Advanced Technical Information
HiPerFETTM
PowerMOSFETs
Q-Class
VDSS
ID25
RDS(on)
= 550 V
IXFK 60N55Q2
IXFX 60N55Q2
=
=
60 A
88 mΩ
trr ≤ 250 ns
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Qg
Low intrinsic Rg, low trr
Symbol
TestConditions
Maximum Ratings
PLUS247TM (IXFX)
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
550
550
V
V
VGS
VGSM
Continuous
Transient
±30
±40
V
V
D (TAB)
ID25
IDM
IAR
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
60
240
60
A
A
A
G
D
EAR
EAS
TC = 25°C
TC = 25°C
75
4.0
mJ
J
dv/dt
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS
TJ ≤ 150°C, RG = 2 Ω
,
20
V/ns
TO-264 AA (IXFK)
PD
TC = 25°C
735
W
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
G
D
S
D (TAB)
TL
1.6 mm (0.063 in) from case for 10 s
300
°C
G = Gate
S = Source
D = Drain
TAB = Drain
Md
Mountingtorque
TO-264
0.9/6 Nm/lb.in.
Weight
PLUS-247
TO-264
6
10
g
g
Features
z Double metal process for low gate
resistance
Symbol
TestConditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
z International standard packages
min. typ. max.
z
Epoxy meet UL 94 V-0, flammability
classification
VDSS
VGS = 0 V, ID = 3mA
VDS = VGS, ID = 8 mA
550
2.0
V
V
z Avalanche energy and current rated
z Fast intrinsic Rectifier
VGS(th)
4.5
IGSS
IDSS
VGS = ±20 VDC, VDS = 0
±200 nA
50 µA
Advantages
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
2
mA
z
Easy to mount
Space savings
z
RDS(on)
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
88 mΩ
z
High power density
DS98984(12/02)
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