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IXYX25N250CV1HV

型号：

IXYX25N250CV1HV

品牌：

IXYS[ IXYS CORPORATION ]

页数：

8 页

PDF大小：

252 K

下载PDF手册
Preliminary Technical Information  
VCES = 2500V  
IC110 = 25A  
VCE(sat)  4.0V  
tfi(typ) = 246ns  
High Voltage  
XPTTM IGBT  
w/ Diode  
IXYX25N250CV1  
IXYX25N250CV1HV  
PLUS247 (IXYX)  
Symbol  
Test Conditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 175°C  
2500  
2500  
V
V
G
TJ = 25°C to 175°C, RGE = 1M  
C
Tab  
E
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
TO-247PLUS-HV  
(IXYX...HV)  
IC25  
IC110  
IF110  
TC = 25°C  
TC = 110°C  
TC = 110°C  
95  
25  
30  
A
A
A
ICM  
TC = 25°C, 1ms  
235  
A
SSOA  
(RBSOA)  
VGE = 15V, TVJ = 150°C, RG = 5  
Clamped Inductive Load  
ICM = 100  
1500  
A
V
G
E
Tab  
C
PC  
TC = 25°C  
937  
W
G = Gate  
C = Collector  
E
= Emitter  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
°C  
°C  
°C  
Tab = Collector  
-55 ... +175  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062in.) from Case for 10s  
300  
260  
°C  
°C  
FC  
Mounting Force  
20..120 /4.5..27  
6
N/lb  
g
Features  
Weight  
High Voltage Packages  
High Blocking Voltage  
High Peak Current Capability  
Low Saturation Voltage  
Symbol  
Test Conditions  
Characteristic Values  
Advantages  
(TJ = 25C, Unless Otherwise Specified)  
Min.  
2500  
3.0  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
Low Gate Drive Requirement  
High Power Density  
5.0  
25 μA  
μA  
Applications  
TJ = 100°C  
TJ = 150°C  
100  
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
Switch-Mode and Resonant-Mode  
Power Supplies  
Uninterruptible Power Supplies (UPS)  
Laser Generators  
Capacitor Discharge Circuits  
VCE(sat)  
IC = 25A, VGE = 15V, Note 1  
3.4  
4.7  
4.0  
V
V
AC Switches  
© 2017 IXYS CORPORATION, All Rights Reserved  
DS100735B(4/17)  
IXYX25N250CV1  
IXYX25N250CV1HV  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
gfs  
IC = 25A, VCE = 10V, Note 1  
Gate Input Resistance  
16  
27  
S
RGi  
2.8  
Cies  
Coes  
Cres  
3060  
166  
43  
pF  
pF  
pF  
VCE = 25V, VGE = 0V, f = 1MHz  
Qg(on)  
Qge  
Qgc  
147  
16  
nC  
nC  
nC  
IC = 25A, VGE = 15V, VCE = 0.5 • VCES  
68  
td(on)  
tri  
Eon  
td(off)  
tfi  
15  
34  
ns  
ns  
Inductive load, TJ = 25°C  
IC = 25A, VGE = 15V  
8.3  
230  
246  
7.3  
mJ  
ns  
VCE = 0.5 • VCES, RG = 5  
ns  
Note 2  
Eoff  
mJ  
td(on)  
tri  
18  
33  
ns  
ns  
Inductive load, TJ = 150°C  
IC = 25A, VGE = 15V  
Eon  
td(off)  
tfi  
11.0  
225  
350  
10.5  
mJ  
ns  
VCE = 0.5 • VCES, RG = 5  
ns  
Note 2  
Eoff  
mJ  
RthJC  
RthCS  
0.16 °C/W  
°C/W  
0.15  
Reverse Sonic Diode (FRD)  
Symbol Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
VF  
IF = 25A, VGE = 0V, Note 1  
3.5  
V
V
TJ = 150°C  
3.1  
IRM  
trr  
38  
A
IF = 25A, VGE = 0V, TJ = 150°C  
-diF/dt = 500A/sVR = 1200V  
185  
ns  
RthJC  
0.32 °C/W  
Notes:  
1. Pulse test, t 300μs, duty cycle, d 2%.  
2. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.  
PRELIMINARY TECHNICAL INFORMATION  
The product presented herein is under development. The Technical Specifications offered are  
derived from a subjective evaluation of the design, based upon prior knowledge and experi-  
ence, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right  
to change limits, test conditions, and dimensions without notice.  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYS MOSFETs and IGBTs are covered  
by one or more of the following U.S. patents: 4,860,072 5,017,508  
4,881,106 5,034,796  
4,835,592 4,931,844  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,381,025  
5,486,715  
6,162,665  
6,259,123 B1  
6,306,728 B1  
6,404,065 B1 6,683,344  
6,534,343  
6,583,505  
6,727,585  
6,710,405 B2 6,759,692  
6,710,463  
7,005,734 B2 7,157,338B2  
7,063,975 B2  
6,771,478 B2 7,071,537  
IXYX25N250CV1  
IXYX25N250CV1HV  
Fig. 2. Extended Output Characteristics @ TJ = 25oC  
Fig. 1. Output Characteristics @ TJ = 25oC  
50  
40  
30  
20  
10  
0
250  
200  
150  
100  
50  
V
= 25V  
GE  
V
= 25V  
GE  
19V  
15V  
13V  
11V  
19V  
15V  
13V  
11V  
9V  
9V  
7V  
5V  
7V  
5V  
0
0
0
5
0.5  
1
1.5  
2
2.5  
3
3.5  
4
4.5  
5
5.5  
0
5
10  
15  
20  
25  
30  
VCE - Volts  
VCE - Volts  
Fig. 4. Dependence of VCE(sat) on  
Junction Temperature  
Fig. 3. Output Characteristics @ TJ = 150oC  
50  
40  
30  
20  
10  
0
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
V
= 25V  
GE  
V
= 15V  
GE  
19V  
15V  
13V  
11V  
9V  
7V  
I
= 50A  
C
I
= 25A  
C
I
= 12.5A  
C
5V  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
175  
1
2
3
4
5
6
7
8
VCE - Volts  
TJ - Degrees Centigrade  
Fig. 5. Collector-to-Emitter Voltage vs.  
Gate-to-Emitter Voltage  
Fig. 6. Input Admittance  
7
6
5
4
3
2
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
T
J
= 25oC  
I
= 50A  
25A  
C
T = 150oC  
J
25oC  
- 40oC  
12.5A  
19  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
7.0  
7.5  
8.0  
8.5  
9.0  
9.5  
7
9
11  
13  
15  
17  
21  
23  
25  
VGE - Volts  
VGE - Volts  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXYX25N250CV1  
IXYX25N250CV1HV  
Fig. 7. Transconductance  
Fig. 8. Gate Charge  
16  
14  
12  
10  
8
44  
40  
36  
32  
28  
24  
20  
16  
12  
8
T
J
= - 40oC  
VCE = 1250V  
IC = 25A  
IG = 10mA  
25oC  
150oC  
6
4
2
4
0
0
0
0
1
10  
20  
30  
40  
50  
60  
70  
80  
90  
0
20  
40  
60  
80  
100  
120  
140  
IC - Amperes  
QG - NanoCoulombs  
Fig. 9. Capacitance  
Fig. 10. Reverse-Bias Safe Operating Area  
10,000  
1,000  
100  
120  
100  
80  
60  
40  
20  
0
C
ies  
C
oes  
T
= 150oC  
J
R
= 5  
Ω
dv / dt < 10V / ns  
G
C
res  
= 1 MHz  
5
f
10  
100  
400  
700  
1000  
1300  
1600  
1900  
2200  
2500  
10  
15  
20  
25  
30  
35  
40  
VCE - Volts  
VCE - Volts  
Fig. 12. Maximum Transient Thermal Impedance  
Fig. 11. Forward-Bias Safe Operating Area  
1
1000  
100  
10  
V
Limit  
CE(sat)  
0.1  
25μs  
100μs  
1ms  
1
0.01  
10ms  
= 175oC  
0.1  
0.01  
T
J
= 25oC  
DC  
100ms  
T
C
Single Pulse  
0.001  
10  
100  
1000  
10000  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
VDS - Volts  
Pulse Width - Seconds  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYX25N250CV1  
IXYX25N250CV1HV  
Fig. 14. Inductive Switching Energy Loss vs.  
Collector Current  
Fig. 13. Inductive Switching Energy Loss vs.  
Gate Resistance  
24  
20  
16  
12  
8
24  
20  
16  
12  
8
26  
22  
18  
14  
10  
6
32  
28  
24  
20  
16  
12  
8
E
E
E
R
E
off  
on  
off  
on  
T = 150oC , V = 15V  
= 5  
V
Ω  
= 15V  
J
GE  
G
GE  
V
= 1250V  
V
= 1250V  
CE  
CE  
T
J
= 150oC  
I
= 50A  
C
T
J
= 25oC  
I
= 25A  
C
4
4
0
0
2
10  
15  
20  
25  
30  
35  
40  
45  
50  
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
IC - Amperes  
RG - Ohms  
Fig. 16. Inductive Turn-off Switching Times vs.  
Gate Resistance  
Fig. 15. Inductive Switching Energy Loss vs.  
Junction Temperature  
500  
450  
400  
350  
300  
250  
200  
150  
100  
1200  
1050  
900  
750  
600  
450  
300  
150  
0
26  
22  
18  
14  
10  
6
28  
24  
20  
16  
12  
8
E
E
t f i  
td(off)  
off  
= 5  
on  
= 150oC, V = 15V  
R
VGE = 15V  
Ω  
T
G
J GE  
VCE = 1250V  
V
= 1250V  
CE  
I
= 50A  
C
I
= 25A  
I = 50A  
C
C
IC = 25A  
2
4
25  
50  
75  
100  
125  
150  
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
RG - Ohms  
TJ - Degrees Centigrade  
Fig. 18. Inductive Turn-off Switching Times vs.  
Junction Temperature  
Fig. 17. Inductive Turn-off Switching Times vs.  
Collector Current  
460  
380  
300  
220  
140  
60  
350  
300  
250  
200  
150  
100  
600  
500  
400  
300  
200  
100  
0
600  
t f i  
td(off)  
t f i  
td(off)  
500  
400  
300  
200  
100  
0
R
G
= 5 , V = 15V  
Ω  
R
G
= 5 , V = 15V  
GE  
Ω  
GE  
V
= 1250V  
V
= 1250V  
CE  
CE  
T
J
= 150oC  
I
= 25A  
C
I
= 50A  
C
T
J
= 25oC  
25  
50  
75  
100  
125  
150  
10  
15  
20  
25  
30  
35  
40  
45  
50  
IC - Amperes  
TJ - Degrees Centigrade  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXYX25N250CV1  
IXYX25N250CV1HV  
Fig. 20. Inductive Turn-on Switching Times vs.  
Fig. 19. Inductive Turn-on Switching Times vs.  
Gate Resistance  
Collector Current  
90  
80  
70  
60  
50  
40  
30  
20  
10  
0
28  
26  
24  
22  
20  
18  
16  
14  
12  
10  
140  
120  
100  
80  
70  
60  
50  
40  
30  
20  
10  
0
t r i  
td(on)  
t r i  
td(on)  
T = 150oC, V = 15V  
R
G
= 5 , V = 15V  
Ω  
GE  
J
GE  
V
= 1250V  
CE  
V
= 1250V  
CE  
= 150oC  
I
= 25A  
C
T
J
I
= 50A  
C
60  
40  
T
J
= 25oC  
20  
0
10  
15  
20  
25  
30  
35  
40  
45  
50  
5
10  
15  
20  
25  
30  
35  
40  
45  
50  
55  
IC - Amperes  
RG - Ohms  
Fig. 21. Inductive Turn-on Switching Times vs.  
Junction Temperature  
120  
100  
80  
60  
40  
20  
0
24  
22  
20  
18  
16  
14  
12  
t r i  
td(on)  
R
G
= 5 , V = 15V  
Ω  
GE  
V
= 1250V  
CE  
I
= 50A  
C
I
= 25A  
C
25  
50  
75  
100  
125  
150  
TJ - Degrees Centigrade  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
IXYX25N250CV1  
IXYX25N250CV1HV  
Fig. 22. Diode Forward Characteristics  
Fig. 23. Reverse Recovery Charge vs. -diF/dt  
140  
120  
100  
80  
8
7
6
5
4
3
2
1
T = 150oC  
J
I
F
= 50A  
V
= 1200V  
R
T
J
= 25oC  
T
J
= 150oC  
25A  
60  
40  
12.5A  
20  
0
0
1
2
3
4
5
6
7
8
200  
400  
600  
800  
1000  
1200  
1400  
1400  
10  
-diF/ dt (A/μs)  
VF (V)  
Fig. 24. Reverse Recovery Current vs. -diF/dt  
Fig. 25. Reverse Recovery Time vs. -diF/dt  
80  
70  
60  
50  
40  
30  
20  
320  
280  
240  
200  
160  
120  
80  
T = 150oC  
J
T = 150oC  
J
I
= 50A  
F
V
= 1200V  
R
V
= 1200V  
R
I
F
= 50A  
25A  
25A  
12.5A  
12.5A  
200  
400  
600  
800  
1000  
1200  
1400  
200  
400  
600  
800  
1000  
1200  
diF/dt (A/μs)  
-diF/dt (A/μs)  
I
Fig. 26. Dynamic Parameters QRR, RR vs.  
Fig. 27. Maximum Transient Thermal Impedance  
(Diode)  
Junction Temperature  
1.1  
1.0  
0.9  
0.8  
0.7  
1
V
= 1200V  
R
I
F
= 25A  
-diF/dt = 500A/μs  
0.1  
K
Q
RR  
F
K
I
RR  
F
0.01  
0
20  
40  
60  
80  
100  
120  
140  
160  
0.0001  
0.001  
0.01  
0.1  
1
TJ (ºC)  
Pulse Width - Seconds  
© 2017 IXYS CORPORATION, All Rights Reserved  
IXYS REF: IXY_25N250CV1HV(7T-AT628) 4-17-17-B  
IXYX25N250CV1  
IXYX25N250CV1HV  
PLUS 247TM Outline  
TO-247PLUS-HV Outline  
E
A
A
E1  
E1  
E
Q
A2  
R
D
A2  
Q
D2  
R
D
D1  
D1  
D2  
4
4
1
2
3
1
2
3
L1  
L1  
A3  
2X  
D3  
E2  
E3  
4X  
A1  
L
b
A1  
e
e
b1  
c
b
e1  
3 PLCS  
C
2 PLCS  
3X  
b2 2 PLCS  
3X  
b4  
1 - Gate  
2,4 - Emitter  
3 - Collector  
1 - Gate 2,4 - Emitter  
3 - Collector  
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.  
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