IXFR 100N25
Symbol
gfs
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
ISOPLUS247OUTLINE
VDS = 10 V; ID = IT
Notes 2, 3
40
70
S
Ciss
Coss
Crss
9100
1800
600
pF
pF
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
td(on)
tr
td(off)
tf
42
55
ns
ns
ns
ns
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
RG = 1 Ω (External), Notes 2, 3
110
40
Qg(on)
Qgs
300
57
nC
nC
VGS = 10 V, VDS = 0.5 VDSS, ID = IT
Notes 2, 3
Qgd
160
nC
0.3 K/W
K/W
RthJC
RthCK
0.15
Source-DrainDiode
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
Symbol
TestConditions
IS
VGS = 0 V
100
400
1.5
A
A
V
ISM
VSD
Repetitive; Note 1
IF = IT, VGS = 0 V, Notes 2, 3
trr
250
ns
µC
A
QRM
IRM
1.4
10
IF = 50A,-di/dt = 100 A/µs, VR = 100 V
Note: 1. Pulse width limited by TJM
2. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
3. IT = 50
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106
4,850,072 4,931,844
5,017,508
5,034,796
5,049,961 5,187,117 5,486,715
5,063,307 5,237,481 5,381,025
