HiPerFETTM
Power MOSFETs
Q-CLASS
VDSS = 800 V
ID25 = 27 A
RDS(on) = 300 mW
IXFK 27N80Q
IXFR 27N80Q
IXFX 27N80Q
Single MOSFET Die
trr £ 250 ns
PLUS 247TM (IXFX)
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dV/dt, Low trr
(TAB)
G
D
Symbol
TestConditions
MaximumRatings
TO-264 AA (IXFK)
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MW
800
800
V
V
G
D
VGS
VGSM
Continuous
Transient
±20
±30
V
V
(TAB)
S
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
27
108
27
A
A
A
ISOPLUS 247TM (IXFR)
E153432
EAR
EAS
TC = 25°C
TC = 25°C
60
2.5
mJ
J
G
D
dv/dt
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS
TJ £ 150°C, RG = 2 W
5
V/ns
Isolated back surface*
G = Gate
S = Source
D = Drain
TAB = Drain
PD
TC = 25°C
500
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
Features
• IXYS advanced low Qg process
• Low gate charge and capacitances
- easier to drive
- faster switching
• Internationalstandardpackages
• Low RDS (on)
TL
1.6 mm (0.063 in.) from case for 10 s
300
°C
Md
Mountingtorque
TO-264
0.4/6
Nm/lb.in.
Weight
PLUS 247/ISOPLUS 247
TO-264
6
10
g
g
• Rated for unclamped Inductive load
switching (UIS) rated
• Molding epoxies meet UL 94 V-0
flammabilityclassification
Symbol
VDSS
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
Applications
• DC-DC converters
• Batterychargers
• Switched-modeandresonant-mode
powersupplies
• DC choppers
min. typ. max.
VGS = 0 V, ID = 250uA
800
2.0
V
VGS(th)
IGSS
VDS = VGS, ID = 4mA
4.5 V
• ACmotorcontrol
• Temperatureandlightingcontrols
VGS = ±20 V, VDS = 0
±100nA
IDSS
VDS = VDSS
VGS = 0 V
100 mA
2 mA
Advantages
TJ = 125°C
• PLUS 247TM package for clip or spring
mounting
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Note 1
300 mW
• Space savings
• Highpowerdensity
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98722(05/22/00)
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