找货询价

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

QQ咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

技术支持

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

售后咨询

一对一服务 找料无忧

专属客服

服务时间

周一 - 周六 9:00-18:00

IXST40N60B

型号:

IXST40N60B

描述:

高速IGBT[ High Speed IGBT ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

58 K

IXSH 40N60B VCES  
IXST 40N60B IC25  
= 600V  
High Speed IGBT  
=
=
75A  
2.2V  
VCE(sat)  
Short Circuit SOA Capability  
tfi typ  
= 100 ns  
Preliminary data  
TO-247AD(IXSH)  
Symbol  
TestConditions  
MaximumRatings  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
(TAB)  
TJ = 25°C to 150°C; RGE = 1 MW  
G
C
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
E
TO-268 (D3) ( IXST)  
IC25  
IC90  
ICM  
TC = 25°C  
75  
40  
A
A
A
TC = 90°C  
G
(TAB)  
TC = 25°C, 1 ms  
150  
E
SSOA  
(RBSOA)  
VGE= 15 V, TJ = 125°C, RG = 2.7 W  
Clamped inductive load, VCC= 0.8 VCES  
ICM = 80  
@ 0.8 VCES  
A
G = Gate  
E = Emitter  
TAB = Collector  
tSC  
(SCSOA)  
VGE= 15 V, VCE = 360 V, TJ = 125°C  
RG = 22 W, non repetitive  
10  
ms  
W
PC  
TC = 25°C  
280  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
Features  
TJM  
Tstg  
• Internationalstandardpackages  
• Guaranteed Short Circuit SOA  
capability  
-55 ... +150  
Md  
Mountingtorque  
1.13/10 Nm/lb.in.  
• Low VCE(sat)  
Weight  
6
g
- for low on-state conduction losses  
• Highcurrenthandlingcapability  
• MOS Gate turn-on  
Maximumleadtemperatureforsoldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
- drivesimplicity  
• Fast Fall Time for switching speeds  
up to 50 kHz  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Applications  
• AC and DC motor speed control  
• Uninterruptiblepowersupplies(UPS)  
• Welding  
BVCES  
VGE(th)  
IC = 250 mA, VGE = 0 V  
600  
4
V
V
IC = 4 mA, VCE = VGE  
7
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
25 mA  
mA  
1
Advantages  
IGES  
VCE = 0 V, VGE = ±20 V  
±100 nA  
2.2  
• Easy to mount with 1 screw (TO-247)  
(isolatedmountingscrewhole)  
• High power density  
VCE(sat)  
IC = IC90, VGE = 15 V  
V
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
98521B(7/00)  
1 - 2  
IXSH 40N60B  
IXST 40N60B  
Symbol  
gfs  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-247 AD (IXSH) Outline  
IC = IC90; VCE = 10 V,  
16  
23  
S
Pulse test, t £ 300 ms, duty cycle £ 2 %  
Cies  
Coes  
Cres  
3700  
280  
80  
pF  
pF  
pF  
VCE = 25 V, VGE = 0 V, f = 1 MHz  
IC = IC90, VGE = 15 V, VCE = 0.5 VCES  
Inductive load, TJ = 25°C  
Qg  
190  
45  
nC  
nC  
nC  
Qge  
Qgc  
90  
td(on)  
tri  
td(off)  
tfi  
50  
50  
ns  
ns  
Dim. Millimeter  
Inches  
Min. Max. Min. Max.  
110  
120  
1.8  
200 ns  
200 ns  
2.6 mJ  
IC = IC90, VGE = 15 V, L = 100 µH  
VCE = 0.8 VCES, RG = 2.7 W  
A
B
19.81 20.32 0.780 0.800  
20.80 21.46 0.819 0.845  
C
D
15.75 16.26 0.610 0.640  
3.55 3.65 0.140 0.144  
Eoff  
E
F
4.32 5.49 0.170 0.216  
5.4  
6.2 0.212 0.244  
td(on)  
tri  
55  
170  
1.7  
ns  
ns  
G
H
1.65 2.13 0.065 0.084  
Inductive load, TJ = 125°C  
-
4.5  
-
0.177  
Eon  
td(off)  
tfi  
mJ  
ns  
J
K
1.0  
1.4 0.040 0.055  
IC = IC90, VGE = 15 V,  
10.8 11.0 0.426 0.433  
190  
180  
2.0  
VCE = 0.8 VCES, RG = 2.7 W  
L
M
4.7  
0.4  
5.3 0.185 0.209  
0.8 0.016 0.031  
ns  
Eoff  
mJ  
N
1.5 2.49 0.087 0.102  
RthJC  
RthCK  
0.45 K/W  
K/W  
TO-268AA (D3 PAK)  
(IXSH40N60B)  
0.25  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min. Max.  
Min. Recommended Footprint  
A
A1  
A2  
4.9  
2.7  
.02  
5.1  
2.9  
.25  
.193 .201  
.106 .114  
.001 .010  
b
b2  
C
1.15  
1.9  
.4  
1.45  
2.1  
.65  
.045 .057  
.75  
.83  
.016 .026  
D
E
E1  
13.80 14.00  
15.85 16.05  
.543 .551  
.624 .632  
.524 .535  
13.3  
5.45 BSC  
18.70 19.10  
13.6  
e
H
L
.215 BSC  
.736 .752  
.094 .106  
2.40  
2.70  
L1  
L2  
L3  
L4  
1.20  
1.00  
0.25 BSC  
1.40  
1.15  
.047 .055  
.039 .045  
.010 BSC  
3.80  
4.10  
.150 .161  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:  
© 2000 IXYS All rights reserved  
2 - 2  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715  
5,381,025  
厂商 型号 描述 页数 下载

LITTELFUSE

IXS839AD2 [ Half Bridge Based MOSFET Driver, DIE-12 ] 13 页

LITTELFUSE

IXS839AQ2 [ Half Bridge Based MOSFET Driver, MO-229VEED-5, QFN-10 ] 13 页

LITTELFUSE

IXS839AQ2T/R [ Half Bridge Based MOSFET Driver, MO-229VEED-5, QFN-10 ] 13 页

LITTELFUSE

IXS839BD2 [ Half Bridge Based MOSFET Driver, DIE-12 ] 13 页

LITTELFUSE

IXS839BQ2 [ Half Bridge Based MOSFET Driver, MO-229VEED-5, QFN-10 ] 13 页

LITTELFUSE

IXS839BQ2T/R [ Half Bridge Based MOSFET Driver, MO-229VEED-5, QFN-10 ] 13 页

LITTELFUSE

IXS839D1 [ Half Bridge Based MOSFET Driver, DIE-12 ] 13 页

LITTELFUSE

IXS839S1 [ Half Bridge Based MOSFET Driver, PDSO8, MS-012AA, SOIC-8 ] 13 页

LITTELFUSE

IXS839S1T/R [ Half Bridge Based MOSFET Driver, PDSO8, MS-012AA, SOIC-8 ] 13 页

IXYS

IXSA10N60B2D1 高速IGBT与二极管[ High Speed IGBT with Diode ] 6 页

PDF索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

IC型号索引:

A

B

C

D

E

F

G

H

I

J

K

L

M

N

O

P

Q

R

S

T

U

V

W

X

Y

Z

0

1

2

3

4

5

6

7

8

9

Copyright 2024 gkzhan.com Al Rights Reserved 京ICP备06008810号-21 京

0.172189s