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LYE676-T1

型号:

LYE676-T1

描述:

功率TOPLED超高亮LED[ Power TOPLED Hyper-Bright LED ]

品牌:

INFINEON[ Infineon ]

页数:

7 页

PDF大小:

77 K

Power TOPLED®  
Hyper-Bright LED  
LY E676  
Vorläufige Daten / Preliminary Data  
Besondere Merkmale  
• Gehäusebauform: P-LCC-4  
• Gehäusefarbe: weiß  
• als optischer Indikator einsetzbar  
• zur Hintergrundbeleuchtung, Lichtleiter- und  
Linseneinkopplung  
• für alle SMT-Bestücktechniken geeignet  
• gegurtet (8 mm-Filmgurt)  
• JEDEC Level 3  
• nur IR Reflow Löten  
Features  
• P-LCC-4 package  
• color of package: white  
• for use as optical indicator  
• for backlighting, optical coupling into light pipes and lenses  
• suitable for all SMT assembly methods  
• available taped on reel (8 mm tape)  
• JEDEC Level 3  
• IR reflow soldering only  
Typ  
Emissions- Farbe der  
Lichtstärke Lichtstrom  
Bestellnummer  
Ordering Code  
farbe  
Lichtaustritts-  
fläche  
Type  
Color of  
Color of the  
Luminous  
Luminous  
Flux  
Emission  
Light Emitting Intensity  
Area  
I = 50 mA  
F
I = 50 mA  
F
IV (mcd)  
ΦV (mlm)  
LY E676  
yellow  
colorless clear  
Q62703-Q3759  
LY E676-T1  
LY E676-T2  
LY E676-U1  
LY E676-U2  
250 ... 400 900 (typ.)  
320 ... 500 1200 (typ.)  
400 ... 630 1500 (typ.)  
500 ... 800 1800 (typ.)  
Streuung der Lichtstärke in einer Verpackungseinheit IV max / I V min 1.6.  
Luminous intensity ratio in one packaging unit I V max / IV min 1.6.  
Helligkeitswerte werden bei einer Strompulsdauer von 25 ms spezifiziert.  
Luminous intensity is specified at a current pulse duration of 25 ms.  
Semiconductor Group  
1
1998-11-05  
LY E676  
Grenzwerte  
Maximum Ratings  
Bezeichnung  
Parameter  
Symbol  
Symbol  
Werte  
Values  
Einheit  
Unit  
Betriebstemperatur  
Operating temperature range  
Top  
Tstg  
Tj  
– 40 ... + 100  
°C  
°C  
°C  
mA  
V
Lagertemperatur  
Storage temperature range  
– 40 ... + 100  
Sperrschichttemperatur  
Junction temperature  
+ 120  
50  
Durchlaßstrom  
Forward current  
IF  
Sperrspanung1)  
Reverse voltage1)  
VR  
Ptot  
3
Verlustleistung  
Power dissipation  
TA 25 °C  
130  
mW  
Wärmewiderstand  
Thermal resistance  
Sperrschicht / Umgebung  
Junction / air  
Rth JA  
290  
K/W  
2
Montage auf PC-board*) (Padgröße 12 mm )  
2
mounted on PC board*) (pad size 12 mm )  
1)  
Belastung in Sperrichtung sollte vermieden werden.  
1)  
Reverse biasing should be avoided.  
)
*
PC-board: FR4  
Semiconductor Group  
2
1998-11-05  
LY E676  
Kennwerte (TA = 25 °C)  
Characteristics  
Bezeichnung  
Parameter  
Symbol  
Symbol  
Werte  
Values  
Einheit  
Unit  
typ.  
max.  
Wellenlänge des emittierten Lichtes  
Wavelength at peak emission  
IF = 50 mA  
Dominantwellenlänge 2)  
Dominant wavelength 2)  
IF = 50 mA  
λpeak  
λdom  
λ  
594  
nm  
nm  
nm  
590  
17  
Spektrale Bandbreite bei 50% Irel max  
Spectral bandwidth at 50% Irel max  
IF = 50 mA  
Abstrahlwinkel bei 50% Iv (Vollwinkel)  
Viewing angle at 50% Iv  
Durchlaßspannung 1)  
Forward voltage1)  
IF = 50 mA  
2ϕ  
120  
2.1  
Grad  
deg.  
VF  
2.55  
V
Sperrstrom  
Reverse current  
VR = 3 V  
IR  
0.01  
10  
µA  
Temperaturkoeffizient von λdom (IF = 50 mA)  
Temperature coefficient of λdom (IF = 50 mA)  
TC  
t.b.d.  
t.b.d.  
t.b.d.  
t.b.d.  
nm/K  
nm/K  
mV/K  
%/K  
λ
Temperaturkoeffizient von λpeak (IF = 50 mA)  
Temperature coefficient of λpeak (IF = 50 mA)  
TC  
λ
Temperaturkoeffizient von VF (IF = 50 mA)  
Temperature coefficient of VF (IF = 50 mA)  
TCV  
TC  
Temperaturkoeffizient von IV (IF = 50 mA)  
Temperature coefficient of IV (IF = 50 mA)  
IV  
1)  
2)  
Durchlaßspannungsgruppen  
Forward voltage groups  
Wellenlängengruppen  
Wavelength groups  
Gruppe  
Group  
Durchlaßspannung Einheit  
Gruppe  
Group  
Wellenlänge  
Wavelength  
Einheit  
Unit  
Forward voltage  
Unit  
min.  
max.  
2.25  
2.55  
min.  
585  
588  
591  
max.  
590  
593  
596  
1
2
1.85  
2.15  
V
V
1
2
3
nm  
nm  
nm  
Semiconductor Group  
3
1998-11-05  
LY E676  
Relative spektrale Emission I = f (λ), TA = 25 °C, I = 50 mA  
rel  
F
Relative spectral emission  
V(λ) = spektrale Augenempfindlichkeit  
Standard eye response curve  
OHL00443  
100  
%
Ιrel  
80  
60  
40  
20  
0
V
yellow  
λ
400  
450  
500  
550  
600  
650  
nm  
700  
λ
Abstrahlcharakteristik I = f (ϕ)  
rel  
Radiation characteristic  
OHL01660  
40˚  
30˚  
20˚  
10˚  
0˚  
1.0  
ϕ
50˚  
0.8  
0.6  
0.4  
0.2  
0
60˚  
70˚  
80˚  
90˚  
100˚  
1.0  
0.8  
0.6  
0.4  
0˚  
20˚  
40˚  
60˚  
80˚  
100˚  
120˚  
Semiconductor Group  
4
1998-11-05  
LY E676  
Durchlaßstrom I = f (VF)  
Relative Lichtstärke IV/IV(50 mA) = f (IF)  
F
Forward current  
Relative luminous intensity  
TA = 25 °C  
TA = 25 °C  
OHL00444  
OHL00445  
10 2  
10 1  
Ι V  
mA  
Ι F  
Ι V (50 mA)  
10 1  
5
10 0  
5
10 0  
5
10 -1  
5
10 -1  
5
10 -2  
5
10 -2  
10 -3  
10 -1  
5
10 0  
5
10 1  
mA 10 2  
1.6  
1.8  
2.0  
2.2  
V
2.4  
VF  
Ι F  
Maximal zulässiger Durchlaßstrom  
Max. permissible forward current  
IF = f (TA)  
OHL00446  
100  
mA  
Ι F  
80  
60  
40  
20  
0
0
20  
40  
60  
80 C 100  
TA  
Semiconductor Group  
5
1998-11-05  
LY E676  
Maßzeichnung  
Package Outlines  
(Maße in mm, wenn nicht anders angegeben)  
(Dimensions in mm, unless otherwise specified)  
3.0  
2.6  
2.1  
1.7  
2.3  
2.1  
0.9  
0.7  
0.8  
0.6  
A
C
C
0.1 typ  
C
0.6  
0.4  
package  
marking  
A: Anode  
C: Cathode  
0.18  
0.12  
Empfehlung Lötpaddesign Infrarot/Vapor-Phase Reflow-Lötung  
Recommended Pad Infrared Vapor-Phase Reflow-Soldering  
3.3  
3.3  
0.4  
2.6  
1.1  
Padgeometrie für  
verbesserte Wärmeableitung  
Paddesign for  
improved heat dissipation  
Lötstoplack  
solder resist  
Cu Fläche / Cu-area  
= 12 mm2 per pad  
Semiconductor Group  
6
1998-11-05  
LY E676  
Gurtung  
Taping  
C
C
C
A
Semiconductor Group  
7
1998-11-05  
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