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IXFN100N120

型号：

IXFN100N120

品牌：

IXYS[ IXYS CORPORATION ]

页数：

4 页

PDF大小：

112 K

下载PDF手册
HiPerFETTM  
Power MOSFETs  
VDSS  
ID25  
RDS(on)  
IXFK 90 N 20 200V  
90 A  
23 mW  
IXFN 100 N 20 200V 100 A 23 mW  
IXFN 106 N 20 200V 106 A 20 mW  
trr £ 200 ns  
N-Channel Enhancement Mode  
Avalanche Rated, High dv/dt, Low trr  
TO-264 AA  
(IX
Symbol  
TestConditions  
MaximumRatings  
IXFK  
IXFN  
IXFN  
90N20 100N20 106N20  
VDSS  
VDGR  
TJ = 25°C to 150°C  
200  
200  
200 V  
(TAB)  
G
TJ = 25°C to 150°C; RGS = 1 MW  
200  
200  
200 V  
D
S
VGS  
Continuous  
Transient  
±20  
±30  
±20  
±30  
20 V  
20 V  
miniBLOC, SOT-227 B (IXFN)  
VGSM  
E153432  
S
ID25  
ID80  
IDM  
IAR  
TC = 25°C, Chip capability  
TC = 80°C, limited by external leads  
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
90   
76  
100  
-
106 A  
A
G
D
360  
50  
400  
50  
424 A  
A
G
S
EAR  
TC = 25°C  
30  
5
30  
5
30 mJ  
5 V/ns  
S
D
S
dv/dt  
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS  
TJ £ 150°C, RG = 2 W  
,
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
PD  
TC = 25°C  
500  
520  
W
Either Source terminal at miniBLOC can be used  
as Main or Kelvin Source  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
Features  
-55 ... +150  
l
Internationalstandardpackages  
JEDECTO-264 AA,epoxymeet  
●
TL  
1.6 mm (0.063 in) from case for 10 s  
300  
-
°C  
UL94V-0,flammabilityclassification  
miniBLOCwithAluminiumnitride  
VISOL  
50/60 Hz, RMS  
IISOL £ 1 mA  
t = 1 min  
t = 1 s  
-
-
2500  
3000  
V~  
V~  
●
isolation  
Low RDS (on) HDMOSTM process  
●
Md  
Mountingtorque  
Terminalconnectiontorque  
0.9/6  
-
1.5/13 Nm/lb.in.  
1.5/13 Nm/lb.in.  
●
Rugged polysilicon gate cell structure  
Unclamped Inductive Switching (UIS)  
rated  
Low package inductance  
Fast intrinsic Rectifier  
●
Weight  
10  
30  
g
●
●
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
Applications  
●
DC-DC converters  
Synchronousrectification  
Battery chargers  
min. typ. max.  
●
●
VDSS  
VGS = 0 V, ID = 1 mA  
VDS = VGS, ID = 8 mA  
200  
2
V
V
●
Switched-modeandresonant-mode  
VGH(th)  
4
powersupplies  
DC choppers  
Temperatureandlightingcontrols  
Low voltage relays  
IGSS  
IDSS  
VGS = ±20 VDC, VDS = 0  
±200 nA  
400 mA  
●
●
VDS = 0.8 • VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
●
2
mA  
RDS(on)  
VGS = 10 V, ID = 0.5 • ID25  
Pulse test, t £ 300 ms,  
duty cycle d £ 2 %  
Advantages  
IXFK90N20  
IXFN100N20  
IXFN106N20  
0.023  
0.023  
0.020  
W
W
W
●
Easy to mount  
Space savings  
●
●
High power density  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
92804H(7/97)  
1 - 4  
IXFK100N20  
IXFN90N20 IXFN106N20  
Symbol  
gfs  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
TO-264 AA Outline  
VDS = 10 V; ID = 0.5 • ID25, pulse test  
60  
S
Ciss  
Coss  
Crss  
9000  
1600  
590  
pF  
pF  
pF  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
td(on)  
tr  
td(off)  
tf  
30  
80  
75  
30  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
RG = 1 W (External),  
Dim.  
Millimeter  
Inches  
Min.  
Max.  
Min.  
Max.  
A
A1  
A2  
4.82  
2.54  
2.00  
5.13  
2.89  
2.10  
.190  
.100  
.079  
.202  
.114  
.083  
Qg(on)  
Qgs  
380  
70  
nC  
nC  
nC  
b
b1  
b2  
c
D
1.12  
2.39  
2.90  
1.42  
2.69  
3.09  
.044  
.094  
.114  
.056  
.106  
.122  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
Qgd  
190  
0.53  
0.83  
.021  
1.020  
.780  
.033  
1.030  
.786  
25.91 26.16  
E
e
J
19.81 19.96  
5.46 BSC  
RthJC  
RthCK  
TO-264 AA  
TO-264 AA  
0.25 K/W  
K/W  
.215 BSC  
0.00  
0.00  
0.25  
0.25  
.000  
.000  
.010  
.010  
0.15  
0.05  
K
L
L1  
P
Q
20.32 20.83  
.800  
.090  
.820  
.102  
RthJC  
RthCK  
miniBLOC, SOT-227 B  
miniBLOC, SOT-227 B  
0.24 K/W  
K/W  
2.29  
2.59  
3.17  
3.66  
.125  
.144  
6.07  
8.38  
6.27  
8.69  
.239  
.330  
.247  
.342  
Q1  
R
R1  
3.81  
1.78  
4.32  
2.29  
.150  
.070  
.170  
.090  
Source-DrainDiode  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
S
T
6.04  
1.57  
6.30  
1.83  
.238  
.062  
.248  
.072  
Symbol  
IS  
TestConditions  
VGS = 0 V  
IXFK90N20  
IXFN100N20  
IXFN106N20  
90  
100  
106  
A
A
A
miniBLOC, SOT-227 B  
IXFK90N20  
IXFN100N20  
IXFN106N20  
ISM  
Repetitive;  
pulse width limited by TJM  
360  
424  
A
A
VSD  
IF = 100 A, VGS = 0 V,  
1.5  
V
Pulse test, t £ 300 ms, duty cycle d £ 2 %  
trr  
200 ns  
QRM  
IRM  
IF = 50 A, -di/dt = 100 A/ms, VR = 100 V  
3
38  
mC  
A
M4 screws (4x) supplied  
Dim.  
Millimeter  
Min. Max.  
31.50 31.88 1.240 1.255  
Inches  
Min.  
Max.  
A
B
7.80  
8.20 0.307 0.323  
C
D
4.09  
4.09  
4.29 0.161 0.169  
4.29 0.161 0.169  
E
F
4.09  
4.29 0.161 0.169  
14.91 15.11 0.587 0.595  
G
H
30.12 30.30 1.186 1.193  
38.00 38.23 1.496 1.505  
J
11.68 12.22 0.460 0.481  
K
8.92  
9.60 0.351 0.378  
L
0.76  
0.84 0.030 0.033  
M
12.60 12.85 0.496 0.506  
25.15 25.42 0.990 1.001  
N
O
1.98  
2.13 0.078 0.084  
P
4.95  
5.97 0.195 0.235  
Q
26.54 26.90 1.045 1.059  
R
S
3.94  
4.72  
4.42 0.155 0.174  
4.85 0.186 0.191  
T
U
24.59 25.07 0.968 0.987  
-0.05 0.1 -0.002 0.004  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:  
© 2000 IXYS All rights reserved  
2 - 4  
4,835,592  
4,850,072  
4,881,106  
4,931,844  
5,017,508  
5,034,796  
5,049,961  
5,063,307  
5,187,117  
5,237,481  
5,486,715  
5,381,025  
IXFK100N20  
IXFN90N20 IXFN106N20  
Fig. 1 Output Characteristics  
Fig. 2 Input Admittance  
200  
180  
160  
140  
120  
100  
80  
200  
180  
160  
140  
120  
100  
80  
9V  
8V  
7V  
VGS = 10V  
TJ = 25°C  
TJ = 25°C  
6V  
5V  
60  
60  
40  
40  
20  
20  
0
0
0
1
2
3
4
5
6
7
8
9
10  
0
1
2
3
4
5
6
7
8
9
10  
VDS - Volts  
VGS - Volts  
Fig. 3 RDS(on) vs. Drain Current  
Fig. 4 Temperature Dependence  
of Drain to Source Resistance  
2.6  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
2.50  
2.25  
2.00  
1.75  
1.50  
1.25  
1.00  
0.75  
0.50  
TJ = 25°C  
ID = 53A  
VGS = 10V  
VGS = 15V  
0
50  
100 150 200 250 300 350  
ID - Amperes  
-50 -25  
0
25 50 75 100 125 150  
TJ - Degrees C  
Fig. 5 Drain Current vs.  
Case Temperature  
Fig. 6 Temperature Dependence of  
Breakdown and Threshold Voltage  
120  
100  
80  
60  
40  
20  
0
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
VGS(th)  
106N20  
BVDSS  
90N20  
-50 -25  
0
25 50 75 100 125 150  
TC - Degrees C  
-50 -25  
0
25 50 75 100 125 150  
TJ - Degrees C  
© 2000 IXYS All rights reserved  
3 - 4  
IXFK100N20  
IXFN90N20 IXFN106N20  
Fig.7 Gate Charge Characteristic Curve  
Fig.8 Capacitance Curves  
9000  
8000  
7000  
6000  
5000  
4000  
3000  
2000  
1000  
0
Ciss  
14  
12  
10  
8
VDS = 100V  
ID = 50A  
IG = 10mA  
f = 1MHz  
VDS = 25V  
6
Coss  
Crss  
4
2
0
0
50 100 150 200 250 300 350 400  
Gate Charge - nCoulombs  
0
5
10  
15  
20  
25  
VDS - Volts  
Fig.9 Source Current vs. Source  
to Drain Voltage  
100  
80  
60  
40  
20  
0
TJ = 125°C  
TJ = 25°C  
0.4  
0.6  
0.8  
1.0  
1.2  
VSD - Volts  
Fig.10 Transient Thermal Impedance  
0.5  
0.1  
0.01  
0.001  
0.01  
0.1  
1
Pulse Width - Seconds  
© 2000 IXYS All rights reserved  
4 - 4  
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