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IXYK200N65B3

型号：

IXYK200N65B3

品牌：

IXYS[ IXYS CORPORATION ]

页数：

6 页

PDF大小：

215 K

下载PDF手册
Advance Technical Information  
XPTTM 650V IGBT  
GenX3TM  
IXYK200N65B3  
IXYX200N65B3  
VCES = 650V  
IC110 = 200A  
VCE(sat)  1.70V  
tfi(typ) = 157ns  
Extreme Light Punch Through  
IGBT for 10-30kHz Switching  
TO-264 (IXYK)  
Symbol  
Test Conditions  
Maximum Ratings  
G
C
E
VCES  
VCGR  
TJ = 25°C to 175°C  
650  
650  
V
V
TJ = 25°C to 175°C, RGE = 1M  
Tab  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
PLUS247 (IXYX)  
IC25  
ILRMS  
IC110  
TC = 25°C (Chip Capability)  
Terminal Current Limit  
TC = 110°C  
410  
160  
200  
A
A
A
ICM  
TC = 25°C, 1ms  
1100  
A
G
IA  
EAS  
TC = 25°C  
TC = 25°C  
100  
1
A
J
C
Tab  
E
SSOA  
VGE = 15V, TVJ = 150°C, RG = 0  
Clamped Inductive Load  
ICM = 200  
A
μs  
W
G = Gate  
C = Collector  
E
= Emitter  
(RBSOA)  
@VCE VCES  
Tab = Collector  
tsc  
VGE = 15V, VCE = 400V, TJ = 150°C  
8
Features  
(SCSOA)  
RG = 10, Non Repetitive  
PC  
TC = 25°C  
1560  
International Standard Packages  
Optimized for 10-30kHz Switching  
Square RBSOA  
Avalanche Rated  
Short Circuit Capability  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
-55 ... +175  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
High Current Handling Capability  
Md  
FC  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in  
N/lb  
Advantages  
20..120 /4.5..27  
High Power Density  
Low Gate Drive Requirement  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Applications  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
650  
3.5  
Typ.  
Max.  
Power Inverters  
UPS  
Motor Drives  
SMPS  
PFC Circuits  
Battery Chargers  
Welding Machines  
Lamp Ballasts  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
6.0  
25 μA  
TJ = 150°C  
2 mA  
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
VCE(sat)  
IC = 100A, VGE = 15V, Note 1  
TJ = 150°C  
1.40  
1.56  
1.70  
V
V
© 2015 IXYS CORPORATION, All Rights Reserved  
DS100697(12/15)  
IXYK200N65B3  
IXYX200N65B3  
Symbol Test Conditions  
(TJ = 25°C Unless Otherwise Specified)  
Characteristic Values  
TO-264 Outline  
Min.  
Typ.  
Max.  
gfs  
IC = 60A, VCE = 10V, Note 1  
VCE = 25V, VGE = 0V, f = 1MHz  
Gate Input Resistance  
46  
78  
S
Cies  
Coes  
Cres  
10.9  
554  
173  
nF  
pF  
pF  
RGi  
7
Qg(on)  
Qge  
Qgc  
340  
84  
nC  
nC  
nC  
IC = 200A, VGE = 15V, VCE = 0.5 • VCES  
136  
td(on)  
tri  
Eon  
td(off)  
tfi  
60  
108  
5.00  
370  
157  
4.00  
ns  
ns  
Inductive load, TJ = 25°C  
IC = 100A, VGE = 15V  
Terminals:  
1
= Gate  
2,4 = Collector  
Emitter  
mJ  
ns  
3
=
VCE = 400V, RG = 0  
ns  
Note 2  
Eoff  
mJ  
td(on)  
tri  
Eon  
td(off)  
tfi  
60  
110  
6.36  
470  
230  
5.60  
ns  
ns  
Inductive load, TJ = 150°C  
IC = 100A, VGE = 15V  
mJ  
ns  
VCE = 400V, RG = 0  
ns  
Note 2  
Eoff  
mJ  
RthJC  
RthCS  
0.096 °C/W  
°C/W  
0.15  
PLUS247TM Outline  
Notes:  
1. Pulse test, t 300μs, duty cycle, d 2%.  
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.  
Terminals: 1 - Gate  
2 - Collector  
3 - Emitter  
Dim.  
Millimeter  
Min. Max.  
Inches  
Min. Max.  
ADVANCE TECHNICAL INFORMATION  
A
A1  
A2  
4.83  
2.29  
1.91  
5.21  
2.54  
2.16  
.190 .205  
.090 .100  
.075 .085  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
b
b1  
b2  
1.14  
1.91  
2.92  
1.40  
2.13  
3.12  
.045 .055  
.075 .084  
.115 .123  
C
D
E
0.61  
20.80 21.34  
15.75 16.13  
0.80  
.024 .031  
.819 .840  
.620 .635  
e
5.45 BSC  
.215 BSC  
L
L1  
19.81 20.32  
.780 .800  
.150 .170  
3.81  
4.32  
Q
R
5.59  
4.32  
6.20  
4.83  
.220 0.244  
.170 .190  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXYK200N65B3  
IXYX200N65B3  
Fig. 1. Output Characteristics @ TJ = 25ºC  
Fig. 2. Extended Output Characteristics @ TJ = 25ºC  
300  
250  
200  
150  
100  
50  
350  
300  
250  
200  
150  
100  
50  
V
= 15V  
GE  
V
= 15V  
11V  
GE  
10V  
12V  
11V  
10V  
9V  
9V  
8V  
8V  
7V  
6V  
7V  
6V  
0
0
0
0.5  
1
1.5  
2
2.5  
3
0
1
2
3
4
5
6
7
8
9
10  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150ºC  
300  
250  
200  
150  
100  
50  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
V
= 15V  
GE  
V
= 15V  
GE  
13V  
11V  
10V  
I
= 300A  
C
9V  
8V  
I
= 200A  
C
7V  
I
= 100A  
C
6V  
0
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
TJ - Degrees Centigrade  
VCE - Volts  
Fig. 5. Collector-to-Emitter Voltage vs.  
Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
6.0  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
250  
200  
150  
100  
50  
T
= 25ºC  
J
T
= 150ºC  
25ºC  
J
- 40ºC  
I
= 300A  
200A  
C
100A  
0
7
8
9
10  
11  
12  
13  
14  
15  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
VGE - Volts  
VGE - Volts  
© 2015 IXYS CORPORATION, All Rights Reserved  
IXYK200N65B3  
IXYX200N65B3  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
180  
160  
140  
120  
100  
80  
16  
14  
12  
10  
8
T
J
= - 40ºC  
VCE = 325V  
C = 200A  
IG = 10mA  
I
25ºC  
150ºC  
6
60  
4
40  
2
20  
0
0
0
40  
80  
120  
160  
200  
240  
280  
0
50  
100  
150  
200  
250  
300  
350  
IC - Amperes  
QG - NanoCoulombs  
Fig. 10. Reverse-Bias Safe Operating Area  
Fig. 9. Capacitance  
100,000  
10,000  
1,000  
100  
200  
160  
120  
80  
= 1 MHz  
f
C
ies  
C
C
oes  
res  
T
= 150ºC  
J
40  
R
= 0  
Ω
G
dv / dt < 10V / ns  
0
100  
200  
300  
400  
500  
600  
700  
0
5
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 11. Forward-Bias Safe Operating Area  
Fig. 12. Maximum Trasient Thermal Impedance  
aaa  
10000  
1000  
100  
10  
0.3  
0.1  
V
Limit  
CE(sat)  
25µs  
0.01  
0.001  
100µs  
1ms  
T = 175ºC  
J
1
T
C
= 25ºC  
Single Pulse  
10ms  
1000  
0.1  
0.0001  
1
10  
100  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
VCE - Volts  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYK200N65B3  
IXYX200N65B3  
Fig. 13. Inductive Switching Energy Loss vs.  
Gate Resistance  
Fig. 14. Inductive Switching Energy Loss vs.  
Collector Current  
6
5
4
3
2
1
0
7
6
5
4
3
2
1
11  
9
11  
9
E
E
on - - - -  
T
J
= 150ºC  
off  
E
R
E
on - - - -  
off  
T
J
= 150ºC , V = 15V  
GE  
= 0  
V
= 15V  
GE  
Ω ,  
G
V
= 400V  
CE  
V
= 400V  
CE  
I
= 100A  
C
7
7
T
J
= 25ºC  
5
5
3
3
I
= 50A  
C
1
1
50  
55  
60  
65  
70  
75  
80  
85  
90  
95  
100  
0
5
10  
15  
20  
25  
30  
RG - Ohms  
IC - Amperes  
Fig. 16. Inductive Turn-off Switching Times vs.  
Gate Resistance  
Fig. 15. Inductive Switching Energy Loss vs.  
Junction Temperature  
8
7
6
5
4
3
2
1
8
7
6
5
4
3
2
1
420  
380  
340  
300  
260  
220  
180  
140  
1600  
1400  
1200  
1000  
800  
E
R
E
on - - - -  
off  
t f i  
t
d(off) - - - -  
= 0  
VGE = 15V  
Ω ,  
G
VGE  
T
J
= 150ºC,  
= 15V  
VCE = 400V  
V
= 400V  
= 50A  
CE  
I
= 100A  
C
I
C
I
= 100A  
C
IC = 50A  
600  
400  
200  
0
5
10  
15  
20  
25  
30  
25  
50  
75  
100  
125  
150  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Inductive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 17. Inductive Turn-off Switching Times vs.  
Collector Current  
340  
300  
260  
220  
180  
140  
100  
580  
540  
500  
460  
420  
380  
340  
380  
340  
300  
260  
220  
180  
140  
100  
580  
540  
500  
460  
420  
380  
340  
300  
t f i  
t
d(off) - - - -  
t f i  
t
d(off) - - - -  
R
G
= 0 , V = 15V  
Ω
GE  
R
G
= 0 , V = 15V  
Ω
GE  
V
= 400V  
CE  
V
= 400V  
CE  
T = 150ºC  
J
I = 50A  
C
I
= 100A  
C
T = 25ºC  
J
50  
55  
60  
65  
70  
75  
80  
85  
90  
95  
100  
25  
50  
75  
100  
125  
150  
IC - Amperes  
TJ - Degrees Centigrade  
© 2015 IXYS CORPORATION, All Rights Reserved  
IXYK200N65B3  
IXYX200N65B3  
Fig. 19. Inductive Turn-on Switching Times vs.  
Gate Resistance  
Fig. 20. Inductive Turn-on Switching Times vs.  
Collector Current  
td(on)  
- - - -  
200  
180  
160  
140  
120  
100  
80  
240  
220  
200  
180  
160  
140  
120  
100  
80  
120  
110  
100  
90  
66  
64  
62  
60  
58  
56  
54  
52  
50  
t r i  
t
d(on) - - - -  
t r i  
T
J
= 150ºC, V = 15V  
GE  
I
= 100A  
R
G
= 0 , V = 15V  
C
Ω
GE  
V
= 400V  
CE  
V
= 400V  
CE  
T
J
= 25ºC  
I
= 50A  
C
80  
T
J
= 150ºC  
70  
60  
60  
40  
50  
20  
60  
0
40  
40  
0
5
10  
15  
20  
25  
30  
50  
55  
60  
65  
70  
75  
80  
85  
90  
95  
100  
RG - Ohms  
IC - Amperes  
Fig. 21. Inductive Turn-on Switching Times vs.  
Junction Temperature  
140  
120  
100  
80  
70  
66  
62  
58  
54  
50  
t r i  
t
d(on) - - - -  
R
G
= 0 , V = 15V  
Ω
GE  
V
= 400V  
CE  
I
I
= 100A  
C
= 50A  
C
60  
40  
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS REF: IXY_200N65B3(81) 12-21-15  
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