4N50
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS
IDSS
ID=250µA, VGS=0V
500
2.0
V
VDS=500V, VGS=0V
VGS=+30V, VDS=0V
1
µA
Forward
Reverse
+100 nA
-100 nA
Gate- Source Leakage Current
IGSS
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
RDS(ON)
VDS=VGS, ID=250µA
VGS=10V, ID=2A
4.0
V
Static Drain-Source On-State Resistance
DYNAMIC PARAMETERS
Input Capacitance
1.65 2.0
ꢀ
CISS
COSS
CRSS
485 650 pF
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
65
5
90
8
pF
pF
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge
QG
QGS
QGD
tD(ON)
tR
11
3
15
nC
nC
nC
ns
ns
ns
ns
VGS=10V, VDS=400V, ID=4A
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
(Note 4, 5)
5
14
21
27
20
38
52
64
50
VDD=250V, ID=4A, RG=25ꢀ
(Note 4, 5)
Turn-OFF Delay Time
Fall-Time
tD(OFF)
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
Maximum Body-Diode Pulsed Current
Drain-Source Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
IS
4
A
A
ISM
16
1.6
VSD
tRR
IS=4A, VGS=0V
V
IS=4A, VGS=0V, dIF/dt=100A/µs
(Note 4)
36
33
ns
µC
QRR
Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 27mH, IAS = 4A, VDD = 50V, RG = 25ꢀ, Starting TJ = 25°C
3. ISD ≤ 4A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
3 of 6
QW-R502-525.a
www.unisonic.com.tw
