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LYA679-CO

型号:

LYA679-CO

描述:

LC SIDELED低电流LED[ LC SIDELED Low Current LED ]

品牌:

INFINEON[ Infineon ]

页数:

7 页

PDF大小:

60 K

LC SIDELED®  
LS A679, LY A679, LG A679  
Low Current LED  
Besondere Merkmale  
Gehäusefarbe: weiß  
als optischer Indikator einsetzbar  
zur Hinterleuchtung, Lichtleiter- und Linseneinkopplung  
für alle SMT-Bestück- und Reflow-Löttechniken geeignet  
gegurtet (12-mm-Filmgurt)  
Features  
color of package: white  
for use as optical indicator  
for backlighting, optical coupling into light pipes and lenses  
suitable for all SMT assembly and reflow soldering methods  
available taped on reel (12 mm tape)  
Typ  
Emissions- Farbe der  
Lichtstärke Lichtstrom  
Bestellnummer  
Ordering Code  
farbe  
Lichtaustritts-  
fläche  
Type  
Color of  
Color of the  
Luminous  
Luminous  
Flux  
Emission  
Light Emitting Intensity  
Area  
IF = 2 mA  
IV(mcd)  
IF = 2 mA  
ΦV (mlm)  
LS A679-CO  
LY A679-CO  
LG A679-CO  
super-red  
yellow  
colorless clear 0.25  
(1.0 typ.)  
3.0 (typ.)  
3.0 (typ.)  
3.0 (typ.)  
Q62703-Q2551  
Q62703-Q2554  
Q62703-Q2545  
colorless clear 0.25  
(1.0 typ.)  
green  
colorless clear 0.25  
(1.0 typ.)  
Streuung der Lichtstärke in einer Verpackungseinheit IV max / IV min 2.0.  
Luminous intensity ratio in one packaging unit IV max / IV min 2.0.  
Semiconductor Group  
1
1998-11-12  
LS A679, LY A679, LG A679  
Grenzwerte  
Maximum Ratings  
Bezeichnung  
Parameter  
Symbol Werte  
Symbol Values  
Einheit  
Unit  
Betriebstemperatur  
Operating temperature range  
Top  
Tstg  
Tj  
– 55 ... + 100  
˚C  
˚C  
˚C  
mA  
A
Lagertemperatur  
Storage temperature range  
– 55 ... + 100  
+ 100  
Sperrschichttemperatur  
Junction temperature  
Durchlaßstrom  
Forward current  
IF  
7.5  
Stoßstrom  
IFM  
0.15  
Surge current  
t 10 µs, D = 0.005  
Sperrspannung  
Reverse voltage  
VR  
5
V
Verlustleistung  
Power dissipation  
Ptot  
20  
500  
mW  
K/W  
Wärmewiderstand  
Rth JA  
Thermal resistance  
Sperrschicht / Umgebung  
Junction / air  
Montage auf PC-Board (Padgröße 16 mm2)  
mounted on PC board (pad size 16 mm2)  
Semiconductor Group  
2
1998-11-12  
LS A679, LY A679, LG A679  
Kennwerte (TA = 25 °C)  
Characteristics  
Bezeichnung  
Parameter  
Symbol  
Symbol  
Werte  
Values  
Einheit  
Unit  
LS  
LY  
LG  
Wellenlänge des emittierten Lichtes (typ.)  
Wavelength at peak emission (typ.)  
IF = 7.5 mA  
λpeak  
635  
586  
565  
nm  
nm  
nm  
Dominantwellenlänge (typ.)  
Dominant wavelength (typ.)  
IF = 7.5 mA  
λdom  
628  
45  
590  
45  
570  
25  
Spektrale Bandbreite bei 50 % Irel max (typ.) ∆λ  
Spectral bandwidth at 50 % Irel max (typ.)  
IF = 7.5 mA  
Abstrahlwinkel bei 50 % IV (Vollwinkel)  
Viewing angle at 50 % IV  
2ϕ  
120  
120  
120  
Grad  
deg.  
Durchlaßspannung (typ.)  
Forward voltage (max.)  
IF = 2 mA  
VF  
VF  
1.8  
2.6  
2.0  
2.7  
1.9  
2.6  
V
V
Sperrstrom (typ.)  
Reverse current (max.)  
VR = 5 V  
IR  
IR  
0.01  
10  
0.01  
10  
0.01  
10  
µA  
µA  
Kapazität (typ.)  
Capacitance  
C0  
3
3
15  
pF  
VR = 0 V, f = 1 MHz  
Schaltzeiten:  
Switching times:  
IV from 10 % to 90 % (typ.)  
IV from 90 % to 10 % (typ.)  
IF = 100 mA, tp = 10 µs, RL = 50 Ω  
tr  
tf  
200  
150  
200  
150  
450  
200  
ns  
ns  
Semiconductor Group  
3
1998-11-12  
LS A679, LY A679, LG A679  
Relative spektrale Emission Irel = f (λ), TA = 25 ˚C, IF = 7.5 mA  
Relative spectral emission  
V (λ) = spektrale Augenempfindlichkeit  
Standard eye response curve  
OHL01698  
100  
%
Ιrel  
80  
V
λ
60  
40  
20  
0
400  
450  
500  
550  
600  
650  
700  
nm  
λ
Abstrahlcharakteristik Irel = f (ϕ)  
Radiation characteristic  
OHL01660  
40˚  
30˚  
20˚  
10˚  
0˚  
1.0  
ϕ
50˚  
0.8  
0.6  
0.4  
0.2  
0
60˚  
70˚  
80˚  
90˚  
100˚  
1.0  
0.8  
0.6  
0.4  
0˚  
20˚  
40˚  
60˚  
80˚  
100˚  
120˚  
Semiconductor Group  
4
1998-11-12  
LS A679, LY A679, LG A679  
Durchlaßstrom IF = f (VF)  
Forward current  
TA = 25 ˚C  
Relative Lichtstärke IV / IV(2 mA) = f (IF)  
Relative luminous intensity  
TA = 25 ˚C  
OHL01207  
10 1  
OHL01208  
10 2  
Ι V  
Ι F  
mA  
Ι V(2mA)  
10 0  
5
10 1  
super-red  
green  
5
yellow  
10 -1  
green  
yellow  
super-red  
5
10 0  
5
10 -2  
5
10 -1  
10 -3  
1.0  
1.4  
1.8  
2.2  
2.6  
3.0  
3.4  
V
-1  
0
1
2
mA  
10  
5
10  
5
10  
10  
VF  
Ι F  
Zulässige Impulsbelastbarkeit IF = f (tp)  
Permissible pulse handling capability  
Duty cycle D = parameter, TA = 25 ˚C  
Maximal zulässiger Durchlaßstrom IF = f (TA)  
Max. permissible forward current  
OHL01193  
OHL01278  
10 3  
8
t P  
Ι F  
Ι F  
mA  
t P  
T
mA  
ΙF  
D
=
=
T
6
5
4
3
2
1
0
D
0.005  
0.01  
0.02  
0.05  
0.1  
10 2  
5
0.2  
0.5  
10 1  
5
DC  
10 0  
10-5  
10-4 10-3 10-2 10-1  
100 s 101  
t p  
0
20  
40  
60  
80 ˚C 100  
TA  
Semiconductor Group  
5
1998-11-12  
LS A679, LY A679, LG A679  
Wellenlänge der Stahlung λpeak = f (TA)  
Wavelength at peak emission  
IF = 7.5 mA  
Dominantwellenlänge λdom = f (TA)  
Dominant wavelength  
IF = 7.5 mA  
OHL01673  
OHL01672  
690  
690  
λ dom  
λ peak  
nm  
nm  
650  
630  
610  
590  
570  
550  
650  
super-red  
super-red  
630  
610  
yellow  
590  
yellow  
green  
green  
570  
550  
0
20  
40  
60  
80 ˚C 100  
0
20  
40  
60  
80 ˚C 100  
TA  
TA  
Durchlaßspannung VF = f (TA)  
Forward voltage  
IF = 2 mA  
Relative Lichtstärke IV / IV(25 ˚C) = f (TA)  
Relative luminous intensity  
IF = 2 mA  
OHL01675  
OHL01750  
2.0  
2.4  
Ι V  
Ι V(25 ˚C)  
1.6  
VF  
V
2.2  
1.2  
0.8  
0.4  
0.0  
2.0  
yellow  
green  
yellow  
green  
1.8  
super-red  
super-red  
1.6  
1.4  
0
20  
40  
60  
80 ˚C 100  
0
20  
40  
60  
80 ˚C 100  
TA  
TA  
Semiconductor Group  
6
1998-11-12  
LS A679, LY A679, LG A679  
Maßzeichnung  
(Maße in mm, wenn nicht anders angegeben)  
Package Outlines  
(Dimensions in mm, unless otherwise specified)  
(2.4)  
(2.85)  
1.1  
0.9  
2.54  
spacing  
Cathode  
Anode  
(1.4)  
Cathode marking  
(R1)  
4.2  
3.8  
Kathodenkennung:  
Cathode mark:  
abgeschrägte Ecke  
bevelled edge  
Semiconductor Group  
7
1998-11-12  
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