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LYA672-LN

型号:

LYA672-LN

描述:

超级SIDELED大电流LED[ Super SIDELED High-Current LED ]

品牌:

INFINEON[ Infineon ]

页数:

8 页

PDF大小:

175 K

Super SIDELED®  
High-Current LED  
LS A672, LO A672, LY A672  
LG A672, LP A672  
Besondere Merkmale  
Gehäusefarbe: weiß  
als optischer Indikator einsetzbar  
besonders geeignet bei hohem Umgebungslicht durch  
erhöhten Betriebsstrom (50 mA DC)  
zur Hinterleuchtung, Lichtleiter- und Linseneinkopplung  
für alle SMT-Bestück- und Reflow-Löttechniken geeignet  
gegurtet (12-mm-Filmgurt)  
Störimpulsfest nach DIN 40839  
Features  
color of package: white  
for use as optical indicator  
appropriate for high ambient light because of the higher  
operating current (50 mA DC)  
for backlighting, optical coupling into light pipes and lenses  
suitable for all SMT assembly and reflow soldering methods  
available taped on reel (12 mm tape)  
load dump resistant acc. to DIN 40839  
Semiconductor Group  
1
1998-11-12  
LS A672, LO A672, LY A672  
LG A672, LP A672  
Typ  
Emissions- Farbe der  
Lichtstärke Lichtstrom  
Bestellnummer  
Ordering Code  
farbe  
Lichtaustritts-  
fläche  
Type  
Color of  
Color of the  
Luminous  
Luminous  
Flux  
Emission  
Light Emitting Intensity  
Area  
IF = 50 mA  
IV (mcd)  
IF = 50 mA  
ΦV (mlm)  
LS A672-LP  
super-red  
orange  
colorless clear 10 ... 80  
25 ... 50  
-
Q62703-Q2761  
Q62703-Q2849  
Q62703-Q3226  
Q62703-Q2850  
LS A672-N  
LS A672-P  
LS A672-NR  
100 (typ.)  
180 (typ.)  
-
40 ... 80  
25 ... 200  
LO A672-LP  
LO A672-N  
LO A672-P  
LO A672-NR  
colorless clear 10 ... 80  
25 ... 50  
-
Q62703-Q2548  
Q62703-Q2851  
Q62703-Q2852  
Q62703-Q2853  
100 (typ.)  
180 (typ.)  
-
40 ... 80  
25 ... 200  
LY A672-LN  
LY A672-N  
LY A672-P  
LY A672-MQ  
yellow  
colorless clear 10 ... 50  
25 ... 50  
-
Q62703-Q2553  
Q62703-Q2854  
Q62703-Q2855  
Q62703-Q2856  
100 (typ.)  
180 (typ.)  
-
40 ... 80  
16 ... 125  
LG A672-LP  
LG A672-N  
LG A672-P  
LG A672-MQ  
green  
colorless clear 10 ... 80  
25 ... 50  
-
Q62703-Q2544  
Q62703-Q2857  
Q62703-Q2858  
Q62703-Q2859  
100 (typ.)  
180 (typ.)  
-
40 ... 80  
16 ... 125  
LP A672-KN  
LP A672-L  
LP A672-M  
LP A672-N  
LP A672-LP  
pure green  
colorless clear  
6.3 ... 50  
10 ... 20  
16 ... 32  
25 ... 50  
10 ... 80  
-
Q62703-Q2860  
Q62703-Q3838  
Q62703-Q3839  
Q62703-Q3148  
Q62703-Q2863  
45 (typ.)  
75 (typ.)  
100 (typ.)  
-
Nicht für Neuentwicklungen / Not for new design  
Streuung der Lichtstärke in einer Verpackungseinheit IV max / IV min 2.0.  
Luminous intensity ratio in one packaging unit IV max / IV min 2.0.  
Semiconductor Group  
2
1998-11-12  
LS A672, LO A672, LY A672  
LG A672, LP A672  
Grenzwerte  
Maximum Ratings  
Bezeichnung  
Parameter  
Symbol  
Symbol  
Werte  
Values  
Einheit  
Unit  
Betriebstemperatur  
Operating temperature range  
Top  
Tstg  
Tj  
– 55 ... + 100  
˚C  
˚C  
˚C  
mA  
A
Lagertemperatur  
Storage temperature range  
– 55 ... + 100  
Sperrschichttemperatur  
Junction temperature  
+ 100  
50  
Durchlaßstrom  
Forward current  
IF  
Stoßstrom  
IFM  
1
Surge current  
t 10 µs, D = 0.005  
Sperrspannung  
Reverse voltage  
VR  
5
V
Verlustleistung  
Power dissipation  
Ptot  
190  
330  
mW  
K/W  
Wärmewiderstand  
Thermal resistance  
Sperrschicht / Umgebung  
Junction / air  
Montage auf PC-board*) (Padgröße je 16 mm )  
mounted on PC board*) (padsize 16 mm each )  
Rth JA  
2
2
*) PC-board: FR4  
Semiconductor Group  
3
1998-11-12  
LS A672, LO A672, LY A672  
LG A672, LP A672  
Kennwerte (TA = 25 ˚C)  
Characteristics  
Bezeichnung  
Parameter  
Symbol  
Symbol  
Werte  
Values  
Einheit  
Unit  
LS LO LY LG LP  
Wellenlänge des emittierten Lichtes  
Wavelength at peak emission  
IF = 10 mA  
(typ.) λpeak  
(typ.)  
635 610 586 565 557 nm  
628 605 590 570 560 nm  
Dominantwellenlänge  
Dominant wavelength  
IF = 10 mA  
(typ.) λdom  
(typ.)  
Spektrale Bandbreite bei 50 % Irel max  
Spectral bandwidth at 50 % Irel max  
IF = 10 mA  
(typ.) λ  
(typ.)  
45  
40  
45  
25  
22  
nm  
Abstrahlwinkel bei 50 % Iv (Vollwinkel)  
Viewing angle at 50 % Iv  
2ϕ  
120 120 120 120 120 deg.  
Durchlaßspannung  
Forward voltage  
IF = 50 mA  
(typ.) VF  
(max.) VF  
2.0 2.1 2.2 2.6 2.6  
V
3.8 3.8 3.8 3.8 3.8*) V  
Sperrstrom  
Reverse current  
VR = 5 V  
(typ.) IR  
(max.) IR  
0.01 0.01 0.01 0.01 0.01 µA  
10  
10  
10  
10  
10  
µA  
Kapazität  
(typ.) C0  
40  
35  
35  
60  
80  
pF  
Capacitance  
VR = 0 V, f = 1 MHz  
Schaltzeiten:  
Switching times:  
IV from 10 % to 90 %  
IV from 90 % to 10 %  
IF = 100mA, tp = 10 µs, RL = 50 Ω  
(typ.) tr  
(typ.) tf  
350 500 350 500 500 ns  
200 250 200 250 250 ns  
*) VF max = 3.2 V as of Febr. 97  
Semiconductor Group  
4
1998-11-12  
LS A672, LO A672, LY A672  
LG A672, LP A672  
Relative spektrale Emission Irel = f (λ), TA = 25 ˚C, IF = 10 mA  
Relative Spectral Emission  
V (λ) = spektrale Augenempfindlichkeit  
Standard eye response curve  
OHL01698  
100  
%
Ιrel  
80  
V
λ
60  
40  
20  
0
400  
450  
500  
550  
600  
650  
700  
nm  
λ
Abstrahlcharakteristik Irel = f (ϕ)  
Radiation characteristic  
OHL01660  
40˚  
30˚  
20˚  
10˚  
0˚  
1.0  
ϕ
50˚  
0.8  
0.6  
0.4  
0.2  
0
60˚  
70˚  
80˚  
90˚  
100˚  
1.0  
0.8  
0.6  
0.4  
0˚  
20˚  
40˚  
60˚  
80˚  
100˚  
120˚  
Semiconductor Group  
5
1998-11-12  
LS A672, LO A672, LY A672  
LG A672, LP A672  
Durchlaßstrom IF = f (VF)  
Forward current  
TA = 25 ˚C  
Relative Lichtstärke IV/IV(50 mA) = f (IF)  
Relative luminous intensity  
TA = 25 ˚C  
Zulässige ImpulsbelastbarkeitI = f (tp)  
Permissible pulse handling capability  
Duty cycle D = parameter, TA = 25 ˚C  
Maximal zulässiger Durchlaßstrom  
Max. permissible forward current  
IF = f (TA)  
F
Semiconductor Group  
6
1998-11-12  
LS A672, LO A672, LY A672  
LG A672, LP A672  
Wellenlänge der Strahlung λpeak = f (TA)  
Wavelength at peak emission  
IF = 10 mA  
Dominantwellenlänge λdom = f (TA)  
Dominat wavelength  
IF = 10 mA  
OHL02104  
OHL02105  
690  
690  
λ peak  
λ dom  
nm  
nm  
650  
630  
610  
590  
570  
550  
650  
super-red  
orange  
yellow  
super-red  
630  
610  
590  
570  
550  
orange  
yellow  
green  
green  
pure-green  
pure-green  
0
20  
40  
60  
80 ˚C 100  
0
20  
40  
60  
80 ˚C 100  
T
A  
T
A  
Durchlaßspannung VF = f (TA)  
Forward voltage  
IF = 50 mA  
Relative Lichtstärke IV / IV(25 ˚C) = f (TA)  
Relative luminous intensity  
IF = 50 mA  
Semiconductor Group  
7
1998-11-12  
LS A672, LO A672, LY A672  
LG A672, LP A672  
Maßzeichnung  
(Maße in mm, wenn nicht anders angegeben)  
Package Outlines  
(Dimensions in mm, unless otherwise specified)  
(2.4)  
(2.85)  
1.1  
0.9  
2.54  
spacing  
Cathode  
Anode  
(1.4)  
Cathode marking  
(R1)  
4.2  
3.8  
Kathodenkennung:  
Cathode mark:  
abgeschrägte Ecke  
bevelled edge  
Semiconductor Group  
8
1998-11-12  
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