HiPerRFTM
Power MOSFETs
F-Class: MegaHertz Switching
IXFX 21N100F
IXFK21N100F
VDSS = 1000 V
ID25 = 21 A
RDS(on) = 0.50 Ω
t ≤ 250 ns
Single MOSFET Die
rr
N-ChannelEnhancementMode
Avalanche Rated, Low Qg, Low Intrinsic Rg
High dV/dt, Low trr
PLUS247TM (IXFX)
Symbol
TestConditions
Maximum Ratings
VDSS
VDGR
T
T
= 25°C to 150°C
= 25°C to 150°C; R = 1 MΩ
1000
1000
V
V
J
J
(TAB)
G
GS
D
VGS
VGSM
Continuous
Transient
±20
±30
V
V
TO-264AA(IXFK)
ID25
IDM
IAR
T
= 25°C
21
84
21
A
A
A
C
T
= 25°C, pulse width limited by T
= 25°C
C
JM
T
C
G
D
(TAB)
EAR
EAS
T
= 25°C
= 25°C
60
2.5
mJ
J
S
C
T
C
G = Gate
S = Source
D = Drain
TAB = Drain
dv/dt
I
T
≤ I , di/dt ≤ 100 A/µs, V ≤ V
10
V/ns
S
DM
DD
DSS
≤ 150°C, R = 2 Ω
J
G
PD
TJ
T
= 25°C
500
W
Features
C
l
RF capable MOSFETs
-55 ... +150
°C
l
l
l
l
Double metal process for low gate
resistance
TJM
Tstg
150
-55 ... +150
°C
°C
Unclamped Inductive Switching (UIS)
rated
TL
1.6 mm (0.063 in.) from case for 10 s
300
°C
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
Md
Mounting torque
TO-264
0.4/6 Nm/lb.in.
Weight
PLUS 247
TO-264
5
10
g
g
Applications
l
DC-DC converters
l
Switched-mode and resonant-mode
power supplies, >500kHz switching
Symbol
VDSS
TestConditions
Characteristic Values
(T = 25°C, unless otherwise specified)
J
l
DC choppers
min. typ. max.
l
13.5 MHz industrial applications
VGS = 0 V, ID = 1mA
VDS = VGS, ID = 4mA
1000
3.0
V
l
Pulse generation
l
Laser drivers
VGS(th)
IGSS
5.0 V
l
RF amplifiers
V
= ±20 V, V = 0
±100 nA
GS
DS
Advantages
IDSS
V
V
= V
= 0 V
T = 25°C
100 µA
2 mA
l
DS
DSS
J
TM
PLUS 247 package for clip or spring
T = 125°C
GS
J
mounting
l
l
RDS(on)
V
Note 1
= 10 V, I = 0.5 I
0.50
Ω
GS
D
D25
Space savings
High power density
98880 (01/02)
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