Power Density  
Low Gate Drive Requirement  
Symbol  
Test Conditions  
Characteristic Values  
Applications  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
650  
3.5  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
6.0  
50 μA  
TJ = 150°C  
TJ = 150°C  
3 mA  
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
Lamp Ballasts  
VCE(sat)  
IC = 70A, VGE = 15V, Note 1  
1.53  
1.77  
1.85  
V
V
© 2014 IXYS CORPORATION, All Rights Reserved  
DS100633(10/14)  
IXYK100N65B3D1  
IXYX100N65B3D1  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-264 Outline  
Min.  
Typ.  
Max.  
gfs  
IC = 60A, VCE = 10V, Note 1  
30  
55  
S
Cies  
Coes  
Cres  
4740  
470  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
103  
Qg(on)  
Qge  
Qgc  
168  
30  
nC  
nC  
nC  
IC = 100A, VGE = 15V, VCE = 0.5 • VCES  
78  
td(on)  
tri  
Eon  
td(off)  
tfi  
29  
37  
ns  
ns  
mJ  
ns  
ns  
Inductive load, TJ = 25°C  
IC = 50A, VGE = 15V  
1.27  
150  
73  
VCE = 400V, RG = 3  
Terminals:  
1
= Gate  
2,4 = Collector  
Emitter  
3
=
Note 2  
Eoff  
1.37  
2.00 mJ  
td(on)  
tri  
28  
37  
ns  
ns  
Inductive load, TJ = 150°C  
Eon  
td(off)  
tfi  
IC = 50A, VGE = 15V  
2.35  
198  
160  
2.16  
mJ  
ns  
VCE = 400V, RG = 3  
ns  
Note 2  
Eoff  
mJ  
RthJC  
RthCS  
0.18 °C/W  
°C/W  
0.15  
PLUS247TM Outline  
Reverse Diode (FRED)  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
VF  
IF = 100A, VGE = 0V, Note 1  
1.7  
2.7  
V
TJ = 150C  
1.4  
V
IRM  
trr  
45  
A
IF = 100A, VGE = 0V, TJ = 150C,  
-diF/dt = 700A/sVR = 400V  
Terminals: 1 - Gate  
2 - Collector  
156  
ns  
3 - Emitter  
RthJC  
0.36 C/W  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
Notes:  
1. Pulse test, t 300μs, duty cycle, d 2%.  
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
ADVANCE TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
e
L
L1  
5.45 BSC  
19.81 20.32  
.215 BSC  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXYK100N65B3D1  
IXYX100N65B3D1  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
140  
120  
100  
80  
V
GE  
= 15V  
13V  
V
= 15V  
GE  
300  
250  
200  
150  
100  
50  
12V  
13V  
12V  
11V  
10V  
9V  
11V  
10V  
9V  
60  
40  
8V  
7V  
8V  
7V  
20  
0
0
0
0
7
0.5  
1
1.5  
2
2.5  
3
0
2
4
6
8
10  
12  
14  
16  
18  
175  
10  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
140  
120  
100  
80  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 15V  
GE  
V
= 15V  
GE  
13V  
12V  
11V  
10V  
9V  
I
= 140A  
C
8V  
I
= 70A  
60  
C
40  
7V  
6V  
20  
I
= 35A  
C
0
0.5  
1
1.5  
2
2.5  
3
3.5  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage vs.  
Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
160  
140  
120  
100  
80  
T
J
= 25ºC  
I
= 140A  
C
T
J
= 150ºC  
60  
25ºC  
- 40ºC  
70A  
40  
20  
35A  
0
8
9
10  
11  
12  
13  
14  
15  
4
5
6
7
8
9
VGE (V)  
VGE (V)  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXYK100N65B3D1  
IXYX100N65B3D1  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
16  
14  
12  
10  
8
T
J
= - 40ºC  
VCE = 325V  
C = 70A  
IG = 10mA  
I
25ºC  
150ºC  
6
4
2
0
0
20  
40  
60  
80  
100  
120  
140  
160  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
IC (A)  
QG (nC)  
Fig. 10. Reverse-Bias Safe Operating Area  
Fig. 9. Capacitance  
10,000  
1,000  
100  
200  
160  
120  
80  
C
ies  
C
oes  
C
res  
T
= 150ºC  
J
40  
R
= 3  
Ω
G
= 1 MHz  
5
f
dv / dt < 10V / ns  
10  
0
0
10  
15  
20  
25  
30  
35  
40  
100  
200  
300  
400  
500  
600  
700  
VCE (V)  
VCE (V)  
Fig. 11. Forward-Bias Safe Operating Area  
Fig. 12. Maximum Transient Thermal Impedance (IGBT)  
1000  
100  
10  
1
V
Limit  
CE(sat)  
0.1  
25µs  
100µs  
0.01  
1ms  
1
T
J
= 175ºC  
T
C
= 25ºC  
10ms  
Single Pulse  
DC  
0.001  
0.00001  
0.1  
0.0001  
0.001  
0.01  
0.1  
1
1
10  
100  
1000  
Pulse Width (s)  
VDS (V)  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYK100N65B3D1  
IXYX100N65B3D1  
Fig. 14. Inductive Switching Energy Loss vs.  
Collector Current  
Fig. 13. Inductive Switching Energy Loss vs.  
Gate Resistance  
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
14  
12  
10  
8
E
T
E
E
R
E
on - - - -  
on - - - -  
off  
off  
= 150ºC , V = 15V  
= 3  
V
= 15V  
GE  
Ω ,  
J
GE  
G
V
= 400V  
V
CE  
= 400V  
CE  
I
= 100A  
C
T
J
= 150ºC  
6
4
I
= 50A  
C
T
J
= 25ºC  
2
0
50  
55  
60  
65  
70  
75  
80  
85  
90  
95  
100  
3
6
9
12  
15  
18  
21  
24  
27  
30  
33  
IC (A)  
RG (Ω)  
Fig. 15. Inductive Switching Energy Loss vs.  
Junction Temperature  
Fig. 16. Inductive Turn-off Switching Times vs.  
Gate Resistance  
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
240  
800  
700  
600  
500  
400  
300  
200  
100  
0
E
E
on - - - -  
off  
t f i  
t
d(off) - - - -  
220  
200  
180  
160  
140  
120  
100  
80  
R
= 3  
VGE = 15V  
Ω ,  
G
T
J
= 150ºC, V = 15V  
GE  
VCE = 400V  
V
= 400V  
CE  
IC = 100A  
I
= 50A  
C
I
= 100A  
C
IC = 50A  
3
6
9
12  
15  
18  
21  
24  
27  
30  
33  
25  
50  
75  
100  
125  
150  
RG (Ω)  
TJ (ºC)  
Fig. 17. Inductive Turn-off Switching Times vs.  
Collector Current  
Fig. 18. Inductive Turn-off Switching Times vs.  
Junction Temperature  
220  
200  
180  
160  
140  
120  
100  
80  
210  
220  
200  
180  
160  
140  
120  
100  
80  
220  
210  
200  
190  
180  
170  
160  
150  
140  
130  
120  
t f i  
t
d(off) - - - -  
t f i  
t
d(off) - - - -  
200  
190  
180  
170  
160  
150  
140  
130  
120  
R
G
= 3 , V = 15V  
Ω
GE  
R
G
= 3 , V = 15V  
Ω
GE  
V
= 400V  
CE  
V
= 400V  
CE  
I
= 50A  
C
T
J
= 150ºC  
I
= 100A  
C
60  
T
J
= 25ºC  
70  
60  
40  
40  
20  
50  
55  
60  
65  
75  
80  
85  
90  
95  
100  
25  
50  
75  
100  
125  
150  
IC (A)  
TJ (ºC)  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXYK100N65B3D1  
IXYX100N65B3D1  
Fig. 20. Inductive Turn-on Switching Times vs.  
Fig. 19. Inductive Turn-on Switching Times vs.  
Gate Resistance  
Collector Current  
td(on)  
- - - -  
140  
120  
100  
80  
38  
36  
34  
32  
30  
28  
26  
240  
200  
160  
120  
80  
180  
150  
120  
90  
t r i  
t r i  
t
d(on) - - - -  
R
G
= 3 , V = 15V  
Ω
GE  
T
J
= 150ºC, V = 15V  
GE  
V
= 400V  
CE  
V
= 400V  
CE  
T
J
= 25ºC  
I
= 100A  
C
60  
60  
T
J
= 150ºC  
I
= 50A  
C
40  
40  
30  
20  
0
0
50  
55  
60  
65  
70  
75  
80  
85  
90  
95  
100  
3
6
9
12  
15  
18  
21  
24  
27  
30  
33  
IC (A)  
RG (Ω)  
Fig. 21. Inductive Turn-on Switching Times vs.  
Junction Temperature  
Fig. 22. Maximum Peak Load Current vs. Frequency  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
160  
140  
120  
100  
80  
40  
38  
36  
34  
32  
30  
28  
26  
24  
t r i  
t
d(on) - - - -  
R
G
= 3 , V = 15V  
Ω
GE  
V
= 400V  
CE  
I
= 100A  
C
Triangular Wave  
T
= 150ºC  
= 75ºC  
J
60  
T
C
V
V
= 400V  
= 15V  
CE  
GE  
40  
Square Wave  
I
= 50A  
C
R
G
= 3ꢀ  
20  
D = 0.5  
0
25  
50  
75  
100  
125  
150  
10  
100  
1,000  
TJ (ºC)  
(kH)  
fmax  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYK100N65B3D1  
IXYX100N65B3D1  
Fig. 23. Diode Forward Characteristics  
Fig. 24. Reverse Recovery Charge vs. -diF/dt  
200  
180  
160  
140  
120  
100  
80  
3.8  
3.6  
3.4  
3.2  
3.0  
2.8  
2.6  
2.4  
2.2  
2.0  
1.8  
I
F
= 100A  
T = 150ºC  
J
75A  
V
= 400V  
R
50A  
T
J
= 150ºC  
T
J
= 25ºC  
60  
40  
20  
0
200  
300  
400  
500  
600  
700  
800  
900  
1000  
0
0.5  
1
1.5  
2
2.5  
3
-diF/ dt (A/µs)  
VF (V)  
Fig. 26. Reverse Recovery Time vs. -diF/dt  
Fig. 25. Reverse Recovery Current vs. -diF/dt  
210  
200  
190  
180  
170  
160  
150  
140  
130  
50  
45  
40  
35  
30  
25  
20  
15  
I
F
= 100A  
75A  
T = 150ºC  
J
T
= 150ºC  
J
V
= 400V  
R
50A  
V
= 400V  
R
I
F
= 100A  
75A  
50A  
200  
300  
400  
500  
600  
700  
800  
900  
1000  
200  
300  
400  
500  
600  
700  
800  
900  
1000  
-diF/dt (A/µs)  
diF/dt (A/µs)  
I
Fig. 27. Dynamic Parameters QRR, RR vs.  
Fig. 28. Maximum Transient Thermal Impedance (Diode)  
Junction Temperature  
1
1.2  
1
V
= 400V  
R
I
= 100A  
F
-dI /dt = 700A/µs  
F
0.8  
0.6  
0.4  
0.2  
0
0.1  
K
I
RR  
F
K
Q
RR  
F
0.01  
0
20  
40  
60  
80  
100  
120  
140  
160  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
TJ (ºC)  
Pulse Width (s)  
© 2014 IXYS CORPORATION, All Rights Reserved  
IXYS REF: IXY_100N65B3(7D-Y42) 10-14-14  
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 		IXYF30N450 [ Insulated Gate Bipolar Transistor, ] 5 页

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