找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

DXTN26070CY

型号:

DXTN26070CY

品牌:

DIODES[ DIODES INCORPORATED ]

页数:

7 页

PDF大小:

249 K

DXTN26070CY  
70V NPN POWER SWITCHING TRANSISTOR IN SOT89  
Mechanical Data  
Features  
BVCEO > 70V  
C = 2A High Continuous Collector Current  
Case: SOT89  
I
Case Material: Molded Plastic, “Green” Molding Compound  
UL Flammability Rating 94V-0  
ICM Up to 4A Peak Pulse Current  
2W Power Dissipation  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Finish - Matte Tin Plated Lead.  
Solderable per MIL-STD-202, Method 208  
Weight: 0.052 grams (Approximate)  
Low Saturation Voltage <300 mV @ 1A  
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  
Halogen and Antimony Free. “Green” Device (Note 3)  
SOT89  
C
E
B
C
B
C
E
Top View  
Device Symbol  
Top View  
Pin-Out  
Ordering Information (Note 4)  
Product  
DXTN26070CY-13  
Compliance  
Standard  
Marking  
1T8  
Reel size (inches)  
Tape width (mm)  
Quantity per reel  
2,500  
13  
12  
Notes:  
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.  
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green"  
and Lead-Free.  
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.  
Marking Information  
SOT89  
1T8 = Product Type Marking Code  
YWW = Date Code Marking  
Y = Last Digit of Year (ex: 5 = 2015)  
WW = Week Code 01 - 52  
DXTN26070CY  
Datasheet Number: DS37664 Rev.1 - 2  
1 of 7  
www.diodes.com  
January 2015  
© Diodes Incorporated  
DXTN26070CY  
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
Unit  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
150  
70  
7
V
V
Continuous Collector Current  
Peak Pulse Current (Note 5)  
2
A
4
A
ICM  
Note 5.  
Measured under pulsed conditions. Pulse width = 300µs. Duty cycle 2%.  
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Symbol  
Value  
Unit  
(Note 6)  
(Note 7)  
(Note 8)  
(Note 9)  
(Note 6)  
(Note 7)  
(Note 8)  
(Note 9)  
(Note 10)  
0.7  
1.0  
1.5  
2.0  
178  
125  
83  
Power Dissipation  
W
PD  
Thermal Resistance, Junction to Ambient Air  
Rθ  
JA  
°C/W  
°C  
60  
Thermal Resistance, Junction to Lead  
22  
Rθ  
JL  
Operating and Storage Temperature Range  
-55 to +150  
T
J, TSTG  
ESD Ratings (Note 11)  
Characteristic  
Electrostatic Discharge - Human Body Model  
Electrostatic Discharge - Machine Model  
Symbol  
ESD HBM  
ESD MM  
Value  
4,000  
400  
Unit  
V
V
JEDEC Class  
3A  
C
Notes:  
6. For a device mounted with the exposed collector pad on minimum recommended pad layout (MRP) 1oz copper that is on a single-sided  
1.6mm FR4 PCB; device is measured under still air conditions whilst operating in a steady-state.  
7. Same as Note 5, except the device is mounted with the exposed collector pad on 15mm x 15mm 1oz copper.  
8. Same as Note 5, except the device is mounted with the exposed collector pad on 25mm x 25mm 1oz copper.  
9. Same as Note 5, except the device is mounted with the exposed collector pad on 50mm x 50mm 1oz copper.  
10. Thermal resistance from junction to solder-point (on the exposed collector pad).  
11. Refer to JEDEC specification JESD22-A114 and JESD22-A115.  
Thermal Characteristics and Derating Information  
140.0  
3
2
1
0
TA=25°C  
2oz copper  
1oz copper  
120.0  
100.0  
80.0  
1oz copper  
60.0  
40.0  
2oz copper  
1500  
0
500  
1000  
2000  
2500  
0
500  
1000  
1500  
2000  
2500  
Copper Area (sqmm)  
Copper Area (sqmm)  
DXTN26070CY  
Datasheet Number: DS37664 Rev.1 - 2  
2 of 7  
www.diodes.com  
January 2015  
© Diodes Incorporated  
DXTN26070CY  
Thermal Characteristics and Derating Information (continued)  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
15mm x 15mm 1oz FR4 PCB  
MRP 1oz FR4 PCB  
0
20  
40 60 80 100 120 140 160  
Temperature (°C)  
Tem6p0erature 1(°0C0) 120  
0
20  
40  
80  
140 160  
Derating Curve  
Derating Curve  
130  
120  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
10  
100  
10  
1
15mm x 15mm 1oz FR4 PCB  
15mm x 15mm 1oz FR4 PCB  
Single Pulse  
TA=25°C  
D=0.5  
D=0.2  
Single Pulse  
D=0.05  
D=0.1  
0
100µ 1m 10m 100m  
1
10  
100  
1k  
100µ 1m 10m 100m  
1
10  
100  
1k  
Pulse Width (s)  
Pulse Width (s)  
Transient Thermal Impedance  
Pulse Power Dissipation  
180  
160  
140  
120  
100  
80  
100  
10  
1
MRP 1oz FR4 PCB  
MRP 1oz FR4 PCB  
Single Pulse  
TA=25°C  
D=0.5  
60  
Single Pulse  
D=0.05  
D=0.2  
40  
20  
D=0.1  
1
0
100µ 1m 10m 100m  
10  
100  
1k  
100µ 1m 10m 100m  
1
10  
100  
1k  
Pulse Width (s)  
Pulse Width (s)  
Transient Thermal Impedance  
Pulse Power Dissipation  
DXTN26070CY  
Datasheet Number: DS37664 Rev.1 - 2  
3 of 7  
www.diodes.com  
January 2015  
© Diodes Incorporated  
DXTN26070CY  
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
OFF CHARACTERISTICS  
150  
70  
7
-
-
-
-
-
V
V
V
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage (Note 12)  
Emitter-Base Breakdown Voltage  
BVCBO  
BVCEO  
BVEBO  
IC = 100 µA  
IC = 1mA  
8.2  
IE = 100 µA  
-
-
<1  
-
50  
10  
V
CB = 96V  
nA  
µA  
Collector-Base Cutoff Current  
ICBO  
IEBO  
VCB = 96V, TA = +100°C  
VEB = 5.6V  
-
<1  
20  
Emitter-Base Cutoff Current  
nA  
ON CHARACTERISTICS (Note 12)  
120  
150  
200  
260  
290  
300  
-
-
-
-
-
IC = 1mA, VCE = 5V  
IC = 10mA, VCE = 2V  
Static Forward Current Transfer Ratio  
hFE  
500  
I
C = 100mA, VCE = 2V  
-
-
-
150  
780  
950  
300  
mV  
mV  
mV  
Collector-Emitter Saturation Voltage  
Base-Emitter Turn-On Voltage  
Base-Emitter Saturation Voltage  
SMALL SIGNAL CHARACTERISTICS  
Output Capacitance  
VCE(sat)  
VBE(on)  
VBE(sat)  
IC = 1A, IB = 100mA  
IC = 1A, VCE = 5V  
IC = 1A, IB = 50mA  
-
-
-
10  
-
-
pF  
Cobo  
fT  
VCB = 10V, f = 1MHz  
VCE = 10V, IC = 50mA,  
f = 100MHz  
Transition Frequency  
150  
220  
MHz  
Turn-On Time  
Delay Time  
Rise Time  
-
-
-
-
-
-
63  
33  
-
-
-
-
-
-
ton  
td  
tr  
30  
VCC=10V, IC =0.5A  
IB2 = -IB1 = 25mA  
ns  
Turn-Off Time  
Storage Time  
Fall Time  
420  
380  
40  
toff  
ts  
tf  
Note:  
12. Measured under pulsed conditions. Pulse width 300µs. Duty cycle 2%.  
DXTN26070CY  
Datasheet Number: DS37664 Rev.1 - 2  
4 of 7  
www.diodes.com  
January 2015  
© Diodes Incorporated  
DXTN26070CY  
Typical Characteristics (@TA = +25°C, unless otherwise specified.)  
1
Tamb=25°C  
IC/IB=10  
0.4  
0.3  
0.2  
0.1  
0.0  
150°C  
100°C  
IC/IB=50  
IC/IB=25  
100m  
25°C  
IC/IB=10  
IC/IB=20  
-55°C  
10m  
IC10mCollect1o0r0Cmurrent (A)  
IC Collector Current (A)  
1m  
1
10m  
100m  
1
VCE(sat) v IC  
VCE(sat) v IC  
500  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
IC/IB=10  
VCE=5V  
150°C  
100°C  
-55°C  
25°C  
400  
300  
200  
100  
0
25°C  
150°C  
100°C  
-55°C  
1m  
1
10  
1m  
1
IC10mCollec1to0r0mCurrent (A)  
IC10mCollect1o0r0Cmurrent (A)  
hFE v IC  
VBE(sat) v IC  
30  
25  
20  
15  
10  
5
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
VCE=5V  
f = 1MHz  
-55°C  
25°C  
Cobo  
150°C  
100°C  
1
0
10m  
100m  
1
10  
IC10mCollect1o0r0Cmurrent (A)  
1m  
Voltage(V)  
Capacitance v Voltage  
VBE(on) v IC  
DXTN26070CY  
Datasheet Number: DS37664 Rev.1 - 2  
5 of 7  
www.diodes.com  
January 2015  
© Diodes Incorporated  
DXTN26070CY  
Package Outline Dimensions  
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.  
D1  
c
SOT89  
Dim Min Max  
Typ  
1.50  
0.56  
0.48  
0.38  
4.50  
H
E
A
B
1.40 1.60  
0.50 0.62  
B1 0.42 0.54  
c
D
0.35 0.43  
4.40 4.60  
B1  
L
D1 1.62 1.83 1.733  
B
D2 1.61 1.81  
2.40 2.60  
E2 2.05 2.35  
1.71  
2.50  
2.20  
1.50  
4.10  
2.78  
1.05  
E
e
D2  
e
-
-
H
3.95 4.25  
H1 2.63 2.93  
L
L1  
Z
0.90 1.20  
0.427 REF  
0.30 REF  
H1  
E2  
A
All Dimensions in mm  
L1  
D
z
Suggested Pad Layout  
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.  
X2  
Value  
(in mm)  
Dimensions  
Y3  
C
G
X
X1  
X2  
Y
Y1  
Y2  
Y3  
Y4  
1.500  
0.244  
0.580  
0.760  
1.933  
1.730  
3.030  
1.500  
0.770  
4.530  
Y1  
Y4  
X
G
Y
Y2  
C
X1  
DXTN26070CY  
Datasheet Number: DS37664 Rev.1 - 2  
6 of 7  
www.diodes.com  
January 2015  
© Diodes Incorporated  
DXTN26070CY  
IMPORTANT NOTICE  
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE  
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the  
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or  
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume  
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated  
website, harmless against all damages.  
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.  
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and  
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or  
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings  
noted herein may also be covered by one or more United States, international or foreign trademarks.  
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the  
final and determinative format released by Diodes Incorporated.  
LIFE SUPPORT  
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express  
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  
A. Life support devices or systems are devices or systems which:  
1. are intended to implant into the body, or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  
labeling can be reasonably expected to result in significant injury to the user.  
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  
failure of the life support device or to affect its safety or effectiveness.  
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and  
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any  
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related  
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its  
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.  
Copyright © 2015, Diodes Incorporated  
www.diodes.com  
DXTN26070CY  
Datasheet Number: DS37664 Rev.1 - 2  
7 of 7  
www.diodes.com  
January 2015  
© Diodes Incorporated  
厂商 型号 描述 页数 下载

RADIOMETRIX

DXT-433-TX2A [ DX series remote control boards ] 7 页

RADIOMETRIX

DXT-434.650-NTX2B [ DX series remote control boards ] 7 页

DIODES

DXT2010P5 60V NPN中功率晶体管PowerDI®5[ 60V NPN MEDIUM POWER TRANSISTOR PowerDI®5 ] 7 页

DIODES

DXT2010P5-13 60V NPN中功率晶体管PowerDI®5[ 60V NPN MEDIUM POWER TRANSISTOR PowerDI®5 ] 7 页

DIODES

DXT2011P5 100V NPN低SAT中功率晶体管PowerDI®5[ 100V NPN LOW SAT MEDIUM POWER TRANSISTOR PowerDI®5 ] 7 页

DIODES

DXT2011P5-13 100V NPN低SAT中功率晶体管PowerDI®5[ 100V NPN LOW SAT MEDIUM POWER TRANSISTOR PowerDI®5 ] 7 页

DIODES

DXT2012P5 60V PNP中功率晶体管PowerDI®5[ 60V PNP MEDIUM POWER TRANSISTOR PowerDI®5 ] 7 页

DIODES

DXT2012P5-13 60V PNP中功率晶体管PowerDI®5[ 60V PNP MEDIUM POWER TRANSISTOR PowerDI®5 ] 7 页

DIODES

DXT2013P5 100V PNP中功率晶体管PowerDI®5[ 100V PNP MEDIUM POWER TRANSISTOR PowerDI®5 ] 7 页

DIODES

DXT2013P5-13 100V PNP中功率晶体管PowerDI®5[ 100V PNP MEDIUM POWER TRANSISTOR PowerDI®5 ] 7 页

PDF索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

0.188888s