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XTR105UA

型号:

XTR105UA

品牌:

TI[ TEXAS INSTRUMENTS ]

页数:

21 页

PDF大小:

576 K

XTR105  
XTR105  
XTR105  
SBOS061B FEBRUARY 1997 REVISED AUGUST 2004  
4-20mA CURRENT TRANSMITTER  
with Sensor Excitation and Linearization  
FEATURES  
APPLICATIONS  
LOW UNADJUSTED ERROR  
TWO PRECISION CURRENT SOURCES: 800  
LINEARIZATION  
INDUSTRIAL PROCESS CONTROL  
µA each  
FACTORY AUTOMATION  
SCADA REMOTE DATA ACQUISITION  
2- OR 3-WIRE RTD OPERATION  
LOW OFFSET DRIFT: 0.4µV/°C  
REMOTE TEMPERATURE AND PRESSURE  
TRANSDUCERS  
LOW OUTPUT CURRENT NOISE: 30nAPP  
HIGH PSR: 110dB minimum  
Pt100 NONLINEARITY CORRECTION  
USING XTR105  
5
HIGH CMR: 86dB minimum  
WIDE SUPPLY RANGE: 7.5V to 36V  
DIP-14 AND SO-14 PACKAGES  
4
3
Uncorrected  
RTD Nonlinearity  
DESCRIPTION  
2
The XTR105 is a monolithic 4-20mA, 2-wire current transmit-  
ter with two precision current sources. It provides complete  
current excitation for platinum RTD temperature sensors and  
bridges, instrumentation amplifiers, and current output cir-  
cuitry on a single integrated circuit.  
1
Corrected  
Nonlinearity  
0
1  
200°C  
+850°C  
Versatile linearization circuitry provides a 2nd-order correc-  
tion to the RTD, typically achieving a 40:1 improvement in  
linearity.  
Process Temperature (°C)  
IR = 0.8mA  
IR = 0.8mA  
Instrumentation amplifier gain can be configured for a wide  
range of temperature or pressure measurements. Total un-  
adjusted error of the complete current transmitter is low  
enough to permit use without adjustment in many applica-  
tions. This includes zero output current drift, span drift, and  
nonlinearity. The XTR105 operates on loop power-supply  
voltages down to 7.5V.  
VLIN  
VREG  
7.5V to 36V  
VPS  
+
4-20 mA  
VO  
RL  
XTR105  
RTD  
RG  
The XTR105 is available in DIP-14 and SO-14 surface-  
mount packages and is specified for the 40°C to +85°C  
industrial temperature range.  
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
All trademarks are the property of their respective owners.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of Texas Instruments  
standard warranty. Production processing does not necessarily include  
testing of all parameters.  
Copyright © 1997-2004, Texas Instruments Incorporated  
www.ti.com  
ABSOLUTE MAXIMUM RATINGS(1)  
ELECTROSTATIC  
DISCHARGE SENSITIVITY  
This integrated circuit can be damaged by ESD. Texas Instru-  
ments recommends that all integrated circuits be handled with  
appropriate precautions. Failure to observe proper handling  
and installation procedures can cause damage.  
Power Supply, V+ (referenced to the IO pin) ...................................... 40V  
Input Voltage, VIN+, VIN(referenced to the IO pin) .................... 0V to V+  
Storage Temperature Range .........................................55°C to +125°C  
Lead Temperature (soldering, 10s)............................................... +300°C  
Output Current Limit ................................................................ Continuous  
Junction Temperature .................................................................... +165°C  
NOTE: (1) Stresses above those listed under Absolute Maximum Ratings”  
may cause permanent damage to the device. Exposure to absolute maximum  
conditions for extended periods may affect device reliability.  
ESD damage can range from subtle performance degrada-  
tion to complete device failure. Precision integrated circuits  
may be more susceptible to damage because very small  
parametric changes could cause the device not to meet its  
published specifications.  
PACKAGE/ORDERING INFORMATION(1)  
SPECIFIED  
PACKAGE  
DESIGNATOR  
TEMPERATURE  
RANGE  
PACKAGE  
MARKING  
ORDERING  
NUMBER  
TRANSPORT  
MEDIA, QUANTITY  
PRODUCT  
PACKAGE-LEAD  
XTR105  
DIP-14  
N
"
40°C to +85°C  
XTR105PA  
XTR105P  
XTR105UA  
XTR105UA  
XTR105U  
XTR105U  
XTR105PA  
XTR105P  
Rails, 25  
Rails, 25  
"
"
"
XTR105  
SO-14 Surface-Mount  
D
40°C to +85°C  
XTR105UA  
Rails, 58  
"
XTR105  
"
"
"
D
"
"
XTR105UA/2K5  
XTR105U  
Tape and Reel, 2500  
Rails, 58  
SO-14 Surface-Mount  
40°C to +85°C  
"
"
XTR105U/2K5  
Tape and Reel, 2500  
NOTE: (1) For the most current package and ordering information, see the Package Option Addendum located at the end of this data sheet.  
FUNCTIONAL BLOCK DIAGRAM  
PIN CONFIGURATION  
Top View  
DIP and SO  
VLIN  
IR1  
12  
IR2  
1
14  
VREG  
V+  
800µA  
800µA  
11  
1
2
3
4
5
6
7
IR1  
VIN  
RG  
RG  
NC  
IRET  
IO  
14 IR2  
10  
13 VI+N  
12 VLIN  
11 VREG  
10 V+  
13  
4
VI+N  
5.1V  
B
9
RLIN  
1kΩ  
Q1  
100µA  
RG  
3
2
E
8
VIN  
9
8
B (Base)  
E (Emitter)  
I = 100µA +  
RG  
VIN  
975Ω  
25Ω  
NC = No Internal Connection  
7
40  
RG  
IO = 4mA + VIN  
(
)
6
IRET  
XTR105  
2
SBOS061B  
www.ti.com  
ELECTRICAL CHARACTERISTICS  
At TA = +25°C, V+ = 24V, and TIP29C external transistor, unless otherwise noted.  
XTR105P, U  
TYP  
XTR105PA, UA  
TYP  
PARAMETER  
CONDITIONS  
MIN  
MAX  
MIN  
MAX  
UNITS  
OUTPUT  
Output Current Equation  
Output Current, Specified Range  
Over-Scale Limit  
A
IO = VIN (40/RG) + 4mA, VIN in Volts, RG in Ω  
4
20  
30  
2.6  
mA  
mA  
mA  
24  
1.8  
27  
2.2  
Under-Scale Limit  
IREG = 0V  
ZERO OUTPUT(1)  
Initial Error  
vs Temperature  
vs Supply Voltage, V+  
vs Common-Mode Voltage  
vs VREG Output Current  
Noise, 0.1Hz to 10Hz  
VIN = 0V, RG = ∞  
4
±5  
±0.07  
0.04  
0.02  
0.3  
mA  
µA  
±25  
±0.5  
0.2  
±50  
±0.9  
µA/°C  
µA/V  
µA/V  
µA/mA  
µAPP  
V+ = 7.5V to 36V  
VCM = 1.25V to 3.5V(2)  
0.03  
SPAN  
Span Equation (transconductance)  
Initial Error(3)  
vs Temperature(3)  
Nonlinearity, Ideal Input(4)  
S = 40/RG  
±0.05  
±3  
A/V  
%
ppm/°C  
%
Full-Scale (VIN) = 50mV  
Full-Scale (VIN) = 50mV  
±0.2  
±25  
0.01  
±0.4  
0.003  
INPUT(5)  
Offset Voltage  
vs Temperature  
vs Supply Voltage, V+  
vs Common-Mode Voltage,  
RTI (CMRR)  
VCM = 2V  
±50  
±0.4  
±0.3  
±10  
±100  
±1.5  
±3  
±250  
±3  
µV  
µV/°C  
µV/V  
µV/V  
V+ = 7.5V to 36V  
VCM = 1.25V to 3.5V(2)  
±50  
±100  
Common-Mode Input Range(2)  
Input Bias Current  
vs Temperature  
Input Offset Current  
vs Temperature  
Impedance, Differential  
Common-Mode  
Noise, 0.1Hz to 10Hz  
1.25  
3.5  
25  
50  
V
nA  
pA/°C  
nA  
pA/°C  
G|| pF  
G|| pF  
µVPP  
5
20  
±0.2  
5
0.1 || 1  
5 || 10  
0.6  
±3  
±10  
CURRENT SOURCES  
Current  
Accuracy  
vs Temperature  
vs Power Supply, V+  
Matching  
vs Temperature  
vs Power Supply, V+  
Compliance Voltage, Positive  
Negative(2)  
VO = 2V(6)  
800  
±0.05  
±15  
±10  
±0.02  
±3  
µA  
%
ppm/°C  
ppm/V  
%
ppm/°C  
ppm/V  
V
±0.2  
±35  
±25  
±0.1  
±15  
10  
±0.4  
±75  
±0.2  
±30  
V+ = 7.5V to 36V  
V+ = 7.5V to 36V  
1
(V+) 3 (V+) 2.5  
0
0.2  
150  
0.003  
V
MΩ  
µAPP  
Output Impedance  
Noise, 0.1Hz to 10Hz  
(2)  
VREG  
5.1  
±0.02  
±0.2  
1
±1  
75  
V
V
Accuracy  
±0.1  
vs Temperature  
vs Supply Voltage, V+  
Output Current  
Output Impedance  
mV/°C  
mV/V  
mA  
LINEARIZATION  
RLIN (internal)  
Accuracy  
1
±0.2  
±25  
kΩ  
%
ppm/°C  
±0.5  
±100  
±1  
vs Temperature  
POWER SUPPLY  
Specified  
Voltage Range  
+24  
V
V
+7.5  
+36  
TEMPERATURE RANGE  
Specification, TMIN to TMAX  
Operating  
40  
55  
55  
+85  
+125  
+125  
°C  
°C  
°C  
Storage  
Thermal Resistance, θJA  
DIP-14  
SO-14 Surface-Mount  
80  
100  
°C/W  
°C/W  
Specification same as XTR105P and XTR105U.  
NOTES:(1) Describes accuracy of the 4mA low-scale offset current. Does not include input amplifier effects. Can be trimmed to zero.  
(2) Voltage measured with respect to IRET pin.  
(3) Does not include initial error or TCR of gain-setting resistor, RG.  
(4) Increasing the full-scale input range improves nonlinearity.  
(5) Does not include Zero Output initial error.  
(6) Current source output voltage with respect to IRET pin.  
XTR105  
SBOS061B  
3
www.ti.com  
TYPICAL CHARACTERISTICS  
At TA = +25°C and V+ = 24V, unless otherwise noted.  
TRANSCONDUCTANCE vs FREQUENCY  
50  
STEP RESPONSE  
RG = 500Ω  
RG = 125Ω  
RG = 2kΩ  
40  
30  
20  
10  
0
20mA  
RG = 125Ω  
RG = 2kΩ  
4mA  
25µs/div  
100  
1k  
10k  
100k  
1M  
Frequency (Hz)  
COMMON-MODE REJECTION vs FREQUENCY  
Full-Scale Input = 50mV  
POWER-SUPPLY REJECTION vs FREQUENCY  
110  
100  
90  
80  
70  
60  
50  
40  
30  
20  
140  
120  
100  
80  
RG = 125Ω  
RG = 125Ω  
RG = 2kΩ  
60  
RG = 2kΩ  
40  
20  
0
10  
100  
1k  
10k  
100k  
1M  
10  
100  
1k  
10k  
100k  
1M  
Frequency (Hz)  
Frequency (Hz)  
OVER-SCALE CURRENT vs TEMPERATURE  
With External Transistor  
UNDER-SCALE CURRENT vs TEMPERATURE  
29  
28  
27  
26  
25  
24  
23  
2.40  
2.35  
2.30  
2.25  
2.20  
2.15  
V+ = 36V  
V+ = 7.5V  
V+ = 24V  
V+ = 7.5V to 36V  
75  
50  
25  
0
25  
50  
75  
100  
125  
75  
50  
25  
0
25  
50  
75  
100  
125  
Temperature (°C)  
Temperature (°C)  
XTR105  
4
SBOS061B  
www.ti.com  
TYPICAL CHARACTERISTICS (Cont.)  
At TA = +25°C and V+ = 24V, unless otherwise noted.  
ZERO OUTPUT AND REFERENCE  
CURRENT NOISE vs FREQUENCY  
INPUT VOLTAGE AND CURRENT  
NOISE DENSITY vs FREQUENCY  
10k  
1k  
10k  
1k  
10k  
1k  
Zero Output Current  
Current Noise  
Voltage Noise  
100  
10  
100  
10  
100  
Reference Current  
10  
1
10  
100  
1k  
10k  
100k  
1
10  
100  
1k  
10k  
100k  
Frequency (Hz)  
Frequency (Hz)  
ZERO OUTPUT CURRENT ERROR  
vs TEMPERATURE  
INPUT BIAS AND OFFSET CURRENT  
vs TEMPERATURE  
4
2
25  
20  
15  
10  
5
0
2  
4  
6  
8  
10  
12  
+IB  
IB  
IOS  
0
75  
50  
25  
0
25  
50  
75  
100  
125  
75  
50  
25  
0
25  
50  
75  
100  
125  
Temperature (°C)  
Temperature (°C)  
INPUT OFFSET VOLTAGE DRIFT  
PRODUCTION DISTRIBUTION  
ZERO OUTPUT DRIFT  
PRODUCTION DISTRIBUTION  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
40  
35  
30  
25  
20  
15  
10  
5
Typical Production Distribution  
of Packaged Units.  
Typical Production Distribution  
of Packaged Units.  
0.02%  
0.1%  
0
0
Input Offset Voltage Drift (µV/°C)  
Zero Output Drift (µA/°C)  
XTR105  
SBOS061B  
5
www.ti.com  
TYPICAL CHARACTERISTICS (Cont.)  
At TA = +25°C and V+ = 24V, unless otherwise noted.  
CURRENT SOURCE DRIFT  
CURRENT SOURCE MATCHING  
PRODUCTION DISTRIBUTION  
40  
DRIFT PRODUCTION DISTRIBUTION  
80  
70  
60  
50  
40  
30  
20  
10  
0
Typical Production Distribution  
Typical Production Distribution  
of Packaged Units.  
35  
of Packaged Units.  
I
R1 AND IR2 Included.  
30  
25  
20  
15  
10  
5
0.04%  
0.01%  
0.07% 0.02%  
0
Current Source Drift (ppm/°C)  
Current Source Matching Drift (ppm/°C)  
REFERENCE CURRENT ERROR  
vs TEMPERATURE  
VREG OUTPUT VOLTAGE vs VREG OUTPUT CURRENT  
+0.05  
0
5.35  
5.30  
5.25  
5.20  
5.15  
5.10  
5.05  
5.00  
125°C  
25°C  
0.05  
0.10  
0.15  
0.20  
55°C  
NOTE: Above 1mA,  
Zero Output Degrades  
75  
50  
25  
0
25  
50  
75  
100  
125  
1.0  
0.5  
0
0.5  
1.0  
1.5  
2.0  
Temperature (°C)  
VREG Output Current (mA)  
XTR105  
6
SBOS061B  
www.ti.com  
The transfer function through the complete instrumentation  
amplifier and voltage-to-current converter is:  
APPLICATION INFORMATION  
Figure 1 shows the basic connection diagram for the XTR105.  
The loop power supply, VPS, provides power for all circuitry.  
Output loop current is measured as a voltage across the  
series load resistor, RL.  
IO = 4mA + VIN (40/RG)  
(VIN in volts, RG in ohms)  
where VIN is the differential input voltage.  
As evident from the transfer function, if no RG is used the  
gain is zero and the output is simply the XTR105s zero  
current. The value of RG varies slightly for 2-wire RTD and 3-  
wire RTD connections with linearization. RG can be calcu-  
lated from the equations given in Figure 1 (2-wire RTD  
connection) and Table I (3-wire RTD connection).  
Two matched 0.8mA current sources drive the RTD and  
zero-setting resistor, RZ. The instrumentation amplifier input  
of the XTR105 measures the voltage difference between the  
RTD and RZ. The value of RZ is chosen to be equal to the  
resistance of the RTD at the low-scale (minimum) measure-  
ment temperature. RZ can be adjusted to achieve 4mA output  
at the minimum measurement temperature to correct for  
input offset voltage and reference current mismatch of the  
XTR105.  
The IRET pin is the return path for all current from the current  
sources and VREG. The IRET pin allows any current used in  
external circuitry to be sensed by the XTR105 and to be  
included in the output current without causing an error.  
RCM provides an additional voltage drop to bias the inputs of  
the XTR105 within their common-mode input range. RCM  
should be bypassed with a 0.01µF capacitor to minimize  
common-mode noise. Resistor RG sets the gain of the instru-  
mentation amplifier according to the desired temperature  
range. RLIN1 provides 2nd-order linearization correction to the  
RTD, typically achieving a 40:1 improvement in linearity. An  
additional resistor is required for 3-wire RTD connections  
(see Figure 3).  
The VREG pin provides an on-chip voltage source of approxi-  
mately 5.1V and is suitable for powering external input  
circuitry (refer to Figure 6). It is a moderately accurate  
voltage referenceit is not the same reference used to set  
the 800µA current references. VREG is capable of sourcing  
approximately 1mA of current. Exceeding 1mA may affect  
the 4mA zero output.  
IR = 0.8mA  
IR = 0.8mA  
Possible choices for Q1 (see text).  
TYPE  
PACKAGE  
2N4922  
TIP29C  
TIP31C  
TO-225  
TO-220  
TO-220  
12  
1
IR1  
7.5V to 36V  
VLIN  
14  
13  
11  
VI+N  
IR2  
10  
V+  
VREG  
IO  
4
RG  
4-20 mA  
9
8
R(G2)  
B
E
0.01µF  
Q1  
XTR105  
VO  
+
3
2
RG  
VIN  
(3)  
RLIN1  
RL  
VPS  
IO  
7
IRET  
RTD  
(1)  
6
40  
RG  
RZ  
IO = 4mA + VIN (  
)
NOTES: (1) RZ = RTD resistance at minimum measured temperature.  
2R1(R2 +RZ) 4(R2RZ)  
RCM = 1kΩ  
0.01µF  
(2)  
(3)  
RG  
=
R
2 R1  
LIN(R2 R1)  
2(2R1 R2 RZ)  
R
RLIN1  
=
where R1 = RTD Resistance at (TMIN + TMAX)/2  
R2 = RTD Resistance at TMAX  
RLIN = 1k(Internal)  
FIGURE 1. Basic 2-Wire RTD Temperature Measurement Circuit with Linearization.  
XTR105  
SBOS061B  
7
www.ti.com  
MEASUREMENT TEMPERATURE SPAN T (°C)  
300°C 400°C 500°C 600°C 700°C  
200°C 18.7/86.6 18.7/169 18.7/255 18.7/340 18.7/422 18.7/511 18.7/590 18.7/665 18.7/750 18.7/845  
TMIN  
100°C  
200°C  
800°C  
900°C  
1000°C  
15000  
16500  
9760  
11500  
8060  
10000  
6650  
8870  
5620  
7870  
4750  
7150  
4020  
6420  
3480  
5900  
3090  
5360  
2740  
4990  
100°C 60.4/80.6 60.4/162 60.4/243 60.4/324 60.4/402 60.4/487 60.4/562 60.4/649 60.4/732  
27400  
29400  
15400  
17800  
10500  
13000  
7870  
10200  
6040  
8660  
4990  
7500  
4220  
6490  
3570  
5900  
3090  
5360  
0°C  
100/78.7 100/158  
100/237  
10500  
13000  
100/316  
7680  
10000  
100/392  
6040  
8250  
100/475  
4870  
7150  
100/549  
4020  
6340  
100/634  
3480  
5620  
33200  
35700  
16200  
18700  
100°C  
200°C  
300°C  
400°C  
500°C  
600°C  
700°C  
800°C  
137/75  
31600  
34000  
137/150  
15400  
17800  
137/226  
10200  
12400  
137/301  
7500  
9760  
137/383  
5760  
8060  
137/453  
4750  
6810  
137/536  
3920  
6040  
RZ /RG  
RLIN1  
RLIN2  
174/73.2 174/147  
30900  
33200  
174/221  
9760  
12100  
174/294  
7150  
9310  
174/365  
5620  
7680  
174/442  
4530  
6490  
15000  
17400  
210/71.5 210/143  
30100  
32400  
210/215  
9530  
11500  
210/287  
6980  
8870  
210/357  
5360  
7320  
14700  
16500  
NOTE:Thevalueslistedinthistableare1%resistors(in).  
Exact values may be calculated from the following equa-  
tions:  
249/68.1 249/137  
28700  
30900  
249/205  
9090  
11000  
249/274  
6650  
8450  
14000  
16200  
RZ = RTD resistance at minimum measured temperature.  
280/66.5 280/133  
28000  
30100  
280/200  
8870  
10500  
13700  
15400  
2(R2 RZ )(R1 RZ )  
RG  
=
(R2 R1)  
316/64.9 313/130  
26700  
28700  
R
LIN(R2 R1)  
13000  
14700  
RLIN1  
=
2(2R1 R2 RZ )  
348/61.9  
26100  
27400  
(RLIN +RG)(R2 R1)  
2(2R1 R2 RZ )  
RLIN2  
=
374/60.4  
24900  
26700  
where: R1 = RTD resistance at (TMIN + TMAX)/2  
R2 = RTD resistance at TMAX  
RLIN = 1k(Internal)  
EXAMPLE:  
The measurement range is 100°C to +200°C for a 3-wire Pt100 RTD connection. Determine the values for RS, RG, RLIN1, and RLIN2. Look up the values  
from the chart or calculate the values according to the equations provided.  
METHOD 1: TABLE LOOK UP  
For TMIN = 100°C and T = 300°C, the 1% values are:  
RZ = 60.4Ω  
RG = 243Ω  
RLIN1 = 10.5kΩ  
RLIN2 = 13kΩ  
Calculation of Pt100 Resistance Values  
METHOD 2: CALCULATION  
(according to DIN IEC 751)  
Step 1: Determine RZ, R1, and R2.  
(Equation 1) Temperature range from 200°C to 0°C:  
RZ is the RTD resistance at the minimum measured temperature,TMIN = 100°C.  
Using Equation 1 at right gives RZ = 60.25(1% value is 60.4).  
R(T) = 100 [1 + 3.90802 103 T 0.5802 106  
T2 4.27350 1012 (T 100) T3]  
R2 is the RTD resistance at the maximum measured temperature, TMAX = 200°C.  
Using Equation 2 at right gives R2 = 175.84.  
(Equation 2) Temperature range from 0°C to +850°C:  
R(T) = 100 (1 + 3.90802 103 T 0.5802 106 T2)  
R1 is the RTD resistance at the midpoint measured temperature,  
TMID = (TMIN + TMAX)/2 = 50°C. R1 is NOT the average of RZ and R2.  
Using Equation 2 at right gives R1 = 119.40.  
where: R(T) is the resistance in at temperature T.  
T is the temperature in °C.  
Step 2: Calculate RG, RLIN1, and RLIN2 using equations above.  
NOTE: Most RTD manufacturers provide reference tables for  
resistance values at various temperatures.  
RG = 242.3(1% value is 243)  
RLIN1 = 10.413k(1% value is 10.5k)  
RLIN2 = 12.936k(1% value is 13k)  
TABLE I. RZ, RG, RLIN1, and RLIN2 Standard 1% Resistor Values for 3-Wire Pt100 RTD Connection with Linearization.  
A negative input voltage, VIN, will cause the output current to  
be less than 4mA. Increasingly negative VIN will cause the  
output current to limit at approximately 2.2mA. Refer to the  
typical characteristic Under-Scale Current vs Temperature.  
Increasingly positive input voltage (greater than the full-scale  
input) will produce increasing output current according to the  
transfer function, up to the output current limit of approxi-  
mately 27mA. Refer to the typical characteristic Over-Scale  
Current vs Temperature.  
XTR105  
8
SBOS061B  
www.ti.com  
EXTERNAL TRANSISTOR  
It is recommended to design for V+ equal or greater than  
7.5V with loop currents up to 30mA to allow for out-of-range  
input conditions.  
Transistor Q1 conducts the majority of the signal-dependent  
4-20mA loop current. Using an external transistor isolates  
the majority of the power dissipation from the precision input  
and reference circuitry of the XTR105, maintaining excellent  
accuracy.  
The low operating voltage (7.5V) of the XTR105 allows  
operation directly from personal computer power supplies  
(12V ±5%). When used with the RCV420 current loop re-  
ceiver (see Figure 7), the load resistor voltage drop is limited  
to 3V.  
Since the external transistor is inside a feedback loop, its  
characteristics are not critical. Requirements are: VCEO = 45V  
min, β = 40 min, and PD = 800mW. Power dissipation  
requirements may be lower if the loop power-supply voltage  
is less than 36V. Some possible choices for Q1 are listed in  
Figure 1.  
ADJUSTING INITIAL ERRORS  
Many applications require adjustment of initial errors. Input  
offset and reference current mismatch errors can be cor-  
rected by adjustment of the zero resistor, RZ. Adjusting the  
gain-setting resistor, RG, corrects any errors associated with  
gain.  
The XTR105 can be operated without this external transis-  
tor, however, accuracy will be somewhat degraded due to  
the internal power dissipation. Operation without Q1 is not  
recommended for extended temperature ranges. A resistor  
(R = 3.3k) connected between the IRET pin and the E  
(emitter) pin may be needed for operation below 0°C with-  
out Q1 to ensure the full 20mA full-scale output, especially  
with V+ near 7.5V.  
2- AND 3-WIRE RTD CONNECTIONS  
In Figure 1, the RTD can be located remotely simply by  
extending the two connections to the RTD. With this remote  
2-wire connection to the RTD, line resistance will introduce  
error. This error can be partially corrected by adjusting the  
values of RZ, RG, and RLIN1  
.
A better method for remotely located RTDs is the 3-wire RTD  
connection (see Figure 3). This circuit offers improved accu-  
racy. RZs current is routed through a third wire to the RTD.  
Assuming line resistance is equal in RTD lines 1 and 2, this  
produces a small common-mode voltage that is rejected by  
the XTR105. A second resistor, RLIN2, is required for linear-  
ization.  
10  
V+  
8
E
XTR105  
0.01µF  
Note that although the 2-wire and 3-wire RTD connection  
circuits are very similar, the gain-setting resistor, RG, has  
slightly different equations:  
IO  
7
2R1(R2 +RZ) 4(R2RZ)  
IRET  
6
RG  
=
2-wire:  
3-wire:  
R2 R1  
For operation without an external  
transistor, connect a 3.3kΩ  
resistor between pin 6 and pin 8.  
See text for discussion  
of performance.  
2(R2 RZ)(R1 RZ)  
R2 R1  
RG  
=
R
Q = 3.3kΩ  
where: RZ = RTD resistance at TMIN  
R1 = RTD resistance at (TMIN + TMAX)/2  
R2 = RTD resistance at TMAX  
FIGURE 2. Operation Without an External Transistor.  
To maintain good accuracy, at least 1% (or better) resistors  
should be used for RG. Table I provides standard 1% RG  
resistor values for a 3-wire Pt100 RTD connection with  
linearization.  
LOOP POWER SUPPLY  
The voltage applied to the XTR105, V+, is measured with  
respect to the IO connection, pin 7. V+ can range from 7.5V  
to 36V. The loop-supply voltage, VPS, will differ from the  
voltage applied to the XTR105 according to the voltage drop  
on the current sensing resistor, RL (plus any other voltage  
drop in the line).  
LINEARIZATION  
RTD temperature sensors are inherently (but predictably)  
nonlinear. With the addition of one or two external resistors,  
If a low loop-supply voltage is used, RL (including the loop  
wiring resistance) must be made a relatively low value to  
assure that V+ remains 7.5V or greater for the maximum loop  
current of 20mA:  
RLIN1 and RLIN2, it is possible to compensate for most of this  
nonlinearity resulting in 40:1 improvement in linearity over  
the uncompensated output.  
See Figure 1 for a typical 2-wire RTD application with  
linearization. Resistor RLIN1 provides positive feedback and  
controls linearity correction. RLIN1 is chosen according to the  
desired temperature range. An equation is given in Figure 1.  
(V+) 7.5V  
RL max =  
RWIRING  
20mA  
XTR105  
SBOS061B  
9
www.ti.com  
In 3-wire RTD connections, an additional resistor, RLIN2, is  
required. As with the 2-wire RTD application, RLIN1 provides  
positive feedback for linearization. RLIN2 provides an offset  
canceling current to compensate for wiring resistance en-  
countered in remotely located RTDs. RLIN1 and RLIN2 are  
chosen such that their currents are equal. This makes the  
voltage drop in the wiring resistance to the RTD a common-  
mode signal that is rejected by the XTR105. The nearest  
standard 1% resistor values for RLIN1 and RLIN2 should be  
adequate for most applications. Table I provides the 1%  
resistor values for a 3-wire Pt100 RTD connection.  
ERROR ANALYSIS  
See Table II for how to calculate the effect various error  
sources have on circuit accuracy. A sample error calculation  
for a typical RTD measurement circuit (Pt100 RTD, 200°C  
measurement span) is provided. The results reveal the  
XTR105s excellent accuracy, in this case 1.1% unadjusted.  
Adjusting resistors RG and RZ for gain and offset errors  
improves circuit accuracy to 0.32%. Note that these are  
worst-case errors; ensured maximum values were used in  
the calculations and all errors were assumed to be positive  
(additive). The XTR105 achieves performance that is difficult  
to obtain with discrete circuitry and requires less space.  
If no linearity correction is desired, the VLIN pin should be left  
open. With no linearization, RG = 2500 VFS, where  
VFS = full-scale input range.  
OPEN-CIRCUIT PROTECTION  
The optional transistor Q2 in Figure 3 provides predictable  
behavior with open-circuit RTD connections. It assures that  
if any one of the three RTD connections is broken, the  
XTR105s output current will go to either its high current limit  
(27mA) or low current limit (2.2mA). This is easily  
detected as an out-of-range condition.  
RTDs  
The text and figures thus far have assumed a Pt100 RTD. With  
higher resistance RTDs, the temperature range and input  
voltage variation should be evaluated to ensure proper com-  
mon-mode biasing of the inputs. As mentioned earlier, RCM can  
be adjusted to provide an additional voltage drop to bias the  
inputs of the XTR105 within their common-mode input range.  
12  
IO  
1
IR1  
VLIN  
14  
11  
IR2  
13  
VI+N  
(1)  
(1)  
10  
V+  
RLIN1  
RLIN2  
VREG  
4
RG  
R(G1)  
9
8
B
E
Q1  
0.01µF  
XTR105  
3
2
RG  
VIN  
IO  
7
IRET  
(1)  
EQUAL line resistances here  
creates a small common-mode  
voltage which is rejected by  
the XTR105.  
RZ  
IO  
6
2
1
RCM = 1000Ω  
0.01µF  
(RLINE2  
)
(RLINE1)  
NOTES: (1) See Table I for resistor equations and  
1% values. (2) Q2 optional. Provides predictable  
output current if any one RTD connection is  
broken:  
(2)  
Q2  
2N2222  
RTD  
OPEN RTD  
IO  
TERMINAL  
(RLINE3  
)
1
2
3
2.2mA  
27mA  
2.2mA  
3
Resistance in this line causes  
a small common-mode voltage  
which is rejected by the XTR105.  
FIGURE 3. Remotely Located RTDs with 3-Wire Connection.  
XTR105  
10  
SBOS061B  
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SAMPLE ERROR CALCULATION  
RTD value at 4mA Output (RRTD MIN):  
RTD Measurement Range:  
Ambient Temperature Range (TA):  
Supply Voltage Change (V+):  
100Ω  
200°C  
20°C  
5V  
Common-Mode Voltage Change (CM):  
0.1V  
ERROR  
(ppm of Full Scale)  
SAMPLE  
ERROR CALCULATION(1)  
ERROR SOURCE  
ERROR EQUATION  
UNADJ.  
ADJUST.  
INPUT  
Input Offset Voltage  
vs Common-Mode  
Input Bias Current  
Input Offset Current  
VOS/(VIN MAX) 106  
CMRR CM/(VIN MAX) 106  
IB/IREF 106  
100µV/(800µA 0.38/°C 200°C) 106  
50µV/V 0.1V/(800µA 0.38/°C 200°C) 106  
0.025µA/800µA 106  
1645  
82  
31  
0
82  
0
I
OS RRTD MIN/(VIN MAX) 106  
3nA 100/(800µA 0.38/°C 200°C) 106  
5
0
Total Input Error:  
1763  
82  
EXCITATION  
Current Reference Accuracy  
vs Supply  
I
REF Accuracy (%)/100% 106  
0.2%/100% 106  
25ppm/V 5V  
0.1%/100% 800µA 100/(800µA 0.38/°C 200°C) 106  
2000  
125  
1316  
0
125  
0
(IREF vs V+) V+  
Current Reference Matching  
I
REF Matching (%)/100% 800µA •  
R
RTD MIN/(VIN MAX) 106  
vs Supply  
(IREF Matching vs V+) V+ •  
RTD MIN/(VIN MAX  
10ppm/V 5V 800µA 100/(800µA 0.38/°C 200°C)  
66  
66  
R
)
Total Excitation Error:  
3507  
191  
GAIN  
Span  
Nonlinearity  
Span Error (%)/100% 106  
Nonlinearity (%)/100% 106  
0.2%/100% 106  
0.01%/100% 106  
Total Gain Error:  
2000  
100  
2100  
0
100  
100  
OUTPUT  
Zero Output  
vs Supply  
(IZERO 4mA) /16000µA 106  
(IZERO vs V+) V+/16000µA 106  
25µA/16000µA 106  
0.2µA/V 5V/16000µA 106  
Total Output Error:  
1563  
63  
1626  
0
63  
63  
DRIFT (TA = 20°C)  
Input Offset Voltage  
Input Bias Current (typical)  
Input Offset Current (typical)  
Current Reference Accuracy  
Drift TA/(VIN MAX) 106  
Drift TA/800µA 106  
Drift TA RRTD MIN/(VIN MAX) 106  
Drift TA  
1.5µV/°C 20°C/(800µA 0.38/°C 200°C) 106  
20pA/°C 20°C/800µA 106  
5pA/°C 20°C 100W/(800µA 0.38/°C 200°C) 106  
35ppm/°C 20°C  
493  
0.5  
493  
0.5  
0.2  
0.2  
700  
395  
500  
626  
2715  
700  
395  
500  
626  
2715  
Current Reference Matching Drift TA 800µA RRTD MIN/(VIN MAX  
)
15ppm/°C 20°C 800µA 100/(800µA 0.38/°C 200°C)  
25ppm/°C 20°C  
Span  
Drift TA  
Drift TA/16000µA 106  
Zero Output  
0.5µA/°C 20°C/16000µA 106  
Total Drift Error:  
NOISE (0.1Hz to 10Hz, typ)  
Input Offset Voltage  
Current Reference  
Zero Output  
vn/(VIN MAX) 106  
0.6µV/(800µA 0.38/°C 200°C) 106  
3nA 100/(800µA 0.38/°C 200°C) 106  
0.03µA/16000µA 106  
10  
5
2
10  
5
2
I
REF Noise RRTD MIN/(VIN MAX) 106  
I
ZERO Noise/16000µA 106  
Total Noise Error:  
17  
17  
TOTAL ERROR:  
11728  
3168  
NOTE (1): All errors are min/max and referred to input unless otherwise stated.  
(1.17%)  
(0.32%)  
TABLE II. Error Calculation.  
XTR105  
SBOS061B  
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REVERSE-VOLTAGE PROTECTION  
Most surge protection zener diodes have a diode character-  
istic in the forward direction that will conduct excessive  
current, possibly damaging receiving-side circuitry if the loop  
connections are reversed. If a surge protection diode is used,  
a series diode or diode bridge should be used for protection  
against reversed connections.  
The XTR105s low compliance rating (7.5V) permits the use  
of various voltage protection methods without compromising  
operating range. Figure 4 shows a diode bridge circuit that  
allows normal operation even when the voltage connection  
lines are reversed. The bridge causes a two diode drop  
(approximately 1.4V) loss in loop-supply voltage. This results  
in a compliance voltage of approximately 9Vsatisfactory  
for most applications. If a 1.4V drop in loop supply is too  
much, a diode can be inserted in series with the loop-supply  
voltage and the V+ pin. This protects against reverse output  
connection lines with only a 0.7V loss in loop-supply voltage.  
RADIO FREQUENCY INTERFERENCE  
The long wire lengths of current loops invite radio frequency  
(RF) interference. RF can be rectified by the sensitive input  
circuitry of the XTR105 causing errors. This generally ap-  
pears as an unstable output current that varies with the  
position of loop supply or input wiring.  
SURGE PROTECTION  
If the RTD sensor is remotely located, the interference may  
enter at the input terminals. For integrated transmitter as-  
semblies with short connections to the sensor, the interfer-  
ence more likely comes from the current loop connections.  
Remote connections to current transmitters can sometimes be  
subjected to voltage surges. It is prudent to limit the maximum  
surge voltage applied to the XTR105 to as low as practical.  
Various zener diodes and surge clamping diodes are specially  
designed for this purpose. Select a clamp diode with as low a  
voltage rating as possible for best protection. For example, a  
36V protection diode will assure proper transmitter operation  
at normal loop voltages, yet will provide an appropriate level  
of protection against voltage surges. Characterization tests on  
three production lots showed no damage to the XTR105 within  
loop-supply voltages up to 65V.  
Bypass capacitors on the input reduce or eliminate this input  
interference. Connect these bypass capacitors to the IRET  
terminal (see Figure 5). Although the dc voltage at the IRET  
terminal is not equal to 0V (at the loop supply, VPS), this  
circuit point can be considered the transmitters ground.”  
The 0.01µF capacitor connected between V+ and IO may  
help minimize output interference.  
NOTE: (1) Zener Diode 36V: 1N4753A or General  
Semiconductor TransorbTM 1N6286A. Use lower  
voltage zener diodes with loop-power supply  
voltages less than 30V for increased protection.  
See the Surge Protection section.  
10  
V+  
0.01µF  
1N4148  
Diodes  
(1)  
B
E
D1  
XTR105  
9
8
Maximum VPS must be  
less than minimum  
voltage rating of zener  
diode.  
RL  
VPS  
IO  
The diode bridge causes  
a 1.4V loss in loop-supply  
voltage.  
7
IRET  
6
FIGURE 4. Reverse Voltage Operation and Over-Voltage Surge Protection.  
XTR105  
12  
SBOS061B  
www.ti.com  
12  
1
VLIN  
1kΩ  
14  
IR2  
13  
IR1  
11  
VREG  
VI+N  
10  
V+  
4
RG  
RLIN1  
RLIN2  
9
8
RG  
B
E
0.01µF  
XTR105  
3
2
RG  
VIN  
IO  
1kΩ  
7
IRET  
RZ  
6
0.01µF  
0.01µF  
RTD  
(1)  
RCM  
NOTE: (1) Bypass capacitors can be connected  
to either the IRET pin or the IO pin.  
0.01µF  
FIGURE 5. Input Bypassing Technique with Linearization.  
I
REG < 1mA  
5V  
14  
12  
1
V+  
VLIN  
IR1  
1/2  
13  
4
11  
VREG  
VI+N  
IR2  
10  
V+  
OPA2335  
Type J  
RF  
10kΩ  
RG  
RG  
1250Ω  
9
8
B
E
R
412Ω  
XTR105  
RF  
10kΩ  
3
2
RG  
VIN  
IO  
1/2  
OPA2335  
7
1kΩ  
25Ω  
IRET  
IO = 4mA + (VI+N VIN  
)
40  
RG  
V–  
6
50Ω  
RCM = 1250Ω  
2RF  
R
(G = 1 +  
= 50)  
FIGURE 6. Thermocouple Low Offset, Low Drift Loop Measurement with Diode Cold Junction Compensation.  
XTR105  
SBOS061B  
13  
www.ti.com  
12  
1
1N4148  
VLIN  
14  
13  
IR1  
+12V  
11  
VI+N  
IR2  
10  
V+  
VREG  
1µF  
4
RG  
B
E
9
8
RLIN1  
5760Ω  
RG  
402Ω  
Q1  
0.01µF  
16  
10  
XTR105  
11  
3
2
12  
3
RG  
VIN  
VO = 0 to 5V  
15  
14  
IO  
RCV420  
2
7
13  
IRET  
Pt100  
100°C to  
600°C  
5
4
RTD  
IO = 4mA 20mA  
RZ  
137Ω  
6
1µF  
12V  
RCM = 1kΩ  
0.01µF  
NOTE: A 2-wire RTD connection is shown. For remotely  
located RTDs, a 3-wire RTD conection is recommended.  
RG becomes 383, RLIN2 is 8060. See Figure 3 and  
Table I.  
FIGURE 7. ±12V Powered Transmitter/Receiver Loop.  
12  
RLIN1  
RLIN2  
1
1N4148  
VLIN  
14  
13  
IR1  
11  
VI+N  
IR2  
+15V  
10  
V+  
VREG  
1µF  
1µF  
Isolated Power  
from PWS740  
0
4
RG  
15V  
9
8
B
E
Q1  
0.01µF  
16  
RG  
XTR105  
10  
11  
3
2
12  
3
2
RG  
VIN  
V+  
1
15  
14  
RCV420  
IO  
9
15  
7
8
13  
7
RZ  
ISO122  
VO  
IRET  
5
4
0 5V  
10  
IO = 4mA 20mA  
6
2
16  
RTD  
V–  
NOTE: A 3-wire RTD connection is shown.  
For a 2-wire RTD connection eliminate RLIN2  
.
RCM = 1kΩ  
0.01µF  
FIGURE 8. Isolated Transmitter/Receiver Loop.  
XTR105  
14  
SBOS061B  
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1.6mA  
12  
1
VLIN  
14  
IR2  
IR1  
11  
VI+N  
13  
4
10  
VREG  
V+  
RG  
9
8
B
E
RG  
XTR105  
3
2
RG  
VIN  
7
IRET  
6
RCM = 1k(1)  
NOTE: (1) Use RCM to adjust the  
common-mode voltage to within  
1.25V to 3.5V.  
FIGURE 9. Bridge Input, Current Excitation.  
XTR105  
SBOS061B  
15  
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PACKAGE OPTION ADDENDUM  
www.ti.com  
16-Feb-2009  
PACKAGING INFORMATION  
Orderable Device  
XTR105P  
Status (1)  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
ACTIVE  
Package Package  
Pins Package Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)  
Qty  
Type  
Drawing  
PDIP  
N
14  
14  
14  
14  
14  
14  
14  
14  
14  
14  
25 Green (RoHS & CU NIPDAU N / A for Pkg Type  
no Sb/Br)  
XTR105PA  
PDIP  
PDIP  
PDIP  
SOIC  
SOIC  
SOIC  
SOIC  
SOIC  
SOIC  
N
N
N
D
D
D
D
D
D
25 Green (RoHS & CU NIPDAU N / A for Pkg Type  
no Sb/Br)  
XTR105PAG4  
XTR105PG4  
XTR105U  
25 Green (RoHS & CU NIPDAU N / A for Pkg Type  
no Sb/Br)  
25 Green (RoHS & CU NIPDAU N / A for Pkg Type  
no Sb/Br)  
50 Green (RoHS & CU NIPDAU Level-3-260C-168 HR  
no Sb/Br)  
XTR105UA  
50 Green (RoHS & CU NIPDAU Level-3-260C-168 HR  
no Sb/Br)  
XTR105UA/2K5  
XTR105UA/2K5E4  
XTR105UAG4  
XTR105UG4  
2500 Green (RoHS & CU NIPDAU Level-3-260C-168 HR  
no Sb/Br)  
2500 Green (RoHS & CU NIPDAU Level-3-260C-168 HR  
no Sb/Br)  
50 Green (RoHS & CU NIPDAU Level-3-260C-168 HR  
no Sb/Br)  
50 Green (RoHS & CU NIPDAU Level-3-260C-168 HR  
no Sb/Br)  
(1) The marketing status values are defined as follows:  
ACTIVE: Product device recommended for new designs.  
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.  
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in  
a new design.  
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.  
OBSOLETE: TI has discontinued the production of the device.  
(2)  
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check  
http://www.ti.com/productcontent for the latest availability information and additional product content details.  
TBD: The Pb-Free/Green conversion plan has not been defined.  
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements  
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered  
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.  
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and  
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS  
compatible) as defined above.  
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame  
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)  
(3)  
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder  
temperature.  
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Addendum-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
23-May-2008  
TAPE AND REEL INFORMATION  
*All dimensions are nominal  
Device  
Package Package Pins  
Type Drawing  
SPQ  
Reel  
Reel  
A0 (mm)  
B0 (mm)  
K0 (mm)  
P1  
W
Pin1  
Diameter Width  
(mm) W1 (mm)  
(mm) (mm) Quadrant  
XTR105UA/2K5  
SOIC  
D
14  
2500  
330.0  
16.4  
6.5  
9.0  
2.1  
8.0  
16.0  
Q1  
Pack Materials-Page 1  
PACKAGE MATERIALS INFORMATION  
www.ti.com  
23-May-2008  
*All dimensions are nominal  
Device  
Package Type Package Drawing Pins  
SOIC 14  
SPQ  
Length (mm) Width (mm) Height (mm)  
346.0 346.0 33.0  
XTR105UA/2K5  
D
2500  
Pack Materials-Page 2  
IMPORTANT NOTICE  
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Copyright © 2011, Texas Instruments Incorporated  
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