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IXFX55N50

型号:

IXFX55N50

描述:

HiPerRF功率MOSFET[ HiPerRF Power MOSFETs ]

品牌:

IXYS[ IXYS CORPORATION ]

页数:

2 页

PDF大小:

108 K

Advance Technical Information  
HiPerRFTM  
IXFN 55N50F  
VDSS = 500 V  
ID25  
RDS(on)  
=
=
55 A  
85 mΩ  
Power MOSFETs  
F-Class: MegaHertz Switching  
D
N-Channel Enhancement Mode  
t 250 ns  
rr  
Avalanche Rated, Low Q Low Intrinsic R  
G
g,  
g
High dV/dt, Low t  
rr  
S
S
Symbol  
TestConditions  
MaximumRatings  
miniBLOC,SOT-227B  
E153432  
VDSS  
VDGR  
T
T
= 25°C to 150°C  
500  
500  
V
V
J
J
S
= 25°C to 150°C; R = 1 MΩ  
GS  
G
VGS  
Continuous  
Transient  
±20  
±3  
V
VGSM  
0
V
S
ID25  
T
= 25°C  
55  
A
C
D
IDM  
IAR  
T
= 25°C, pulse width limited by T  
= 25°C  
220  
55  
A
A
C
JM  
T
C
G = Gate  
S = Source  
D = Drain  
EAR  
T
= 25°C  
60  
3
mJ  
C
EAS  
T
= 25°C  
.0  
J
C
Either Source terminal at miniBLOC can be used  
as Main or Kelvin Source  
dv/dt  
I
I , di/dt 100 A/µs, V V  
,
5
V/ns  
W
S
DM  
DD  
DSS  
T
150°C, R = 2 Ω  
J
G
PD  
T
= 25°C  
600  
C
Features  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
l
RF capable Mosfets  
Ruggedpolysilicongatecellstructure  
TJM  
Tstg  
l
-55 ... +150  
l
Double metal process for low gate  
resistance  
UnclampedInductiveSwitching(UIS)  
rated  
TJ  
1.6 mm (0.63 in) from case for 10 s  
-
°C  
l
VISOL  
50/60 Hz, RMS  
1 mA  
t = 1 min  
t = 1 s  
2500  
3000  
V~  
V~  
I
l
ISOL  
Low package inductance  
- easy to drive and to protect  
Fast intrinsicrectifier  
Md  
Mountingtorque  
Terminalconnectiontorque  
1.5/13Nm/lb.in.  
1.5/13Nm/lb.in.  
l
Weight  
3
0
g
Applications  
l
DC-DC converters  
l
Switched-modeandresonant-mode  
power supplies, >500kHz switching  
Symbol  
TestConditions  
CharacteristicValues  
l
(T = 25°C, unless otherwise specified)  
DC choppers  
J
l
min. typ. max.  
Pulsegeneration  
l
Laserdrivers  
VDSS  
V
V
= 0 V, I = 1 mA  
500  
3.0  
V
V
GS  
DS  
D
VGH(th)  
= V , I = 8 mA  
5.5  
GS  
D
Advantages  
l
Easy to mount  
IGSS  
IDSS  
V
= ±20 V , V = 0  
±200 nA  
GS  
DC  
DS  
l
Space savings  
V
V
= V  
T = 25°C  
100 µA  
3
l
DS  
GS  
DSS  
J
High power density  
= 0 V  
= 10 V, I = 0.5 I  
D25  
T = 125°C  
mA  
J
RDS(on)  
V
GS  
D
Pulse test, t 300 µs, duty cycle d 2 %  
85 mΩ  
© 2001 IXYS All rights reserved  
98854 (8/01)  
IXFN 55N50F  
Symbol  
gfs  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
miniBLOC, SOT-227 B  
min.  
typ. max.  
VDS = 10 V; ID = 0.5 • ID25, pulse test  
VGS = 0 V, VDS = 25 V, f = 1 MHz  
22  
33  
S
Ciss  
Coss  
Crss  
6700  
1250  
330  
pF  
pF  
pF  
td(on)  
tr  
td(off)  
tf  
24  
20  
ns  
ns  
ns  
ns  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
M4 screws (4x) supplied  
RG = 1 (External),  
45  
Dim.  
Millimeter  
Inches  
Min.  
Min.  
Max.  
Max.  
9.6  
A
B
31.50  
7.80  
31.88  
8.20  
1.240  
0.307  
1.255  
0.323  
Qg(on)  
Qgs  
195  
50  
nC  
nC  
nC  
C
D
4.09  
4.09  
4.29  
4.29  
0.161  
0.161  
0.169  
0.169  
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25  
E
F
4.09  
4.29  
0.161  
0.587  
0.169  
0.595  
14.91  
15.11  
Qgd  
95  
G30.12  
30.30  
1.186  
1.193  
H
38.00  
38.23  
1.496  
1.505  
RthJC  
RthCK  
0.21 K/W  
K/W  
J
11.68  
8.92  
12.22  
9.60  
0.460  
0.351  
0.481  
0.378  
K
0.05  
L
0.76  
0.84  
0.030  
0.496  
0.033  
0.506  
M
12.60  
12.85  
N
O
25.15  
1.98  
25.42  
2.13  
0.990  
0.078  
1.001  
0.084  
P
4.95  
5.97  
0.195  
1.045  
0.235  
1.059  
Q
26.54  
26.90  
R
S
3.94  
4.72  
4.42  
4.85  
0.155  
0.186  
0.174  
0.191  
T
24.59  
-0.05  
25.07  
0.1  
0.968  
0.987  
0.004  
U
-0.002  
Source-DrainDiode  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Symbol  
IS  
TestConditions  
VGS = 0 V  
55  
220  
1.5  
A
A
V
ISM  
Repetitive;  
pulse width limited by TJM  
VSD  
IF = IS, VGS = 0 V,  
Pulse test, t 300 µs, duty cycle d 2 %  
trr  
IF = 50A, -di/dt = 100 A/µs, VR = 100 V  
250 ns  
QRM  
IRM  
1.6  
13  
µC  
A
IXYS reserves the right to change limits, test conditions, and dimensions.  
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106  
4,850,072 4,931,844  
5,017,508  
5,034,796  
5,049,961 5,187,117 5,486,715  
5,063,307 5,237,481 5,381,025  
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